Patent classifications
G01L1/2293
Semiconductor stress sensor
A piezo-resistor sensor includes a diffusion of a first conductivity type in a well of an opposite second type, contacts with islands in the diffusion, interconnects with the contacts, and a shield covers the diffusion between the contacts and extends over side walls of the diffusion between the contacts. Each interconnect covers the diffusion at the corresponding contact and extends over edges of the diffusion, and each island is at a side covered by its interconnect. A guard ring of the second type is around the diffusion. The shield covers the well between the diffusion and the ring and the edge of the ring facing the diffusion. If a gap between the shield and the interconnect is present, the ring bridges this gap, and/or the edges of the diffusion are completely covered by the combination of the shield and the interconnects.
Electronic device
An electronic device includes: a base substrate including an active region, which includes a sensing region, and a peripheral region adjacent to the active region; an input sensor including a sensing insulating layer, a plurality of first sensing electrodes, a plurality of second sensing electrodes, the second sensing electrodes being spaced apart from the first sensing electrodes; and a pressure sensor including a plurality of strain sensing patterns overlapping the sensing region, and strain connection patterns connecting the strain sensing patterns to each other, wherein each of the first sensing electrodes comprises a plurality of first sensing patterns overlapping the active region, each of the second sensing electrodes comprises a plurality of second sensing patterns overlapping the active region and on a same layer as the first sensing patterns, and a plurality of second connection patterns connecting the second sensing patterns.
Force sensor
A force sensor includes a circuit board, a sensing element, and a first gel. The sensing element is disposed on the circuit board, wherein the sensing element has a top surface and a bottom surface opposite to each other and has a sensing portion. The bottom surface faces the circuit board. The sensing portion is located at the top surface. The first gel is disposed on the top surface and covers the sensing portion, wherein the sensing portion is adapted to generate a sensing signal through an external force transferred from the first gel to the top surface.
Integration of stress decoupling and particle filter on a single wafer or in combination with a waferlevel package
A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a substrate having a first surface and a second surface arranged opposite to the first surface; a stress-sensitive sensor disposed at the first surface of the substrate, where the stress-sensitive sensor is sensitive to mechanical stress; a stress-decoupling trench that has a vertical extension that extends from the first surface into the substrate, where the stress-decoupling trench vertically extends partially into the substrate towards the second surface although not completely to the second surface; and a plurality of particle filter trenches that vertically extend from the second surface into the substrate, wherein each of the plurality of particle filter trenches have a longitudinal extension that extends orthogonal to the vertical extension of the stress-decoupling trench.
High sensitivity silicon piezoresistor force sensor
Methods and systems for sensing a force using a sense die are provided. The sense die may include a slab die; an actuation element configured to contact the slab die and apply a force to the slab die; and one or more sense elements supported by the slab die.
SURFACE STRESS SENSOR AND METHOD FOR MANUFACTURING SAME
A surface stress sensor in which a surface of a membrane includes a receptor forming region that is a region including the center of the surface and an exterior region that is a region located closer to a holding member than the receptor forming region, that includes a forming region-side recess/protrusion pattern that is formed in the receptor forming region and is formed with a pattern in which a plurality of protruding portions or a plurality of recessed portions continue, and in which the forming region-side recess/protrusion pattern is a pattern having a degree of roughness that allows a solution to be present in gaps formed by the plurality of protruding portions or the plurality of recessed portions forming the forming region-side recess/protrusion pattern.
FORCE SENSOR AND METHOD FOR PRODUCING THE SAME
A method for producing a force sensor is a method for producing a force sensor that includes a plate-shaped member (base material) and a strain gauge made of a conductor film, the method including: a first step (see (c)) of forming a conductor layer on one of main surfaces of the plate-shaped member (base material) via a dielectric layer; and a second step (see (d)) of processing the conductor film into the strain gauges by a semiconductor transfer production method.
Load sensor system with improved assembly connection
A load sensor having a centrally disposed aperture element through which a fastening element of a vehicle air suspension assembly passes to affix the load sensor between the vehicle air suspension assembly and the vehicle suspension, wherein the load sensor has a force measurement sensor disposed proximate an elongate slot to generate a load signal which varies based on an amount of strain in the load sensor, wherein the load signal received by a load calculator allows calculation of the load exerted from the vehicle frame to the vehicle suspension.
ELECTRONIC DEVICE
An electronic device includes: a base substrate including an active region, which includes a sensing region, and a peripheral region adjacent to the active region; an input sensor including a sensing insulating layer, a plurality of first sensing electrodes, a plurality of second sensing electrodes, the second sensing electrodes being spaced apart from the first sensing electrodes; and a pressure sensor including a plurality of strain sensing patterns overlapping the sensing region, and strain connection patterns connecting the strain sensing patterns to each other, wherein each of the first sensing electrodes comprises a plurality of first sensing patterns overlapping the active region, each of the second sensing electrodes comprises a plurality of second sensing patterns overlapping the active region and on a same layer as the first sensing patterns, and a plurality of second connection patterns connecting the second sensing patterns.
SENSOR MODULE AND STRAIN DETECTING DEVICE
A sensor module includes a first strain gauge including a first resistor, a second strain gauge including a second resistor, and a flexure element. The first strain gauge has the same characteristic as the second strain gauge. The first strain gauge and the second strain gauge are respectively disposed toward the same surface of the flexure element, via layers each of which has a different linear expansion coefficient.