Patent classifications
G01L1/2293
Tracking temperature compensation of an x/y stress independent resistor
An integrated circuit comprises a semiconductor substrate having a surface. A lateral resistor is arranged in a first plane parallel to the surface of the substrate. A vertical reference resistor comprises a layer arranged in a second plane parallel to the surface of the substrate and deeper than the first plane. This layer is doped to promote current flow in the second plane. The vertical reference resistor further comprises a first trench and a second trench coupled between the layer and the surface of the substrate. The first and second trenches are arranged in a vertical direction orthogonal to the first and the second planes and are doped to impede current flow in the vertical direction. A cross-section of the first and second trenches is two-fold rotationally symmetric around the vertical direction, and the lateral resistor and the first and second trenches have the same temperature coefficient.
Sensor
A sensor for pressure detection which comprises a first substrate (C1) and a second substrate (C2), which are arranged in a planar manner at a distance from each other; a first electrode 5 (A1) arranged on an inner side of the first substrate (C1) and a second electrode (A2) arranged on an inner side of the second substrate (C2); a first force sensitive element (B1) arranged on the inner side of the first substrate and covering at least a part of the first electrode (A1) and a second force sensitive element (B2) arranged on the inner side of the first substrate and covering at least part of the second electrode (A2); and one or more stiffening elements (D1, D2, D3, D4) arranged on at least one of the first substrate (C1) or the second substrate (C2), characterized in that, one or more stiffening elements (D1, D2, D3, D4) define stiffer substrate regions (SR), arranged adjacent to the first force-sensitive element (B1) and the second force-sensitive element (B2).
FORCE SENSOR
A force sensor includes an array substrate having a first surface provided with a plurality of array electrodes, a counter substrate having an opposite surface facing the first surface, a guard electrode disposed on the first surface and extending between the array electrodes, a sensor layer made of a conductive elastomer and placed over the first surface, the array electrodes, and the guard electrode, and a common electrode provided on the opposite surface. The array substrate and the guard electrode are equipotential.
FORCE SENSOR
A force sensor includes a resin substrate, an array substrate, a sensor layer, a common electrode, and a protective film that are sequentially stacked. The array substrate includes a stretchable base material stacked on the resin substrate, and an array layer stacked on the resin substrate with the stretchable base material interposed between the array layer and the resin substrate, and the stretchable base material includes a plurality of first extension parts extending in a first direction parallel to the resin substrate and arranged in a second direction parallel to the resin substrate and intersecting the first direction, a plurality of second extension parts extending in the second direction and arranged in the first direction, and a plurality of body parts provided at parts where the first extension parts intersect the second extension parts.
ELECTRONIC DEVICE INCLUDING FORCE SENSORS DISPOSED ON SAME LAYER AND METHOD FOR CONTROLLING SAME
An electronic device includes a cover window defining a front surface of the electronic device; a first sensor provided under the cover window and configured to detect a pressure applied to the cover window; a second sensor provided on a same layer as the first sensor and configured to detect the pressure applied to the cover window; a first adhesive member provided on at least one area under the second sensor, wherein the second sensor is less deformed than the first sensor by the pressure applied to the cover window provided by the first adhesive member; and a processor configured to: acquire a first pressure change amount detected by the first sensor and a second pressure change amount detected by the second sensor; and detect the pressure applied to the cover window based on the first pressure change amount and the second pressure change amount.
Load Sensor System with Improved Assembly Connection
A load sensor having a centrally disposed aperture element through which a fastening element of a vehicle air suspension assembly passes to affix the load sensor between the vehicle air suspension assembly and the vehicle suspension, wherein the load sensor has a force measurement sensor disposed proximate an elongate slot to generate a load signal which varies based on an amount of strain in the load sensor, wherein the load signal received by a load calculator allows calculation of the load exerted from the vehicle frame to the vehicle suspension.
Resistive pressure sensor with improved structure design
A transparent resistive pressure sensor and method of making the same are disclosed. The transparent resistive pressure sensor may include a flexible pressure substrate, a pressure electrode layer, an elastic dielectric spacer with microstructure, a transparent pressure-sensitive composite layer composed of a transparent polymer dielectric matrix and a conductive one-dimensional nanomaterial oriented substantially in a thickness direction of the transparent pressure-sensitive composite layer, a support electrode layer, and a support substrate, where the elastic dielectric spacer with microstructure may include a transparent elastic dielectric film and a plurality of size-varied straight holes penetrating through the transparent elastic dielectric film in a thickness direction of the transparent elastic dielectric film.
Piezoelectric sensor, pressure detecting device, manufacturing methods and detection method
The present disclosure provides a piezoelectric sensor, a pressure detecting device, their manufacturing methods and a detection method. The piezoelectric sensor comprises a thin film transistor located on a substrate and comprising an active layer, and a piezoelectric layer that is in contact with the active layer of the thin film transistor.
TOUCH SURFACE FUNCTIONALIZED BY A COMBINED FORCE AND PROXIMITY SENSOR
The invention relates to a touch surface comprising: a carrier substrate (510, 610) comprising 2 opposite faces (511, 512) one (511) of the faces being exposed to touch; and comprising on the face (512) opposite the face (511) exposed to touch, a combined proximity and force sensor (300) comprising: an insulating substrate (210); —conductive tracks (221, 222) deposited on said substrate (210) and configured to produce a capacitive sensor; a force sensor (230) consisting of an assembly of conductive nanoparticles in colloidal suspension in an electrically insulating ligand; a protective layer (310) covering the conductive tracks and the nanoparticle assembly.
The invention also relates to a method for detecting and measuring the force applied by a touch against such a touch surface.
STRESS AND/OR STRAIN MEASUREMENT CELL FOR A STRESS AND/OR STRAIN MEASUREMENT SYSTEM
A stress and/or strain measurement cell for a stress and/or strain measurement system. The cell includes a reference contact, a sensor contact and a first current mirror circuit which is integrated into a semiconductor material and has a first conduction path connectable or connected to the reference contact and a second conduction path connectable or connected to the sensor contact. The first conduction path includes a first transistor and the second conduction path includes a second transistor. A first crystal direction of the semiconductor material oriented perpendicular to a first inversion channel of the first transistor is definable for the first inversion channel and a second crystal direction of the semiconductor material oriented perpendicular to a second inversion channel of the second transistor is definable for the second inversion channel. The first crystal direction of the semiconductor material is inclined relative to the second crystal direction of the semiconductor material.