There is provided a method of calibrating multiple chamber pressure sensors of a substrate processing system. The substrate processing system includes: multiple chambers; multiple chamber pressure sensors; multiple gas suppliers configured to supply a gas to an internal space of the multiple chambers; multiple exhausters connected to the internal spaces of the multiple chambers via multiple exhaust flow paths; and multiple first gas flow paths. The method includes: acquiring a third volume, which is a sum of a first volume and a second volume; acquiring a first pressure change rate of the internal space of a selected chamber; calculating a second pressure change rate of the internal space of the selected chamber; and calibrating the selected chamber pressure sensor such that a difference between the first pressure change rate and the second pressure change rate is within a preset range.

There is provided a method of calibrating multiple chamber pressure sensors of a substrate processing system. The substrate processing system includes: multiple chambers; multiple chamber pressure sensors; multiple gas suppliers configured to supply a gas to an internal space of the multiple chambers; multiple exhausters connected to the internal spaces of the multiple chambers via multiple exhaust flow paths; and multiple first gas flow paths. The method includes: acquiring a third volume, which is a sum of a first volume and a second volume; acquiring a first pressure change rate of the internal space of a selected chamber; calculating a second pressure change rate of the internal space of the selected chamber; and calibrating the selected chamber pressure sensor such that a difference between the first pressure change rate and the second pressure change rate is within a preset range.

The present invention concerns a device for controlling the radiotherapy treatment of cancer patients, comprising a gas chamber (10) with flat and parallel electrodes (7), placed at a certain distance (d), a window (2) placed above an electrode (7) and insulating means (4, 5, 6) placed below the electrode (7). The chamber (10) is connected to a collector (8) through which a noble gas is introduced into a cavity (11) of the chamber (10), so that the electric field inside the chamber (10) is due to the polarisation of the chamber (10) and to the charges generated by the radiation pulse. The invention also concerns the related control method.

The present invention concerns a device for controlling the radiotherapy treatment of cancer patients, comprising a gas chamber (10) with flat and parallel electrodes (7), placed at a certain distance (d), a window (2) placed above an electrode (7) and insulating means (4, 5, 6) placed below the electrode (7). The chamber (10) is connected to a collector (8) through which a noble gas is introduced into a cavity (11) of the chamber (10), so that the electric field inside the chamber (10) is due to the polarisation of the chamber (10) and to the charges generated by the radiation pulse. The invention also concerns the related control method.

Methods and apparatus for substrate position calibration for substrate supports in substrate processing systems are provided herein. In some embodiments, a method for positioning a substrate on a substrate support includes: obtaining a plurality of backside pressure values corresponding to a plurality of different substrate positions on a substrate support by repeatedly placing a substrate in a position on the substrate support, and vacuum chucking the substrate to the substrate support and measuring a backside pressure; and analyzing the plurality of backside pressure values to determine a calibrated substrate position.

Methods and apparatus for substrate position calibration for substrate supports in substrate processing systems are provided herein. In some embodiments, a method for positioning a substrate on a substrate support includes: obtaining a plurality of backside pressure values corresponding to a plurality of different substrate positions on a substrate support by repeatedly placing a substrate in a position on the substrate support, and vacuum chucking the substrate to the substrate support and measuring a backside pressure; and analyzing the plurality of backside pressure values to determine a calibrated substrate position.

The present disclosure relates to methods and systems for realization of a reference pressure as well as calibration of devices under test. The techniques leverage the measurement of buoyancy artifacts under vacuum and pressure conditions, and the use of gas law equations and related variables to obtain low uncertainty reference values for pressure among others. The techniques can include measuring an absolute mass difference of buoyancy artifacts under vacuum; measuring effective masses of the buoyancy artifacts under a gas pressure condition, and determining an effective mass difference between the buoyancy artifacts; and determining a low-uncertainty pressure based on the absolute mass difference, effective mass difference, Boltzmann constant, volume difference, molecular weight of the gas at pressure, and temperature of the measurements.

The present disclosure relates to methods and systems for realization of a reference pressure as well as calibration of devices under test. The techniques leverage the measurement of buoyancy artifacts under vacuum and pressure conditions, and the use of gas law equations and related variables to obtain low uncertainty reference values for pressure among others. The techniques can include measuring an absolute mass difference of buoyancy artifacts under vacuum; measuring effective masses of the buoyancy artifacts under a gas pressure condition, and determining an effective mass difference between the buoyancy artifacts; and determining a low-uncertainty pressure based on the absolute mass difference, effective mass difference, Boltzmann constant, volume difference, molecular weight of the gas at pressure, and temperature of the measurements.

There is provided a method of calibrating multiple chamber pressure sensors of a substrate processing system. The substrate processing system includes: multiple chambers; multiple chamber pressure sensors; multiple gas suppliers configured to supply a gas to an internal space of the multiple chambers; multiple exhausters connected to the internal spaces of the multiple chambers via multiple exhaust flow paths; and multiple first gas flow paths. The method includes: acquiring a third volume, which is a sum of a first volume and a second volume; acquiring a first pressure change rate of the internal space of a selected chamber; calculating a second pressure change rate of the internal space of the selected chamber; and calibrating the selected chamber pressure sensor such that a difference between the first pressure change rate and the second pressure change rate is within a preset range.

A monitoring device (118) for monitoring the leak-tightness of a vacuum-insulated system has a corrugated bellows (108) which is connected in terms of flow to an evacuated space (104) of the vacuum-insulated system in such a way that, in the event of an increase in pressure in the evacuated space, the length of the corrugated bellows (108) is adjusted beyond a threshold value. A position detector (113) connected to an energy store (115) responds to the change in length of the corrugated bellows and outputs a signal. The position detector outputs a signal to a display device (116), which provides an indication if a leak in the vacuum-insulated system occurs.