A sensor chip includes multiple sensing blocks each of which includes two or more T-patterned beam structures. Each T-patterned beam structure includes strain-detecting elements, at least one first detection beam, and a second detection beam extending from the first detection beam in a direction perpendicular to the first detection beam. Each T-patterned beam structure includes a connection portion formed by coupling ends of second detection beams in respective T-patterned structures, the connection portion including a force point portion. The sensor chip is configured to detect up to six axes relating to predetermined axial forces or moments around the predetermined axes, based on a change in an output of each of the strain-detecting elements, the output of each strain-detecting element changing in accordance with an input applied to a given force point portion.

A sensor chip includes multiple sensing blocks each of which includes two or more T-patterned beam structures. Each T-patterned beam structure includes strain-detecting elements, at least one first detection beam, and a second detection beam extending from the first detection beam in a direction perpendicular to the first detection beam. Each T-patterned beam structure includes a connection portion formed by coupling ends of second detection beams in respective T-patterned structures, the connection portion including a force point portion. The sensor chip is configured to detect up to six axes relating to predetermined axial forces or moments around the predetermined axes, based on a change in an output of each of the strain-detecting elements, the output of each strain-detecting element changing in accordance with an input applied to a given force point portion.

An integrated circuit is described herein that includes a semiconductor substrate. First and second piezoresistive sensors are on or in the substrate where each have a respective sensing axis extending in first and second directions respectively parallel with a surface of the substrate, where the second direction is perpendicular to the first direction. A third piezoresistive sensor is on or in the substrate and has a respective sensing axis extending in a third direction parallel with the surface of the substrate and neither parallel nor perpendicular to the first and second directions.

Techniques relating to a micro-electro-mechanical (MEMS) device configured to measure direct axial and shear stress components of a stress tensor are described. The MEMS device includes a first and second circuit configured in a double rosette structure coupled with a third circuit in a standard rosette structure to form a triple rosette piezo-resistive gauge circuit. The first circuit includes at least one piezoresistive element suspended from a substrate, and at least one piezoresistive element fixed to the substrate. The second circuit includes each piezoresistive element fixed to the substrate. The third circuit includes at least one piezoresistive element fixed to the substrate. Additionally, the MEMS device may be coupled to one or more processing systems to determine a mechanical stress tensor that is applied to the MEMS device based on measurements received from the MEMS device.

Techniques relating to a micro-electro-mechanical (MEMS) device configured to measure direct axial and shear stress components of a stress tensor are described. The MEMS device includes a first and second circuit configured in a double rosette structure coupled with a third circuit in a standard rosette structure to form a triple rosette piezo-resistive gauge circuit. The first circuit includes at least one piezoresistive element suspended from a substrate, and at least one piezoresistive element fixed to the substrate. The second circuit includes each piezoresistive element fixed to the substrate. The third circuit includes at least one piezoresistive element fixed to the substrate. Additionally, the MEMS device may be coupled to one or more processing systems to determine a mechanical stress tensor that is applied to the MEMS device based on measurements received from the MEMS device.

A system and method for detecting a failure of a fluid film bearing is disclosed. The system and method use one or more non-laser based strain transducers to detect changes in the frequency spectrum of the pressure of the fluid film at one or more locations in the bearing to identify failure or the risk of failure of the bearing. The system and can use metallic film, piezoelectric, and piezoresistive strain sensors to generate alarms when particular frequency bands become present in the strain frequency spectrum. The system and method can also generate strain orbit plots and perform waveform analysis of the time varying strains in the bearing housing caused by time-varying changes in the pressure of the fluid film.

The present invention provides a detection device for detecting a load and moment and capable of increasing the output by a strain gage. The detection device is provided with a characteristic sensor block. The sensor block includes a base having an axis extending in the direction of a load to be detected, a front side wall raised from the base at a position offset from the axis of the base, a rear side wall raised from the base at a position offset from the axis of the base in the direction opposite the front side wall, and an upper wall for connecting the upper end of the front side wall and the upper end of the rear side wall. The sensor block supports each strain gauge on the upper surface of the upper wall. The upper wall includes a center portion located at the center between the front side wall and the rear side wall, a first portion located between the center portion and the front side wall, and a second portion located between the center portion and the rear side wall. The first portion and the second portion, which support the strain gauges, have a smaller thickness than the center portion and are relatively easily deformed or strained.

A microelectromechanical system (MEMS) sensor device comprising at least one microelectromechanical system sensor to characterize intracellular dynamics and behavior of a living biological cell so as to quantitatively measure the mechanical strength thereof. The microelectromechanical system sensor being responsive to mechanical force changes during said cell's contraction, migration, proliferation and differentiation.

A force sensing system for determining if a user input has occurred, the system comprising: an input channel, to receive an input from at least one force sensor; an activity detection stage, to monitor an activity level of the input from the at least one force sensor and, responsive to an activity level which may be indicative of a user input being reached, to generate an indication that an activity has occurred at the force sensor; and an event detection stage to receive said indication, and to determine if a user input has occurred based on the received input from the at least one force sensor.

In one aspect, a transducer body includes a support having clevis halves. The sensor body includes a generally rigid peripheral member disposed about a spaced-apart central hub joined to each of the clevis halves. At least three flexure components couple the peripheral member to the hub. The flexure components are spaced-apart from each other at generally equal angle intervals about the hub; the sensor body further including a flexure assembly for some flexure components joining the flexure component to at least one of the hub and the peripheral member, the flexure assembly being compliant for forces in a radial direction from the hub to the peripheral member. Each flexure assembly is configured such that forces transferred concentrate strain at a midpoint along the length of each corresponding flexure component.