A method of manufacturing a porous pressure sensor, comprising: providing a substrate; forming a piezoelectric film on an upper surface of the substrate; performing a porosification process on the piezoelectric film, such as performing a wet etching process or a heat treatment process to form a porous pressure sensing layer; and forming a first electrode and a second electrode on two opposite sides of the upper surface of the porous pressure sensing layer, respectively. The present application is also directed to a pressure sensors manufactured by the method of manufacturing the porous pressure sensor.

A piezoelectric thin film 3 contains a metal oxide, the metal oxide contains bismuth, potassium, titanium, iron and element M, the element M is at least one of magnesium and nickel, at least a part of the metal oxide is a crystal having a perovskite structure, and a (001) plane, a (110) plane or a (111) plane of the crystal is oriented in a normal direction dn of the surface of the piezoelectric thin film 3.

Provided is a piezoelectric MEMS acoustic sensor, comprising a substrate, an inner electrode area, and an outer electrode area; the outer electrode area is located at the periphery of the inner electrode area, a lower support layer is provided on the top of the substrate, the inner electrode area and the outer electrode area are located on the lower support layer, and an upper support layer made of silicon-based material is provided on the top surfaces of the inner electrode area and the outer electrode area. The piezoelectric MEMS acoustic sensor has high sensitivity, strong resistance to hydrostatic pressure, and satisfies application requirements of different pressure resistance and operating water depth.

Provided is a piezoelectric MEMS acoustic sensor, comprising a substrate, an inner electrode area, and an outer electrode area; the outer electrode area is located at the periphery of the inner electrode area, a lower support layer is provided on the top of the substrate, the inner electrode area and the outer electrode area are located on the lower support layer, and an upper support layer made of silicon-based material is provided on the top surfaces of the inner electrode area and the outer electrode area. The piezoelectric MEMS acoustic sensor has high sensitivity, strong resistance to hydrostatic pressure, and satisfies application requirements of different pressure resistance and operating water depth.

A semiconductor device for ambient sensing including: a cap traversed by a hole; and a main body mechanically coupled to the cap so as to delimit a cavity, which is interposed between the main body and the cap. The main body includes a semiconductor body and a coupling structure, which is interposed between the semiconductor body and the cap and laterally delimits a channel, which fluidically couples the cavity and the hole. The channel performs a mechanical filtering that is finer than the mechanical filtering performed by the hole.

A semiconductor device for ambient sensing including: a cap traversed by a hole; and a main body mechanically coupled to the cap so as to delimit a cavity, which is interposed between the main body and the cap. The main body includes a semiconductor body and a coupling structure, which is interposed between the semiconductor body and the cap and laterally delimits a channel, which fluidically couples the cavity and the hole. The channel performs a mechanical filtering that is finer than the mechanical filtering performed by the hole.

In piezoelectric sensors, conventional amplification factor adjustment methods involving the cutting of a wiring pattern or use of a laser trimmable resistor are unable to adjust the amplification factor when the sensor is in a completed state. As a result, the production process becomes complex and production costs increase. Further, because the amplification factor adjustment is carried out in a different state from that of the finished product, the problem that the amplification factor is not set correctly in the finished product also occurs. A non-volatile memory is incorporated in an integrated circuit in which there are integrated piezoelectric sensor circuit elements. The amplification factor is adjusted by writing data from a writing terminal to change an amplification resistor a.

In piezoelectric sensors, conventional amplification factor adjustment methods involving the cutting of a wiring pattern or use of a laser trimmable resistor are unable to adjust the amplification factor when the sensor is in a completed state. As a result, the production process becomes complex and production costs increase. Further, because the amplification factor adjustment is carried out in a different state from that of the finished product, the problem that the amplification factor is not set correctly in the finished product also occurs. A non-volatile memory is incorporated in an integrated circuit in which there are integrated piezoelectric sensor circuit elements. The amplification factor is adjusted by writing data from a writing terminal to change an amplification resistor a.

A pressing sensor is provided that generates an output voltage of a first polarity by deforming with an operation plate when a part of a user's body touches the operation plate, and generates the output voltage of a second polarity by deforming with the operation plate when the part of the user's body is moved away from the operation plate. Moreover, a calculation unit calculates an electrical parameter integral value by time-integrating an electrical parameter that changes with the output voltage generated by the pressing sensor. The electrical parameter has a third polarity when the output voltage has the first polarity and has a fourth polarity when the output voltage has the second polarity. The calculation unit calculates a subtraction electrical parameter integral value obtained by subtracting a predetermined value having the third polarity per unit time from the electrical parameter integral value.

Provided is a pixel circuit. The pixel circuit includes a conversion element forming a voltage of an input level at a first node, a first transistor adjusting the voltage of the first node to a first level in response to a first signal received at a first time interval, a first capacitive element forming a voltage at a second node based on the voltage of the first node, a second transistor adjusting a level of the voltage of the second node to a second level in response to the first signal, a third transistor forming a voltage at a third node, a fourth transistor outputting a current in response to a second signal received in a second time interval, and a. fifth transistor adjusting the voltage of the third node to a third level in response to a third signal received in a third time interval.