An apparatus for processing a specimen with two or more particle beams, wherein the specimen has a milled side that is processed by a first particle beam and observed by a second particle beam. The specimen is milled during a first milling operation by the first particle beam with the specimen in a first position. Thereafter, the specimen tilts in a second position around an axis of tilt of the specimen. Thereafter, the specimen is milled during a second milling operation. Milling can be performed during continuous tilting of the specimen around the axis of tilt. The axis of tilt of the specimen intersects the milled side. In all the aforementioned positions of the specimen, the second particle beam impinges on the milled side, which enables monitoring of the milling in real time.

An apparatus for processing a specimen with two or more particle beams, wherein the specimen has a milled side that is processed by a first particle beam and observed by a second particle beam. The specimen is milled during a first milling operation by the first particle beam with the specimen in a first position. Thereafter, the specimen tilts in a second position around an axis of tilt of the specimen. Thereafter, the specimen is milled during a second milling operation. Milling can be performed during continuous tilting of the specimen around the axis of tilt. The axis of tilt of the specimen intersects the milled side. In all the aforementioned positions of the specimen, the second particle beam impinges on the milled side, which enables monitoring of the milling in real time.

A precipitate and/or an inclusion in a metal material is extracted by electrolysis using an electrolyte solution. The electrolyte solution contains an adsorbent that is adsorbed to a surface of the precipitate and/or a surface of the inclusion. The extracted precipitate and/or the inclusion can be quantitatively analyzed with high accuracy.

Methods and systems for determining sensitization of an alloy includes correlating laser-induced breakdown spectroscopy (LIBS) measurements with degree of sensitization (DoS) values to determine the sensitization of an alloy. Sensitization is characterized by new phase precipitates preferably along the grain boundaries (GBs). In an embodiment, the method includes the features of (1) selective chemical etching of the new phase precipitate of an alloy to induce quantitative chemical composition change, correlated with the DoS values, on the alloy surface, (2) LIBS measurements to semi-quantitatively probe the chemical composition change on the etched surface due to selective chemical etching, (3) establishing calibration models by correlating the LIBS spectra with the DoS using artificial intelligence (AI) algorithms/approaches to determine a sensitization of an alloy.

Methods and systems for determining sensitization of an alloy includes correlating laser-induced breakdown spectroscopy (LIBS) measurements with degree of sensitization (DoS) values to determine the sensitization of an alloy. Sensitization is characterized by new phase precipitates preferably along the grain boundaries (GBs). In an embodiment, the method includes the features of (1) selective chemical etching of the new phase precipitate of an alloy to induce quantitative chemical composition change, correlated with the DoS values, on the alloy surface, (2) LIBS measurements to semi-quantitatively probe the chemical composition change on the etched surface due to selective chemical etching, (3) establishing calibration models by correlating the LIBS spectra with the DoS using artificial intelligence (AI) algorithms/approaches to determine a sensitization of an alloy.

A specimen machining device includes an illumination system that illuminates a specimen; a camera that photographs the specimen; and a processing unit that controls the illumination system and the camera, and acquires a machining control image which is used for controlling an ion source and a display image which is displayed on a display unit. The processing unit controls the illumination system to illuminate the specimen under a machining illumination condition; acquires the machining control image by controlling the camera to photograph the specimen illuminated under the machining control illumination condition; controls the ion source based on the machining control image; controls the illumination system to illuminate the specimen under a display illumination condition which is different from the machining control illumination condition; acquires the display image by controlling the camera to photograph the specimen illuminated under the display illumination condition; and displays the display image on the display unit.

The present invention relates to methods of delayering a semiconductor integrated circuit die or wafer. In at least one aspect, the method includes exposing a die or wafer to plasma of an etching gas and detecting exposure of one or more metal layers within the die. In one aspect of the invention, the plasma of the etching gas is non-selective and removes all materials in a layer at about the same rate. In another aspect of the invention, two different plasmas of corresponding etching gases are employed with each plasma of the etching gas being selective, thus necessitating the sequential use of both plasmas of corresponding etching gases to remove all materials in a layer.

Methods and systems for performing sample lift-out and protective cap placement for highly reactive materials within charged particle microscopy systems are disclosed herein. Methods include preparing a nesting void in a support structure, translating at least a portion of a sample into the nesting void, and milling material from a region of the support structure that defines the nesting void. The material from the region of the support structure is milled such that at least some of the removed material redeposits to form an attachment bond between the sample and a remaining portion of the support structure. In various embodiments, the sample can then be investigated using one or more of serial sectioning tomography on the sample, enhanced insertable backscatter detector (CBS) analysis on the sample, and electron backscatter diffraction (EBSD) analysis on the sample.

Methods and systems for creating attachments between a sample manipulator and a sample within a charged particle systems are disclosed herein. Methods include translating a sample manipulator so that it is proximate to a sample, and milling portions of the sample manipulator such that portions are removed. The portion of the sample manipulator proximate to the sample is composed of a high sputter yield material, and the high sputter yield material may be the material milled with the charged particle beam such that it is removed from the sample manipulator. According to the present disclosure, the portions of the sample manipulator are milled such that at least some of the removed high sputter yield material redeposits to form an attachment between the sample manipulator and the sample.

The present invention relates to a method for manufacturing a sample for thin film property measurement and analysis, and a sample manufactured thereby and, more specifically, to: a method for manufacturing a sample capable of measuring or analyzing various properties in one sample; and a sample manufactured thereby.