A method for determining a residual retardance of an LCOS (Liquid Crystal on Silicon) panel includes transmitting a light beam to the LCOS panel at an angle of incidence and measuring an intensity of a reflected light beam. The method includes biasing the LCOS panel in a dark state and measuring a dark state intensity of the reflected light beam. The method also includes biasing the LCOS panel in a bright state, and measuring a bright state intensity of the reflected light beam. A residual retardance of the LCOS panel is determined based on a contrast ratio of the bright state intensity and the dark state intensity. The method can also include selecting a compensator for the LCOS panel based on the residual retardance.

An experiment system and method for accurate controlling of macromolecular crystallization process. The system has a platform-equipped horizontal moving slot and channel dedicated backwash module, a droplet adding control module, an observing module, a user observation computer system, and an experimental condition control module. A high-precision movement knob of the x-axis platform and the y-axis platform of the system and the accurate position control of a syringe needle are used to ensure that the macromolecular solution can be added into the correct positions of convex or concave. The crystallization induction period of the target crystal form is determined by the real-time data of the high-speed microcamera, and the crystal cultivation environment is adjusted in real time. This is simple and easy to operate, high in productivity, can be applied to the conventional experimental replication.

A method of evaluating quality of a wafer or an apparatus of evaluating quality of a wafer may include: performing a copper-haze evaluation on a piece of wafer or a single crystal ingot; collecting copper-haze map data and a copper-haze evaluation score based on a result of the copper-haze evaluation; training an artificial intelligence model based on the copper-haze map data and the copper-haze evaluation score; and performing crystal defect evaluation on the piece of the wafer or the single crystal ingot using the learned artificial intelligence model that outputs the copper-haze evaluation score when the copper-haze map data is input.

There is provided a nitride crystal substrate constituted by group-III nitride crystal, containing n-type impurities, with an absorption coefficient α being approximately expressed by equation (1) by a least squares method in a wavelength range of at least 1 μm or more and 3.3 μm or less.

[00001]$\begin{array}{cc}\alpha =N_{e}K{\lambda }^a\left(\mathrm{where}1.5\times {10}^{-19}\le K\le 6.0\times {10}^{-19},a=3\right),& \left(1\right)\end{array}$ here, a wavelength is λ (μm), an absorption coefficient of the nitride crystal substrate at 27° C. is α (cm.sup.−1), a carrier concentration in the nitride crystal substrate is N.sub.e (cm.sup.−3), and K and a are constants, wherein an error of an actually measured absorption coefficient with respect to the absorption coefficient α obtained from equation (1) at a wavelength of 2 μm is within +0.1α, and in a reflection spectrum measured by irradiating the nitride crystal substrate with infrared light, there is no peak with a peak top within a wavenumber range of 1,200 cm.sup.−1 or more and 1,500 cm.sup.−1 or less.

Disclosed is a method for estimating twin defect density in a single-crystal sample, including: (A) etching the observed surface of a single crystal to form etch pits; (B) selecting bar-shaped etch pits caused by twin defect; (C) from the long-axis direction lengths of the etch pits caused by twin defect, estimating the twin defect density by using the following equation: twin defect density=Σkx′.sub.i/area of sample, wherein 2≤k≤3, and x′.sub.i is the long-axis direction length of an etch pit caused by the i-th twin.

A method for determining a residual retardance of an LCOS (Liquid Crystal on Silicon) panel includes transmitting a light beam to the LCOS panel at an angle of incidence and measuring an intensity of a reflected light beam. The method includes biasing the LCOS panel in a dark state and measuring a dark state intensity of the reflected light beam. The method also includes biasing the LCOS panel in a bright state, and measuring a bright state intensity of the reflected light beam. A residual retardance of the LCOS panel is determined based on a contrast ratio of the bright state intensity and the dark state intensity. The method can also include selecting a compensator for the LCOS panel based on the residual retardance.

Methods and systems for forming crystallized products from solutions. Such a method includes depositing an input material in a solvent mixture comprising a solvent and an anti-solvent, increasing the temperature of the solvent mixture with the input material therein to an elevated temperature for a period of time sufficient to fully dissolve the input material in the solvent mixture to form a solution of the material, and performing a series of temperature cycles on the solution to produce a crystallized product from the material in the solution. The solution is alternated between heating cycles and cooling cycles based on the turbidity of the solution, and the solution is filtered to remove and collect the crystallized product therefrom.

An evaluation method of a SiC epitaxial wafer includes: a first observation step of preparing a SiC epitaxial wafer having a high-concentration epitaxial layer having an impurity concentration of 1×10.sup.18 cm.sup.−3 or more, irradiating a surface of the high-concentration epitaxial layer having an impurity concentration of 1×10.sup.18 cm.sup.−3 or more with excitation light, and observing a surface irradiated with the excitation light via a band-pass filter having a wavelength band of 430 nm or less.

Methods of testing pharmaceutical compositions for the presence or absence of active pharmaceutical ingredient (API) crystallinity in an amorphous solid dispersion or solid-state solution using UV/vis spectrometry is provided. Testing may be performed standalone or during manufacturing of a pharmaceutical composition. A predictive model provides for quantitative analysis of the amount of crystalline API based on UV/vis data of corresponding reference samples. Also provided is an apparatus for manufacturing a pharmaceutical composition.

The passivation of a nonlinear optical crystal for use in an inspection tool includes growing a nonlinear optical crystal in the presence of at least one of fluorine, a fluoride ion and a fluoride-containing compound, mechanically preparing the nonlinear optical crystal, performing an annealing process on the nonlinear optical crystal and exposing the nonlinear optical crystal to a hydrogen-containing or deuterium-containing passivating gas.