In a side view, when an angle θ1 formed between the light axis of light incident on a surface of a silicon wafer and the surface (or an imaginary plane corresponding to the surface) is 67° to 78° and an angle formed between the surface of the silicon wafer (or an imaginary plane corresponding to the surface) and the detection optical axis of a photodetector is θ2, θ1−θ2 is −6° to −1° or 1° to 6°.

The present disclosure provides a sample analyzer and an analyzing method thereof. The sample analyzer includes a first beam source configured to provide a first energy beam to a sample, a second beam source configured to provide a second energy beam, which is different from the first energy beam, to the sample, a reflected beam sensor disposed between the second beam source and the sample to detect a reflected beam of the second energy beam, which is reflected by one side of the sample, and a transmitted beam sensor disposed adjacent to the other side of the sample to detect a transmitted beam of the second energy beam.

A method of determining 3D crystallographic orientation on a crystalline surface of a sample. The method includes directing a beam of collimated light at a predetermined angle of incidence, wherein reflections from the crystalline surface are projected onto an image sensing unit positioned in a path of reflected light; obtaining a directional reflectance profile from an image of the reflectance pattern generated by the image sensing unit by pixelising the reflectance pattern into a pixelated-image with a center coinciding an intersection of a specularly reflected light beam and the image sensing unit; and processing the directional reflectance profile based on analyzing reflection intensity data in the pixelated-image of the directional reflectance profile to determine the crystallographic orientation of the crystalline surface. A further method including projecting the reflections onto a detector screen and capturing an image of the reflectance pattern on the detector screen.

Disclosed herein is a super resolution imaging method and system for obtaining an image in a crystal material and/or device.

Provided herein is technology relating to sensors for detecting an analyte and particularly, but not exclusively, to liquid crystal sensors, methods of producing liquid crystal sensors, and methods of using liquid crystal sensors.

A laser irradiation apparatus includes: a laser generation apparatus configured to generate first laser light for performing heat treatment of an object to be processed; a measurement-laser emission unit configured to emit linearly-polarized second laser light toward an irradiation area on the object to be processed to which the first laser light is applied; a first polarizing plate configured to let, of the whole reflected light of the second laser light reflected by the object to be processed, a part of the reflected light that has a first polarization direction pass therethrough; and a measurement-laser detection unit configured to detect the reflected light that has passed through the first polarizing plate.

A rapid photoreflectance spectroscopy technique using parallel demodulation has been developed. A high-speed spectroscopic photo-reflectometer comprising an intensity modulated pump laser beam to modulate the reflectivity of a semiconductor sample and a second spectroscopic probe light beam to measure the modulated reflectance of the sample is disclosed. The modulated pump beam is focused onto the sample where it interacts with the sample. The spectroscopic probe beam is focused onto the sample where it is reflected. The reflected probe beam is collected and its constituent wavelengths are dispersed onto a compact photosensor array further comprising a parallel demodulation circuit for each photosensor element. Demodulated signals may then be passed to a computer for recordation and/or further analysis. A fit to the data may then be performed using standard nonlinear regression techniques, thereby providing rapid characterization of the sample material and/or electronic properties.

Disclosed herein is a super resolution imaging method and system for obtaining an image in a crystal material and/or device.

A method of determining crystallinity may include acquiring a Raman spectrum of each of samples that are crystallized, determining a first sample that exhibits a first Raman spectrum having a first Raman intensity that is largest among the Raman spectra, as an optimal sample, and determining a second sample that exhibits a second Raman spectrum having a second Raman intensity that is within a range from the first Raman intensity based on the first Raman intensity, as a first normal sample.

Stack fault inspection apparatus and method are disclosed. The apparatus includes a sample stage fixing the silicon carbide substrate and allow the incident light to scan the substrate surface; an incident light source configured to irradiate a vertical illumination light of a wavelength corresponding to an energy greater than a band gap energy of the substrate to at least a portion of a surface of the substrate in a direction substantially perpendicular to the surface of the substrate; a photomultiplier tube (PMT) configured to obtain a photoluminescence mapping image having a wavelength corresponding to the band gap energy of the substrate from the surface of the substrate; and a controller configured to process the mapping image and identify stacking faults.