A method can include: irradiating a container with a measuring beam of an irradiation device at measurement points along a measurement direction, wherein a signal indicative of the wall thickness of the container at each measurement point is obtained by means of an optical detector, wherein by means of an evaluation device, the measurement points are compared with a reference curve that specifies the wall thickness of a reference container along the measurement direction, wherein if the comparison results in agreement between the measurement points and the reference curve it is determined that the wall thickness of the container corresponds to a predefined wall thickness and wherein if the comparison does not result in said agreement it is determined that the wall thickness of the container does not correspond to the predefined wall thickness.

Methods and apparatuses are disclosed herein for parameter estimation for metrology. An example method at least includes optimizing, using a parameter estimation network, a parameter set to fit a feature in an image based on one or more models of the feature, the parameter set defining the one or more models, and providing metrology data of the feature in the image based on the optimized parameter set.

Disclosed herein are systems and methods for synthesizing a diamond using a diamond synthesis machine. A processor receives a plurality of images of a diamond during synthesis within a diamond synthesis machine, each of the plurality of images captured within a time period. The processor executes a diamond state prediction machine learning model using the plurality of images to obtain a predicted data object, the predicted data object indicating a predicted state of the diamond within the diamond synthesis machine at a time subsequent to the time period. The processor detects a predicted defect, a number of defects, defect types, and/or sub-features of such defects and/or other characteristics (e.g., a predicted shape, size, and/or other properties of predicted contours for the diamond and/or pocket holder) of the predicted state of the diamond. The processor adjusts operation of the diamond synthesis machine.

A measuring and calculating apparatus to measure and calculate a positional displacement amount of a pattern on a surface of a target object. The apparatus includes: a measuring unit to measure a first two-dimensional intensity distribution of a first diffracted light and a second two-dimensional intensity distribution of a second diffracted light; a storage unit to store a first and a second measurement data respectively indicating the first and the second two-dimensional intensity distribution; and an arithmetic unit to execute arithmetic processing using the first and the second measurement data to acquire difference data between the first and the second measurement data, and calculate a positional displacement amount of a difference pattern between the first and second patterns in accordance with the difference data.

A substrate inspection device for inspecting a substrate, includes: a setting part configured to define a group according to a basic state that is not dependent on a presence or absence of a defect in a substrate and set the defined group for each inspection target substrate; an inspection part configured to perform a defect inspection based on a captured image of the inspection target substrate and an inspection recipe corresponding to the defined group to which the inspection target substrate belongs and including a reference image; a recipe creation part configured to create the inspection recipe for each group; and a determination part configured to perform a determination as to whether a group-setting target substrate, for which the group is set by the setting part, belongs to the group defined by the setting part.

A method of automatically setting optical parameters, using Automatic Optical Inspection (AOI) System, the method includes: obtaining a recommended object image when the AOI system under a first recommended optical parameter set; performing computation on a standard image of a and a recommended image of the to-be-measured object according to an optimized error function to obtain a recommended error value between the standard image and the recommended image; determining whether the recommended error value converges, when determining that the recommended error value does not converge, performing computation according to the recommended error value and first recommended optical parameter set to obtain a second recommended optical parameter set; when the recommended error value converges, deciding the first recommended optical parameter set as the best optical parameter set of the AOI system.

A pattern inspection apparatus includes a light source, a detector, and an inspection unit. The light source is configured to emit light toward an inspection target including stacked silicon substrates. The light has a wavelength band that is greater than or equal to 1.2 micrometers and less than or equal to 5.0 micrometers. The detector is configured to detect transmitted light of the inspection target or reflected light of the inspection target out of the light emitted from the light source. The transmitted light is light transmitted through the inspection target. The reflected light is light reflected by the inspection target. The inspection unit is configured to perform pattern inspection on the basis of a detection result obtained by the detector.

Characteristics of a standard logic cell, e.g., a random logic cell, are determined using an effective cell approximation. The effective cell approximation is smaller than the standard logic cell and represents the density of lines and spaces of the standard logic cell. The effective cell approximation may be produced based on a selected area from the standard logic cell and include the same non-periodic patterns as the selected area. The effective cell approximation, alternatively, may represent non-periodic patterns in the standard logic cell using periodic patterns having a same density of lines and spaces as found in the standard logic cell. A structure on the sample, such as a logic cell or a metrology target produced based on the effective cell approximation is measured to acquire data, which is compared to the data for the effective cell approximation to determine a characteristic of the standard logic cell.

There is provided a system and method of a method of mask inspection, comprising: obtaining a first image representative of at least part of the mask; applying a printing threshold on the first image to obtain a second image; estimating a contour for each structural element of interest (SEI) of a group of SEIs, and extracting a set of attributes characterizing the contour, giving rise to a group of contours corresponding to the group of SEIs and respective sets of attributes associated therewith; for each given contour, identifying, among the remaining contours in the group of contours, one or more reference contours similar to the given contour, by comparing between the respective sets of attributes associated therewith; and measuring a deviation between the given contour and each reference contour thereof, giving rise to one or more measured deviations indicative of whether a defect is present.

An improved apparatus and method for facilitating inspection of a wafer are disclosed. An improved method for facilitating inspection of a wafer comprises identifying a plurality of repeating patterns from reference image data associated with a layout design of the wafer. The method also comprises determining a pattern feature of one of the identified plurality of repeating patterns based on a change of a first characteristic of the reference image data. The method further comprises causing a first area of the wafer corresponding to the determined pattern feature to be evaluated.