Provided is an inductively coupled plasma spectrometric system for measuring an emission state of plasma into which a measurement target sample is fed, the inductively coupled plasma spectrometric system including: a spectrometer configured to resolve light emitted in a measurement region set in the plasma into a plurality of wavelength components; a detection device configured to detect a spatial distribution of the resolved light; and a measuring device configured to measure the detected spatial distribution at every measurement unit time, the measurement unit time being at least shorter than time required for the sample to pass through the measurement region.

Provided is an inductively coupled plasma spectrometric system for measuring an emission state of plasma into which a measurement target sample is fed, the inductively coupled plasma spectrometric system including: a spectrometer configured to resolve light emitted in a measurement region set in the plasma into a plurality of wavelength components; a detection device configured to detect a spatial distribution of the resolved light; and a measuring device configured to measure the detected spatial distribution at every measurement unit time, the measurement unit time being at least shorter than time required for the sample to pass through the measurement region.

Disclosed are embodiments of an improved apparatus and system, and associated methods for optically diagnosing a semiconductor manufacturing process. A hyperspectral imaging system is used to acquire spectrally-resolved images of emissions from the plasma, in a plasma processing system. Acquired hyperspectral images may be used to determine the chemical composition of the plasma and the plasma process endpoint. Alternatively, a hyperspectral imaging system is used to acquire spectrally-resolved images of a substrate before, during, or after processing, to determine properties of the substrate or layers and features formed on the substrate, including whether a process endpoint has been reached; or before or after processing, for inspecting the substrate condition.

Systems and methods are described to determine a prioritization schedule for samples handled by a system with multiple remote sampling systems. A system embodiment includes, but is not limited to, an analysis system at a first location; one or more remote sampling systems at remote from the first location, the one or more remote sampling systems configured to receive a liquid segment and transfer a liquid sample to the analysis system via a transfer line; and a controller communicatively coupled with the analysis system and the one or more remote sampling systems, the controller configured to assign a priority value to a sample for analysis by the analysis system and to manage a queue of samples received from at the one or more remote sampling systems on the basis of the assigned priority value.

Embodiments disclosed herein include an optical sensor system for use in plasma processing tools. In an embodiment, the optical sensor system, comprises an optically clear body with a first surface and a second surface facing away from the first surface. In an embodiment, the optically clear body further comprises a third surface that is recessed from the second surface. In an embodiment, the optical sensor system further comprises a target over the third surface and a first reflector to optically couple the first surface to the target.

Disclosed are embodiments of an improved apparatus and system, and associated methods for optically diagnosing a semiconductor manufacturing process. A hyperspectral imaging system is used to acquire spectrally-resolved images of emissions from the plasma, in a plasma processing system. Acquired hyperspectral images may be used to determine the chemical composition of the plasma and the plasma process endpoint. Alternatively, a hyperspectral imaging system is used to acquire spectrally-resolved images of a substrate before, during, or after processing, to determine properties of the substrate or layers and features formed on the substrate, including whether a process endpoint has been reached; or before or after processing, for inspecting the substrate condition.

A spectrometry system for spectroscopically analyzing a sample is provided. The system includes an excitation source for interacting with the sample; a detector for detecting at least a portion of light absorbed or emitted by the sample, the excitation source and detector being optically coupled via an optical pathway; and an aperture positioned in the optical pathway for limiting transmission of light from the excitation source to the detector; wherein the aperture is configured to have a spatially varying distribution of one or more geometric features that provide regions of variable transmission around an edge of the aperture. Also provided is a mask for use with a spectrometry system, the mask configured to be positioned in an optical pathway between an excitation source and a detector, wherein the mask has a spatially varying distribution of one or more geometric features that provide regions of variable transmission around an edge of the aperture. A method for limiting light throughput from an excitation source to a detector via an aperture in a spectrometry system is also provided.

A spectrometry system for spectroscopically analyzing a sample is provided. The system includes an excitation source for interacting with the sample; a detector for detecting at least a portion of light absorbed or emitted by the sample, the excitation source and detector being optically coupled via an optical pathway; and an aperture positioned in the optical pathway for limiting transmission of light from the excitation source to the detector; wherein the aperture is configured to have a spatially varying distribution of one or more geometric features that provide regions of variable transmission around an edge of the aperture. Also provided is a mask for use with a spectrometry system, the mask configured to be positioned in an optical pathway between an excitation source and a detector, wherein the mask has a spatially varying distribution of one or more geometric features that provide regions of variable transmission around an edge of the aperture. A method for limiting light throughput from an excitation source to a detector via an aperture in a spectrometry system is also provided.

A protection device for an Optical Emission Spectrometer (OES) and a method of protecting a detector to which purge gas is supplied, in an OES, are disclosed. The protection device comprises a timer, which measures a parameter, such as a humidity value, indicative of a shut down time period following cessation of application of purge gas to the detector. The protection device comprises a processor, which determines a start-up time period, based on the parameter, during which purge gas is supplied to the detector prior to cooling of the detector. The processor may selectively trigger commencing or maintaining application of purge gas to the detector or cooling of the detector in dependence on the parameter.

A protection device for an Optical Emission Spectrometer (OES) and a method of protecting a detector to which purge gas is supplied, in an OES, are disclosed. The protection device comprises a timer, which measures a parameter, such as a humidity value, indicative of a shut down time period following cessation of application of purge gas to the detector. The protection device comprises a processor, which determines a start-up time period, based on the parameter, during which purge gas is supplied to the detector prior to cooling of the detector. The processor may selectively trigger commencing or maintaining application of purge gas to the detector or cooling of the detector in dependence on the parameter.