An apparatus for testing an edge portion of a substrate, includes a first illumination source configured to irradiate light to an end portion of the edge portion of the substrate; a second illumination source configured to irradiate light to a lower portion of the edge portion; a third illumination source configured to irradiate light to an upper portion of the edge portion; and first to third photographing portions, respectively corresponding to the first to third illumination sources, wherein the first illumination source comprises a C-shaped cross-section and comprises a first curved surface facing the end portion of the edge portion, the second illumination source comprises a half C-shaped cross-section and comprises a second curved surface facing the lower portion of the edge portion, and the third illumination source comprises a half C-shaped cross-section and comprises a third curved surface facing the upper portion of the edge portion.

A defect observation method includes, as steps executed by a computer system, a first step of acquiring, as a bevel image, an image captured using defect candidate coordinates in a bevel portion as an imaging position by using a microscope or an imaging apparatus; and a second step of detecting a defect in the bevel image. The second step includes a step of determining whether there is at least one portion among a wafer edge, a wafer notch, and an orientation flat in the bevel image, a step of switching and selectively applying a defect detection scheme of detecting the defect from the bevel image from a plurality of schemes which are candidates based on a determination result, and a step of executing a process of detecting the defect from the bevel image in conformity with the switched scheme.

A method for detecting a defect includes: a measurement image including a wafer edge of a wafer to be detected is acquired; an image region to be detected is determined in the measurement image; feature extraction is performed on the image region to be detected to obtain a pixel distribution characteristic of the image region to be detected; and defect detection is performed on the wafer edge based on the pixel distribution characteristic of the image region to be detected.

An apparatus for inspecting plate-like bodies to inspect a side surface of a plate-like body with sheeted coating materials on a top side and bottom side of the plate-like body, is provided. The apparatus includes at least one light emitting unit configured to irradiate the side surface of the plate-like body with light. The apparatus includes at least one light receiving unit configured to receive light reflected with respect to the side surface of the plate-like body. The apparatus includes a conveying unit configured to move at least one among the light emitting unit and the plate-like body and to vary a position of the light on the side surface of the plate-like body, emitted by the light emitting unit. The apparatus includes a determining unit configured to determine whether the side surface of the plate-like body has a defect, by using the light emitted by the light emitting unit, upon occurrence of a condition under which the conveying unit varies the position of the light, on the side surface of the plate-like body, emitted by the light emitting unit.

A method evaluates an edge shape of a silicon wafer, in which as shape parameters in a wafer cross section, when defining a radial direction reference L1, a radial direction reference L2, an intersection point P1, a height reference plane L3, h1 [μm], h2 [μm], a point Px3, a straight line Lx, an angle θx, a point Px0, δ [μm], a point Px1, and a radius Rx [μm], the edge shape of the silicon wafer is measured, values of the shape parameters h1, h2, and δ are set, the shape parameters Rx and θx are calculated in accordance with the definition based on measurement data of the edge shape, and the edge shape of the silicon wafer is determined from the calculated Rx and θx to be evaluated. Consequently, a method evaluates an edge shape of a silicon wafer capable of preventing an occurrence of trouble.

A measurement apparatus and a measurement method capable of speedily and accurately measuring an edge shape are provided. A measurement apparatus according to an aspect of the present disclosure includes an objective lens positioned so that its focal plane cuts across an edge part of a substrate, a detector including a plurality of pixels and configured to detect a reflected light from the edge part of the substrate through a confocal optical system, an optical head in which the objective lens and the detector are disposed, a moving mechanism configured to change a relative position of the optical head with respect to the substrate so that an inclination of the focal plane with respect to the substrate is changed, and a processing unit configured to measure a shape of the edge part.

A device may detect a semiconductor wafer to be transferred from a source wafer carrier to a target wafer carrier, and may cause a light source to illuminate the semiconductor wafer. The device may cause a camera to capture images of the semiconductor wafer after the light source illuminates the semiconductor wafer, and may perform image recognition of the images of the semiconductor wafer to determine whether an edge of the semiconductor wafer is damaged. The device may cause the semiconductor wafer to be provided to the source wafer carrier when the edge of the semiconductor wafer is determined to be damaged, and may cause the semiconductor wafer to be provided to the target wafer carrier when the edge of the semiconductor wafer is determined to be undamaged.

In an embodiment, a system includes: an orientation sensor configured to detect an orientation fiducial on a bevel of a wafer; a pedestal configured to rotate the wafer to allow the orientation sensor to detect the orientation fiducial and place the orientation fiducial at a predetermined orientation position; and a defect sensor configured to detect a wafer defect along a surface of the wafer while rotated by the pedestal.

A substrate processing apparatus 1 is configured to supply a processing liquid to a peripheral portion of a wafer W being rotated. The substrate processing apparatus 1 includes a rotating/holding unit 21 configured to rotate and hold the wafer W; a processing liquid discharging unit 73 configured to discharge the processing liquid toward the peripheral portion of the wafer W held by the rotating/holding unit 21; a variation acquiring unit configured to acquire information upon a variation amount of a deformation of the peripheral portion of the wafer W; and a discharge controller 7 configured to control a discharge angle and a discharge position of the processing liquid from the processing liquid discharging unit 73 onto the peripheral portion based on the information upon the variation amount of the deformation of the peripheral portion acquired by the variation acquiring unit.

An apparatus for testing an edge portion of a substrate, includes a first illumination source configured to irradiate light to an end portion of the edge portion of the substrate; a second illumination source configured to irradiate light to a lower portion of the edge portion; a third illumination source configured to irradiate light to an upper portion of the edge portion; and first to third photographing portions, respectively corresponding to the first to third illumination sources, wherein the first illumination source comprises a C-shaped cross-section and comprises a first curved surface facing the end portion of the edge portion, the second illumination source comprises a half C-shaped cross-section and comprises a second curved surface facing the lower portion of the edge portion, and the third illumination source comprises a half C-shaped cross-section and comprises a third curved surface facing the upper portion of the edge portion.