An arrangement of a 3D measurement device according to the invention comprises an image source in order to produce consecutive images on a surface of an object, a camera to take pictures of the surface, and a processor unit in order to compare the pictures of the camera with said images. The arrangement comprises also a first area and a second area on the images. The arrangement further comprises at least one double detector in order to detect the illuminated first area and the illuminated second area, and a drive unit in order to trigger at least one camera. The drive unit is arranged to trigger the camera if the double detector indicates that a state of the first area changes and a state of the second area changes.

An optical inspection is performed to detect potential defects within integrated circuit devices and a first electron-based inspection of less than all of the potential defects is performed to identify primary actual defects. A process window of manufacturing parameter settings used to manufacture the integrated circuit devices is identified and the integrated circuit devices manufactured using the manufacturing parameter settings inside the process window have less than a threshold number of the primary actual defects. To identify additional actual defects a second electron-based inspection is performed that is limited to selected ones of the potential defects in the integrated circuit devices that were manufactured using the manufacturing parameter settings inside the process window but were uninspected in the first electron-based inspection.

A method for fabricating a semiconductor device is provided. The method includes: loading a substrate on a stage of an apparatus for inspecting the substrate; extracting a first light having a first wavelength from a light by using a light source; acquiring first position information on at least one focal point, formed on the substrate, based on the first wavelength by using a controller, the at least one focal point being a pre-calculated at least one focal point; adjusting a position of at least one from among an objective lens and at least one microsphere in a vertical direction by using the first position information in the controller; condensing the first light, which has passed through the at least one microsphere, on the at least one focal point formed on the substrate; and inspecting the substrate by using the first light condensed on the at least one focal point.

An object is to provide a measurement system or the like that enables selection of appropriate new measurement targets by performing measurement on a limited number of measurement points.

Proposed is a system including a measurement tool; and a computer system configured to communicate with the measurement tool, in which the computer system is configured to calculate, based on feature data of a plurality of locations on a wafer received from the measurement tool, an in-plane distribution of the feature data on the wafer (C), select, based on the calculated in-plane distribution, a new measurement point for acquiring the feature data (D), calculate, based on feature data acquired by measuring the selected new measurement point (B), a new in-plane distribution of the feature data on the wafer (F), and output at least one of the feature data of the new measurement point and the in-plane distribution which are acquired by executing the selection of the new measurement point and the calculation of the new in-plane distribution at least once (H).

A system for inspecting a reflective surface includes a first imaging assembly configured to take a first image of the reflective surface, the first image including depth information, a second imaging assembly configured to take a second image of the reflective surface, the second image including contrast information, and a processor configured to acquire the first image and the second image. The processor is configured to perform: estimating a depth profile of the surface based on the depth information, correlating the depth profile with the second image, and identifying a feature of the reflective surface based on the correlation.

A height of a vertical wire interconnection bonded onto a substrate is measured by first capturing a top view of the vertical wire interconnection and identifying a position of a tip end of the vertical wire interconnection from the top view. A conductive probe is located over the tip end of the vertical wire interconnection, and is lowered towards the vertical wire interconnection until an electrical connection is made between the conductive probe and the tip end of the vertical wire interconnection. A contact height at which the electrical connection is made may thus be determined, wherein the contact height corresponds to the height of the vertical wire interconnection.

The presently-disclosed technology enables real-time inspection of a multitude of subcomponents of a component in parallel. For example, the component may be a semiconductor package, and the subcomponents may include through-silicon vias. One embodiment relates to a method for inspecting multiple subcomponents of a component for defects, the method comprising, for each subcomponent undergoing defect detection: extracting a subcomponent image from image data of the component; computing a transformed feature vector from the subcomponent image; computing pairwise distances from the transformed feature vector to each transformed feature vector in a training set; determining a proximity metric using said pairwise distances; and comparing the proximity metric against a proximity threshold to detect a defect in the subcomponent. Another embodiment relates to a product manufactured using a disclosed method of inspecting multiple subcomponents of a component for defects. Other embodiments, aspects and features are also disclosed.

An object is to shorten time required for visual inspection. A visual inspection device (1) configured to inspect an appearance of an inspection object (30), the visual inspection device (1) including: an imager (3) configured to image the inspection object (30) arranged at a predetermined position of the visual inspection device (1); and a height measurer (11, 12) configured to measure a height of the inspection object (30) carried into the visual inspection device (1) or carried out from the visual inspection device (1).

The method includes detecting a COP in a surface of a reference wafer with a laser surface inspection apparatus to be calibrated and an apparatus for calibration that obtains an X coordinate position and a Y coordinate position of the COP; determining a COP that is detected as the same COP with a determination criterion that a positional difference between a detected position obtained by the laser surface inspection apparatus to be calibrated and a detected position obtained by the apparatus for calibration on the reference wafer surface is within a threshold range; and calibrating the coordinate position identification accuracy of the laser surface inspection apparatus to be calibrated by adopting the X and Y coordinate positions obtained by the apparatus for calibration as true values of the X and Y coordinate positions.

A bump inspection device images a wafer that includes a plurality of bumps arranged in parallel to each other. Each of the bumps is elongated along a first direction that is along a substrate surface. The bump inspection device includes: a laser-light source that emits laser light in a direction that is inclined relative to the substrate surface; a camera that images the substrate surface onto which the laser light is emitted; and a direction adjusting portion that adjusts an arrangement relation between the direction in which the laser light is emitted and an orientation of the wafer to allow the first direction to become inclined relative to the direction in which the laser light is emitted, in a plan view. The camera images the wafer while the first direction is inclined relative to the direction in which the laser light is emitted, in a plan view.