The invention relates to a method of examining a sample using a charged particle microscope, comprising the steps of providing a charged particle beam, as well as a sample, and scanning said charged particle beam over said sample. A first detector is used for detecting emissions of a first type from the sample in response to the beam scanned over the sample. Using spectral information of detected emissions of the first type, a plurality of mutually different phases are assigned to said sample. An image representation of said sample is provided, wherein said image representation contains different color hues. The color hues are selected from a pre-selected range of consecutive color hues in such a way that the selected color hues comprise mutually corresponding intervals within said pre-selected range of consecutive color hues.

A micro light-emitting diode (μLED) chip includes a first electrode layer, a second semiconductor layer located on a surface of the first electrode layer, and a first semiconductor layer located on a side of the second semiconductor layer away from the first electrode layer, and a light-emitting layer located between the first semiconductor layer and the second semiconductor layer. The second semiconductor is electrically connected to the first electrode layer, and is configured to transmit first carriers. The first semiconductor layer is configured to transmit second carriers. The light-emitting layer is configured to be excited to emit light upon combination of the first carriers and the second carriers. A surface of the first semiconductor layer away from the light-emitting layer is a concave-convex microstructure, and convex portions of the concave-convex microstructure are configured to receive an electron beam.

A method of investigating a specimen using charged-particle microscopy, comprising the following steps: (a) On a surface of the specimen, selecting a virtual sampling grid extending in an XY plane and comprising grid nodes to be impinged upon by a charged-particle probing beam during a two-dimensional scan of said surface; (b) Selecting a landing energy E.sub.i for said probing beam, with an associated nominal Z penetration depth d.sub.i below said surface; (c) At each of said nodes, irradiating the specimen with said probing beam and detecting output radiation emanating from the specimen in response thereto, thereby generating a scan image I.sub.i; (d) Repeating steps (b) and (c) for a series {E.sub.i} of different landing energies, corresponding to an associated series {d.sub.i} of different penetration depths, further comprising the following steps: (e) Pre-selecting an initial energy increment ΔE.sub.i by which E.sub.i is to be altered after a first iteration of steps (b) and (c); (f) Associating energy increment ΔE.sub.i with a corresponding depth increment Δd in the value of d.sub.i; (g) Selecting said sampling grid to have a substantially equal node pitch p in X and Y, which pitch p is matched to the value of Δd so as to produce a substantially cubic sampling voxel; (h) Selecting subsequent energy values in the series {E.sub.i} so as to maintain a substantially constant depth increment Δd between consecutive members of the series {d.sub.i}, within the bounds of selected minimum and maximum landing energies E.sub.min and E.sub.max, respectively.

A cathodoluminescence microscope and method are used to identify and classify dislocations within a semiconductor sample. At least two CL polarized images are concurrently obtained from the sample. The images are added together to obtain a total intensity image. A normalized difference of the images is taken to obtain a degree of polarization (DOP) image. The total intensity and DOP images are compared to differentiate between edge dislocations and screw dislocations within the sample. Edge dislocation density and screw dislocation density may then be calculated.

A cathodoluminescence microscope and method are used to identify and classify dislocations within a semiconductor sample. At least two CL polarized images are concurrently obtained from the sample. The images are added together to obtain a total intensity image. A normalized difference of the images is taken to obtain a degree of polarization (DOP) image. The total intensity and DOP images are compared to differentiate between edge dislocations and screw dislocations within the sample. Edge dislocation density and screw dislocation density may then be calculated.

A method for improving the quality/integrity of an EBSD/TKD map, wherein each data point is assigned to a corresponding grid point of a sample grid and represents crystal information based on a Kikuchi pattern detected for the grid point; comprising determining a defective data point of the EBSD/TKD map and a plurality of non-defective neighboring data points, comparing the position of Kikuchi bands of a Kikuchi pattern detected for a grid point corresponding to the defective data point with the positions of bands in at least one simulated Kikuchi pattern corresponding to crystal information of the neighboring data points and assigning the defective data point the crystal information of one of the plurality of neighboring data point based on the comparison.

The radiation detection device includes: a sample holding unit; an optical microscope configured to observe a sample held by the sample holding unit; an irradiation unit that irradiates the sample with radiation; a detection unit that detects radiation generated from the sample; an adjustment unit that adjusts a relationship between a focal position of the optical microscope and a position of the sample such that the optical microscope is focused on one portion of the sample; a change unit that changes a position, on which the optical microscope is to be focused, on the sample; an imaging unit that creates a partial image captured by the optical microscope at the changed position on the sample in a state in which the adjustment unit performs adjustment for focusing; and a sample image creation unit that creates a sample image by combining a plurality of partial images created by the imaging unit.

In various aspects, an apparatus for an electron-beam powder bed fusion (EB-PBF) printer includes a radiation collector configured to collect radiation in an ultraviolet (UV) spectrum at a powder bed surface within a vacuum chamber during an electron beam scanning cycle of EB-PBF operation, an optical fiber configured to be transparent to the radiation in the UV spectrum and configured to receive the radiation at the powder bed surface via the radiation collector, and a processor configured to receive one or more extracted wavelengths of radiation in the UV spectrum based on the radiation carried on the optical fiber.

The invention relates to a method of examining a sample using a charged particle microscope, comprising the steps of providing a charged particle beam, as well as a sample, and scanning said charged particle beam over said sample. A first detector is used for detecting emissions of a first type from the sample in response to the beam scanned over the sample. Using spectral information of detected emissions of the first type, a plurality of mutually different phases are assigned to said sample. An image representation of said sample is provided, wherein said image representation contains different color hues. The color hues are selected from a pre-selected range of consecutive color hues in such a way that the selected color hues comprise mutually corresponding intervals within said pre-selected range of consecutive color hues.

Apparatus include a reflector positioned adjacent to a sample location that is situated to receive a charged particle beam (CPB) along a CPB axis from a CPB focusing assembly so that the reflector is situated to receive light emitted from a sample at the sample location based on a CPB-sample interaction or a photon-sample interaction and to direct the light to a photodetector, and a steering electrode situated adjacent to the reflector so as to direct secondary charged particles emitted from the sample based on the CPB-sample interaction away from the reflector and CPB axis. Methods and systems are also disclosed.