G01N2223/085

ELECTRON SPECTROSCOPY BASED TECHNIQUES FOR DETERMINING VARIOUS CHEMICAL AND ELECTRICAL CHARACTERISTICS OF SAMPLES
20230288355 · 2023-09-14 ·

A measurement system and method are presented for measuring one or more parameters of a sample. The measurement system comprises an excitation system and a detection system. The excitation system is configured to generate combined exciting radiation comprising one- or multi-parameter modulation of multiple exciting signals of different types to be applied to at least a portion of a sample under measurements to thereby induce electron emission response of said at least portion of the sample to said combined exciting radiation. The detection system is configured for detecting the electron emission response of the at least portion of the sample and generating measured data indicative of a modulated change of an electrical state of the at least portion of the sample, thereby enabling determination of one or more parameters of the sample from the measured data.

System and method using x-rays for depth-resolving metrology and analysis

A system and method for analyzing a three-dimensional structure of a sample includes generating a first x-ray beam having a first energy bandwidth less than 20 eV at full-width-at-half maximum and a first mean x-ray energy that is in a range of 1 eV to 1 keV higher than an absorption edge energy of a first atomic element of interest, and that is collimated to have a collimation angular range less than 7 mrad in at least one direction perpendicular to a propagation direction of the first x-ray beam; irradiating the sample with the first x-ray beam at a plurality of incidence angles relative to a substantially flat surface of the sample, the incidence angles of the plurality of incidence angles in a range of 3 mrad to 400 mrad; and simultaneously detecting a reflected portion of the first x-ray beam from the sample and detecting x-ray fluorescence x-rays and/or photoelectrons from the sample.

X-ray analyzer

An X-ray analyzer includes an X-ray source, a straight tube type multi-capillary, a flat plate spectroscopic crystal, a parallel/point focus type multi-capillary X-ray lens, and a Fresnel zone plate. A qualitative analysis is performed over an area on the sample, the flat plate spectroscopic crystal and the Fresnel zone plate are removed from the X-ray optical path, and X-rays are collected by the multi-capillary lens and the sample is irradiated. When analyzing the chemical morphology of an element, the multi-capillary lens retracts from the optical path, the source rotates, and the flat plate spectroscopic crystal and the Fresnel zone plate are inserted on the optical path. A narrow sample area is irradiated by the Fresnel zone plate with X-rays having energy extracted from the flat plate spectroscopic crystal. This makes it possible to carry out accurate qualitative analysis on the sample and perform detailed analysis of more minute parts.

METHOD FOR CHARACTERIZING ENERGY LEVEL OF CORE/SHELL NANOPARTICLE
20220244203 · 2022-08-04 ·

In a method for determining an energy level of a core/shell according to an example, a valence band energy level of a shell and a core-level energy level of a core in a core/shell nanoparticle are measured together, and by using a valence band energy level and a core-level of a core nanoparticle including only a core, a reliable energy level in a core/shell structure may be determined.

SYSTEM AND METHOD USING X-RAYS FOR DEPTH-RESOLVING METROLOGY AND ANALYSIS

A system and method for analyzing a three-dimensional structure of a sample includes generating a first x-ray beam having a first energy bandwidth less than 20 eV at full-width-at-half maximum and a first mean x-ray energy that is in a range of 1 eV to 1 keV higher than an absorption edge energy of a first atomic element of interest, and that is collimated to have a collimation angular range less than 7 mrad in at least one direction perpendicular to a propagation direction of the first x-ray beam; irradiating the sample with the first x-ray beam at a plurality of incidence angles relative to a substantially flat surface of the sample, the incidence angles of the plurality of incidence angles in a range of 3 mrad to 400 mrad; and simultaneously detecting a reflected portion of the first x-ray beam from the sample and detecting x-ray fluorescence x-rays and/or photoelectrons from the sample.

X-RAY REFLECTOMETRY APPARATUS AND METHOD THEREOF FOR MEASURING THREE DIMENSIONAL NANOSTRUCTURES ON FLAT SUBSTRATE

This disclosure relates to an apparatus and methods for applying X-ray reflectometry (XRR) in characterizing three dimensional nanostructures supported on a flat substrate with a miniscule sampling area and a thickness in nanometers. In particular, this disclosure is targeted for addressing the difficulties encountered when XRR is applied to samples with intricate nanostructures along all three directions, e.g. arrays of nanostructured poles or shafts. Convergent X-ray with long wavelength, greater than that from a copper anode of 0.154 nm and less than twice of the characteristic dimensions along the film thickness direction, is preferably used with appropriate collimations on both incident and detection arms to enable the XRR for measurements of samples with limited sample area and scattering volumes.

Hard X-ray photoelectron spectroscopy system

The present invention relates to a hard X-ray photoelectron spectroscopy (HAXPES) system comprising an X-ray tube, an X-ray monochromator, and a sample. The X-ray tube provides a beam of photons, which via the X-ray monochromator is directed through the system so as to excite electrons from the illuminated sample. The X-ray tube is connected to a monochromator vacuum chamber in which the X-ray monochromator is configured to monochromatize and focus the beam onto the sample. The monochromator vacuum chamber is connected to an analysis vacuum chamber, the illuminated sample being mounted inside the analysis vacuum chamber and the analysis vacuum chamber being connected to an electron energy analyser. The electron energy analyser is mounted onto the analysis vacuum chamber. Further, the beam of photons provided from the X-ray tube is divergent and has an energy above 6 keV. The X-ray monochromator also comprises a curved optical element arranged to both monochromatize and focus the diverging beam of photons.

HARD X-RAY PHOTOELECTRON SPECTROSCOPY SYSTEM

The present invention relates to a hard X-ray photoelectron spectroscopy (HAXPES) system comprising an X-ray tube, an X-ray monochromator, and a sample. The X-ray tube provides a beam of photons, which via the X-ray monochromator is directed through the system so as to excite electrons from the illuminated sample. The X-ray tube is connected to a monochromator vacuum chamber in which the X-ray monochromator is configured to monochromatize and focus the beam onto the sample. The monochromator vacuum chamber is connected to an analysis vacuum chamber, the illuminated sample being mounted inside the analysis vacuum chamber and the analysis vacuum chamber being connected to an electron energy analyser. The electron energy analyser is mounted onto the analysis vacuum chamber.

Further, the beam of photons provided from the X-ray tube is divergent and has an energy above 6 keV. The X-ray monochromator also comprises a curved optical element arranged to both monochromatize and focus the diverging beam of photons.

Method of calculating thickness of graphene layer and method of measuring content of silicon carbide by using XPS

A method of calculating a thickness of a graphene layer and a method of measuring a content of silicon carbide, by using X-ray photoelectron spectroscopy (XPS), are provided. The method of calculating the thickness of the graphene layer, which is directly grown on a silicon substrate, includes measuring the thickness of the graphene layer directly grown on the silicon substrate, by using a ratio between a signal intensity of a photoelectron beam emitted from the graphene layer and a signal intensity of a photoelectron beam emitted from the silicon substrate.

Apparatus and method for measuring energy of electrons

Electrons excited by irradiation of a visible light to a sample is at an energy level lower than a vacuum level, thus photoelectrons are not emitted from the sample and energy of excited electrons cannot be measured. The visible light is irradiated to the sample through a mesh electrode. A surface film for reducing the vacuum level is formed on a surface of the sample. With the surface film being formed, photoelectrons are obtained by the visible light, and these photoelectrons are accelerated by the mesh electrode toward a photoelectron spectrometer. Ultraviolet light may be irradiated to the sample and metal having same potential therewith. In this case, the mesh electrode is set at a retracted position to prohibit interaction of the mesh electrode and the ultraviolet light. A difference between the valence band and the Fermi level of the sample can be measured.