This disclosure relates to an apparatus and methods for applying X-ray reflectometry (XRR) in characterizing three dimensional nanostructures supported on a flat substrate with a miniscule sampling area and a thickness in nanometers. In particular, this disclosure is targeted for addressing the difficulties encountered when XRR is applied to samples with intricate nanostructures along all three directions, e.g. arrays of nanostructured poles or shafts. Convergent X-ray with long wavelength, greater than that from a copper anode of 0.154 nm and less than twice of the characteristic dimensions along the film thickness direction, is preferably used with appropriate collimations on both incident and detection arms to enable the XRR for measurements of samples with limited sample area and scattering volumes.

The present invention is intended to provide improved patterned X-ray emitting targets as well as X-ray sources that include patterned X-ray emitting targets as well as X-ray reflectance scatterometry (XRS) systems and also including X-ray photoelectron spectroscopy (XPS) systems and X-ray fluorescence (XRF) systems which employ such X-ray emitting targets.

Methods of determining the presence or absence of fluorocarbon(s) on a substrate using X-ray Photoelectron Spectroscopy (XPS). A method may be used to determine the presence or absence of per- or polyfluoroalkyl substances PFASs. A method may use a porous polymer substrate. A method may use solid-phase extraction (SPE). A method may be used to determine the presence or absence of fluorocarbons in an aqueous sample. An aqueous sample may be a groundwater sample, wastewater sample, potable water sample, drinking water sample, or surface water sample. The limit of detection of fluorine in a method may be 0.05% F or less (for XPS analysis) and/or 20 ng or less on a substrate.

A method for measuring an element concentration of a material includes: a material sample is irradiated with first electromagnetic waves; second electromagnetic waves radiated by the material sample are obtained under the action of the first electromagnetic waves; material property parameters of the material sample are determined by detecting the second electromagnetic waves; and an element concentration of the material sample is determined according to the material property parameters.

The present invention provides a method of deterioration analysis that enables detailed analysis of the deterioration, especially of the surface, of a polymer material containing at least two diene polymers. The present invention relates to a method of deterioration analysis including: irradiating a polymer material containing at least two diene polymers with high intensity x-rays; and measuring x-ray absorption while varying the energy of the x-rays, to analyze the deterioration of each diene polymer.

A thin-film deposition system deposits a thin-film on a wafer. A radiation source irradiates the wafer with excitation light. An emissions sensor detects an emission spectrum from the wafer responsive to the excitation light. A machine learning based analysis model analyzes the spectrum and detects contamination of the thin-film based on the spectrum.

A method of calculating a thickness of a graphene layer and a method of measuring a content of silicon carbide, by using X-ray photoelectron spectroscopy (XPS), are provided. The method of calculating the thickness of the graphene layer, which is directly grown on a silicon substrate, includes measuring the thickness of the graphene layer directly grown on the silicon substrate, by using a ratio between a signal intensity of a photoelectron beam emitted from the graphene layer and a signal intensity of a photoelectron beam emitted from the silicon substrate.

An X-ray analyzer includes an X-ray source, a straight tube type multi-capillary, a flat plate spectroscopic crystal, a parallel/point focus type multi-capillary X-ray lens, and a Fresnel zone plate. A qualitative analysis is performed over an area on the sample, the flat plate spectroscopic crystal and the Fresnel zone plate are removed from the X-ray optical path, and X-rays are collected by the multi-capillary lens and the sample is irradiated. When analyzing the chemical morphology of an element, the multi-capillary lens retracts from the optical path, the source rotates, and the flat plate spectroscopic crystal and the Fresnel zone plate are inserted on the optical path. A narrow sample area is irradiated by the Fresnel zone plate with X-rays having energy extracted from the flat plate spectroscopic crystal. This makes it possible to carry out accurate qualitative analysis on the sample and perform detailed analysis of more minute parts.

A thin-film deposition system deposits a thin-film on a wafer. A radiation source irradiates the wafer with excitation light. An emissions sensor detects an emission spectrum from the wafer responsive to the excitation light. A machine learning based analysis model analyzes the spectrum and detects contamination of the thin-film based on the spectrum.

A system to characterize a film layer within a measurement box is disclosed. The system obtains a first mixing fraction corresponding to a first X-ray beam, the mixing fraction represents a fraction of the first X-ray beam inside a measurement box of a wafer sample, the measurement box represents a bore structure disposed over a substrate and having a film layer disposed inside the bore structure. The system obtains a contribution value for the measurement box corresponding to the first X-ray beam, the contribution value representing a species signal outside the measurement box that contributes to a same species signal inside the measurement box. The system obtains a first measurement detection signal corresponding to a measurement of the measurement box using the first X-ray beam. The system determines a measurement value of the film layer based on the first measurement detection signal, the contribution value, and the first mixing fraction.