An improved charged particle beam inspection apparatus, and more particularly, a particle beam inspection apparatus for detecting a thin device structure defect is disclosed. An improved charged particle beam inspection apparatus may include a charged particle beam source to direct charged particles to a location of a wafer under inspection over a time sequence. The improved charged particle beam apparatus may further include a controller configured to sample multiple images of the area of the wafer at difference times over the time sequence. The multiple images may be compared to detect a voltage contrast difference or changes to identify a thin device structure defect.

An improved charged particle beam inspection apparatus, and more particularly, a particle beam inspection apparatus for detecting a thin device structure defect is disclosed. An improved charged particle beam inspection apparatus may include a charged particle beam source to direct charged particles to a location of a wafer under inspection over a time sequence. The improved charged particle beam apparatus may further include a controller configured to sample multiple images of the area of the wafer at difference times over the time sequence. The multiple images may be compared to detect a voltage contrast difference or changes to identify a thin device structure defect.

An improved charged particle beam inspection apparatus, and more particularly, a particle beam inspection apparatus for detecting a thin device structure defect is disclosed. An improved charged particle beam inspection apparatus may include a charged particle beam source to direct charged particles to a location of a wafer under inspection over a time sequence. The improved charged particle beam apparatus may further include a controller configured to sample multiple images of the area of the wafer at difference times over the time sequence. The multiple images may be compared to detect a voltage contrast difference or changes to identify a thin device structure defect.

An improved charged particle beam inspection apparatus, and more particularly, a particle beam inspection apparatus for detecting a thin device structure defect is disclosed. An improved charged particle beam inspection apparatus may include a charged particle beam source to direct charged particles to a location of a wafer under inspection over a time sequence. The improved charged particle beam apparatus may further include a controller configured to sample multiple images of the area of the wafer at difference times over the time sequence. The multiple images may be compared to detect a voltage contrast difference or changes to identify a thin device structure defect.

There is provided a novel Cu bonding wire for semiconductor devices that achieves a favorable shape stability of a 2nd bonded part. The bonding wire includes: a core material of Cu or a Cu alloy; and a coating layer containing a conductive metal other than Cu formed on a surface of the core material, wherein an average size of crystal grains in a wire circumferential direction, obtained by analyzing a surface of the wire by an electron backscattered diffraction (EBSD) method, is 35 nm or more and 140 nm or less, three or more elements selected from the group consisting of Pd, Pt, Au, Ni, and Ag are contained in a region (hereinafter, referred to as a region d.sub.0-10) from the surface to a depth of 10 nm in a concentration profile in a depth direction of the wire obtained by measurement using Auger electron spectroscopy (AES), and concentration conditions (i) and (ii) below are satisfied: (i) for at least three elements out of the three or more elements contained in the region d.sub.0-10, each element have an average concentration in the region d.sub.0-10 of 5 atomic % or more, and (ii) for all elements out of the three or more elements contained in the region d.sub.0-10, each element have an average concentration in the region d.sub.0-10 of 80 atomic % or less.