An apparatus for inspecting a semiconductor device according to an embodiment includes an X-ray irradiation unit configured to make monochromatic X-rays obliquely incident on the semiconductor device, which is an object at a predetermined angle of incidence, a detection unit configured to detect observed X-rays observed from the object using a plurality of two-dimensionally disposed photodetection elements, an analysis apparatus configured to generate X-ray diffraction images obtained by photoelectrically converting the observed X-rays, and a control unit configured to change an angle of incidence and a detection angle of the X-rays, in which the analysis apparatus acquires an X-ray diffraction image every time the angle of incidence is changed, extracts a peak X-ray diffraction image, X-ray intensity of which becomes maximum for each of pixels and compares the peak X-ray diffraction image among the pixels to thereby estimate a stress distribution of the object.

An X-ray diffraction method measures crystallite size distribution in a polycrystalline sample using an X-ray diffractometer with a two-dimensional detector. The diffraction pattern collected contains several spotty diffraction rings. The spottiness of the diffraction rings is related to the size, size distribution and orientation distribution of the crystallites as well as the diffractometer condition. The invention allows obtaining of the diffraction intensities of all measured crystallites at perfect Bragg condition so that the crystallite size distribution can be measured based on the 2D diffraction patterns.

An apparatus for inspecting a semiconductor device according to an embodiment includes an X-ray irradiation unit configured to make monochromatic X-rays obliquely incident on the semiconductor device, which is an object at a predetermined angle of incidence, a detection unit configured to detect observed X-rays observed from the object using a plurality of two-dimensionally disposed photodetection elements, an analysis apparatus configured to generate X-ray diffraction images obtained by photoelectrically converting the observed X-rays, and a control unit configured to change an angle of incidence and a detection angle of the X-rays, in which the analysis apparatus acquires an X-ray diffraction image every time the angle of incidence is changed, extracts a peak X-ray diffraction image, X-ray intensity of which becomes maximum for each of pixels and compares the peak X-ray diffraction image among the pixels to thereby estimate a stress distribution of the object.

An X-ray inspection device of the present invention includes a sample placement unit 11 for placing a sample as an inspection target therein, a sample placement unit positioning mechanism 30 for moving the sample placement unit 11, a goniometer 20 including first and second rotation members 22, 23 that rotate independently of each other, an X-ray irradiation unit 40 installed on the first rotation member 22, and a two-dimensional X-ray detector 50 installed on the second rotation member 23. The sample placement unit positioning mechanism 30 includes a χ rotation mechanism 35 for rotating the sample placement unit 11 and a ϕ-axis about a χ-axis that is orthogonal to a θs-axis and a θd-axis at a measurement point P and extends horizontally.

An X-ray inspection device of the present invention includes a sample placement unit 11 for placing a sample as an inspection target therein, a sample placement unit positioning mechanism 30 for moving the sample placement unit 11, a goniometer 20 including first and second rotation members 22, 23 that rotate independently of each other, an X-ray irradiation unit 40 installed on the first rotation member 22, and a two-dimensional X-ray detector 50 installed on the second rotation member 23. The sample placement unit positioning mechanism 30 includes a rotation mechanism 35 for rotating the sample placement unit 11 and a -axis about a -axis that is orthogonal to a s-axis and a d-axis at a measurement point P and extends horizontally.

An X-ray diffraction method measures crystallite size distribution in a polycrystalline sample using an X-ray diffractometer with a two-dimensional detector. The diffraction pattern collected contains several spotty diffraction rings. The spottiness of the diffraction rings is related to the size, size distribution and orientation distribution of the crystallites as well as the diffractometer condition. The invention allows obtaining of the diffraction intensities of all measured crystallites at perfect Bragg condition so that the crystallite size distribution can be measured based on the 2D diffraction patterns.

An apparatus and method for inducing high-speed wobble motions to a sample of interest is provided. After the sample is securely attached to a sample mounting block, the sample is variably tilted by using a hexapod stage and simultaneously rotated at a high speed about a rotation axis that is substantially perpendicular to a planar top surface of the hexapod stage. The position of the sample is continuously adjusted during the wobble motion to align a surface center of the sample with a testing center of an X-ray diffractometer. The simultaneous variable tilting and high-speed rotation of the sample induces wobble motions to the sample for randomizing orientations of a sample material's crystallites relative to the source and detector of an X-ray diffractometer.

An apparatus and method for inducing high-speed wobble motions to a sample of interest is provided. After the sample is securely attached to a sample mounting block, the sample is variably tilted by using a hexapod stage and simultaneously rotated at a high speed about a rotation axis that is substantially perpendicular to a planar top surface of the hexapod stage. The position of the sample is continuously adjusted during the wobble motion to align a surface center of the sample with a testing center of an X-ray diffractometer. The simultaneous variable tilting and high-speed rotation of the sample induces wobble motions to the sample for randomizing orientations of a sample material's crystallites relative to the source and detector of an X-ray diffractometer.

A device for measuring short-wavelength characteristic X-ray diffraction based on array detection, and a measurement and analysis method based on the device are provided. An array detector of the device only detects and receives a diffraction ray which is diffracted by a material of a to-be-measured part inside a sample and passes through a through hole of a receiving collimator, and rays passing through a positioning hole. The to-be-measured part inside the sample is placed at the center of the diffractometer circle of the device. The method is performed with the device. With the present disclosure, a diffraction pattern of a part inside the sample with a centimeter thickness, i.e. Debye rings, can be rapidly and non-destructively measured, thereby rapidly and non-destructively measuring and analyzing crystal structures, and its crystal structural change of the part inside the sample, such as phase, texture, and stress.

A method for performing an X-ray diffraction analysis of a crystal sample using a multi-dimensional detector that integrates an X-ray diffraction signal while the position of the sample relative to an X-ray source is changed along a scan direction. The resulting image is compressed along the scan direction, but may be collected very quickly. The capture of both on-axis and off-axis reflections in a single image provides a common spatial frame of reference for comparing the reflections. This may be used in the construction of a reciprocal space map, and is useful for analyzing a sample with multiple crystal layers, such as a crystal substrate with a crystalline film deposited thereupon.