An apparatus for inspecting a semiconductor device according to an embodiment includes an X-ray irradiation unit configured to make monochromatic X-rays obliquely incident on the semiconductor device, which is an object at a predetermined angle of incidence, a detection unit configured to detect observed X-rays observed from the object using a plurality of two-dimensionally disposed photodetection elements, an analysis apparatus configured to generate X-ray diffraction images obtained by photoelectrically converting the observed X-rays, and a control unit configured to change an angle of incidence and a detection angle of the X-rays, in which the analysis apparatus acquires an X-ray diffraction image every time the angle of incidence is changed, extracts a peak X-ray diffraction image, X-ray intensity of which becomes maximum for each of pixels and compares the peak X-ray diffraction image among the pixels to thereby estimate a stress distribution of the object.

The invention relates to a method for processing images obtained by a diffraction detector, of a crystalline or polycrystalline material, in which a first image of the material is acquired in a state of reference as well as a second image of the material in a deformed state. The invention is characterised in that, in a calculator, during a first step (E6, E12), a current elastic deformation gradient tensor F.sup.e is given a value determined by calculation, during a second step (E7), the current displacement field induced by the tensor F.sup.e is calculated, during a third step (E8), third digital values of a deformed image {hacek over (g)}(x)=g(x+u(x)) corrected by the current displacement field are calculated, and during an iterative algorithm, iterations of the second and third steps (E12, E7, E8) are carried out on modified values of the tensor r F.sup.e until a convergence criterion is met in relation to the correction to the current value of F.sup.e.

A thin film analyzing device includes a processing and analyzing chamber for performing processing and analyzing of a subject having a thin film on a substrate. The processing and analyzing chamber includes a sample holder arranged to hold the subject, an X-ray irradiation source arranged to irradiate the subject with X-rays, a fluorescent X-ray detector configured to detect fluorescent X-rays which are emitted from the subject, a diffracted/reflected X-ray detector configured to detect reflected X-rays and diffracted X-rays which are emitted from the subject, and a substrate remover arranged to remove the substrate.

A system and method for inspecting an assembly including components joined by self-piercing rivets by a computerized tomography (CT) scan of the joint is provided. The system includes a source of x-rays, a mounting unit for an assembly including the joint which is subject to the x-rays, and an x-ray detector disposed opposite the source for detecting the x-rays. The x-rays are provided at a high energy level of at least 200 kV to generate images having a resolution of at least 200 micrometers (μm). A computer stitches the images together to form reconstructive images which show details of the joint. The assembly to be inspected is not destroyed or modified prior to the inspection process. The resolution of the images generated by the x-rays is high enough to determine the presence of cracks, if any, the interlock (S.sub.H), minimum thickness (T.sub.min), and overall structure of the unmodified assembly.

A metal material other than strain-free iron powder can be used as a reference piece for X-ray measurement of residual stress. The metal material is manufactured by nanocrystallizing at least a portion of a surface of a metal material, and then removing inherent strain by annealing the metal material, thereby eliminating stress.

A multi-layer arrangement of III-V semiconductor layers includes a strained III-V semiconductor layer having a concentration of a constituent element which effects intensity of a conductive channel formed in the multi-layer arrangement. Lattice parameters of the strained III-V semiconductor layer are determined by generating a first scan in a Qx direction for a chosen reflection in reciprocal space based on diffracted X-Ray beam intensity measurements in the Qx direction. A second scan is generated in a Qz direction for the chosen reflection in the reciprocal space based on diffracted X-Ray beam intensity measurements in the Qz direction. The second scan is aligned with a diffracted X-Ray peak in the first scan which identifies the strained III-V semiconductor layer. The degree of strain of the strained III-V semiconductor layer is determined based on the first scan and the concentration of the constituent element based on the second scan.

A ball-mapping system connectable to an X-ray diffraction apparatus, for collecting X-ray diffraction data at measurement points located on a ball-shaped sample is provided. The system includes a sample stage, including a sample-contacting surface and a guide assembly cooperating with the sample-contacting surface for guiding the sample-contacting surface along a first axis and along a second axis unparallel to the first axis. The system includes a sample holder for keeping the ball-shaped sample in contact with the sample stage and a motor assembly in driving engagement with the guide assembly, the motor assembly driving the sample-contacting surface in translational movement along the first axis and the second axis, the translational movement of the sample-contacting surface causing the ball-shaped sample to rotate, on the sample-contacting surface along the first axis and the second axis. A method for mapping the ball-shaped sample is also provided.

A method of evaluating fatigue damage of a rotor mast. The method includes performing an x-ray diffraction (“XRD”) inspection of the rotor mast, assessing fatigue damage sustained by the rotor mast based on results of the XRD inspection, and determining whether the rotor mast is suitable for continued use based on the assessed fatigue damage.

A grip portion configured to support a test piece is disposed at a central part of a base, and a plurality of pillars are erected on the base. A disposition and number of the plurality of pillars are adjusted so that an X-ray emitted from an X-ray source and transmitting through the test piece transmits through zero or one pillar in an optional image capturing direction. It is possible to avoid a situation in which an attenuation rate of the X-ray largely differs due to a difference in an image capturing direction to the test piece. Thus, it is possible to prevent a strong artifact from overlapping a CT image of the test piece in an X-ray CT image. Moreover, a material testing machine is supported by the plurality of pillars to have an accessible state around the test piece. This configuration facilitates handling of the material testing machine.

A beam shaping apparatus (10) for use in an X-ray analysis device (40). The beam shaping apparatus processes an input N beam (32) from an X-ray beam source (20), and generates an output beam (34) with an output beam shape for irradiating a sample (112) held by a sample holder (22) of the X-ray analysis device. Movement of the output beam shape is controlled in dependence upon a varying tilt angle (χ) of the sample (112), this defined by a tilt position of the sample holder (22).