A method for manufacturing a semiconductor structure is provided, wherein the method includes the following operations. A substrate having a transistor is received, wherein the transistor includes a channel region and a gate on a first side of the channel region. A second side of the channel region of the transistor is exposed, wherein the second side is opposite to the first side. A metal oxide is formed on the second side of the channel region of the transistor, wherein the metal oxide contacts the channel region and is exposed to the environment. A semiconductor structure and an operation of a semiconductor structure thereof are also provided.

A field effect gas sensor, for detecting a presence of a gaseous substance in a gas mixture, the field effect gas sensor comprising: a SiC semiconductor structure; an electron insulating layer covering a first portion of the SiC semiconductor structure; a first contact structure at least partly separated from the SiC semiconductor structure by the electron insulating layer; and a second contact structure conductively connected to a second portion of the SiC semiconductor structure, wherein at least one of the electron insulating layer and the first contact structure is configured to interact with the gaseous substance to change an electrical property of the SiC semiconductor structure; and wherein the second contact structure comprises: an ohmic contact layer in direct contact with the second portion of the SiC semiconductor structure; and a barrier layer formed by an electrically conducting mid-transition-metal oxide covering the ohmic contact layer.

A ratiometric vapor sensor is described that includes a first sensor and a second sensor. The first sensor includes a first semiconductor component comprising a vapor-sensitive semiconducting organic compound, while the second sensor includes a second semiconductor component comprising a modified vapor-sensitive semiconducting organic compound including a modifying organic group. The ratiometric vapor sensor can be used to detect the presence of a vapor such as nitrogen dioxide, and determine the concentration of the vapor by comparing the outputs of electrodes connected to the first and second sensor.

A molecular detection apparatus of an embodiment includes: a first detector which includes a first sensor containing a MOF having a fluorescence emitting property, a light source which irradiates the MOF with light, and a light receiver which receives fluorescence from the MOF; a second detector which includes a sensor layer electrodes electrically connected with the sensor layer; and a type discrimination and concentration calculation part which discriminates a type of the molecules to be detected based on a measurement result measured by the first detector, and calculates a concentration of the molecules a measurement result measured by the second detector based on a discrimination result of a type of the molecules.

A multi-gas sensor to detect food spoilage and a method of forming the same are disclosed. The multi-gas sensor includes a silicon substrate and a plurality of chemical sensitive field effect transistor (CSFET) sensors formed on a surface of the silicon substrate, wherein each one of the plurality of CSFET sensors are decorated with a different material to detect a different gas associated with food spoilage.

A monolithic, three-dimensional (3D) integrated circuit (IC) device includes a sensing layer, a memory layer, and a processing layer. The sensing layer includes a plurality of carbon nanotube field-effect transistors (CNFETs) that are functionalized with at least 50 functional materials to generate data in response to exposure to a gas. The memory layer stores the data generated by the plurality of CNFETs, and the processing layer identifies one or more components of the gas based on the data generated by the plurality of CNFETs.

Heterostructures include a layer of a two-dimensional material placed on a multiferroic layer. An ordered array of differing polarization domains in the multiferroic layer produces corresponding domains having differing properties in the two-dimensional material. When the multiferroic layer is ferroelectric, the ferroelectric polarization domains in the layer produce local electric fields that penetrate the two-dimensional material. The local electric fields modulate the charge carriers and carrier density on a nanometer length scale, resulting in the formation of lateral p-n or p-i-n junctions, and variations thereof appropriate for device functions.

A battery system comprising: an anode composed of a non-toxic biocompatible metal; a first printable carbon-based current collector comprising biocompatible multiple few layer graphene (FLG) sheets in electrical contact with and extending from the anode; a three-dimensional (3D) hierarchical mesoporous carbon-based cathode including an open porous structure configured to catalyze an active material via gas diffusion; a polymer-based barrier film deposited on the 3D hierarchical mesoporous carbon-based cathode, the polymer-based barrier film configured to prevent oxygen from entering the open porous structure while deposited on the 3D hierarchical mesoporous carbon-based cathode; a second printable carbon-based current collector comprising biocompatible multiple few layer graphene (FLG) sheets in electrical contact with and extending from the cathode; and an electrolyte layer disposed between the anode and the cathode, the electrolyte layer configured to activate the battery system when released into one or both of the anode and the cathode.

A microfabricated electrochemical gas sensor is disclosed. The sensor includes electrodes produced from conductor layers, a capping layer, microcavities through the conductor layers and the capping layer, a cavity connecting the microcavities, and an electrolyte filling in the space created by the cavity and the microcavities in the substrate. The microcavities allow gases to pass through but retain the electrolyte through surface tension.

A sensing chip with fluidic device includes a substrate with a first area and a second area, a field effect transistor is arranged in the second area of the substrate and is electrically connected with the field effect transistor. The fluidic device includes an insulation layer with a window to expose the surface of substrate in the second area. A second gate electrode is arranged in the window of the isolation layer on the second area of the substrate. The sample is placed in the fluidic device to contact with the second gate electrode, and the receptor(s) on the metal layer will capture the target object in the sample, so the voltage of the metal layer will change with amount of the target object captured by the receptor(s). Thus, the concentration of the target object(s) in the sample may obtain by the changes of the voltage of the metal layer.