G01N27/60

System and method for monitoring environmental status through reactive reflectors

A system and method for monitoring environmental state that includes a structure element with a base substrate and at least one reflector element integrated to the base substrate, wherein the reflector element is physically configured with at least one response signature that is discretely expressed based on an substance induced environmental condition of the reflector element; and a remote monitor device comprising a transmitter and receiver unit and a controller, wherein the monitor device is configured to interrogate the structure element; detect a response signature corresponding to at least the one reflector element; and map the response signature to a corresponding substance induced environmental condition.

System and method for monitoring environmental status through reactive reflectors

A system and method for monitoring environmental state that includes a structure element with a base substrate and at least one reflector element integrated to the base substrate, wherein the reflector element is physically configured with at least one response signature that is discretely expressed based on an substance induced environmental condition of the reflector element; and a remote monitor device comprising a transmitter and receiver unit and a controller, wherein the monitor device is configured to interrogate the structure element; detect a response signature corresponding to at least the one reflector element; and map the response signature to a corresponding substance induced environmental condition.

Methods of characterizing ion-exchanged chemically strengthened glasses containing lithium

Methods of characterizing ion-exchanged chemically strengthened glass containing lithium are disclosed. The methods allow for performing quality control of the stress profile in chemically strengthened Li-containing glasses having a surface stress spike produced in a potassium-containing salt, especially in a salt having both potassium and sodium. The method allows the measurement of the surface compression and the depth of the spike, and its contribution to the center tension, as well as the compression at the bottom of the spike, and the total center tension and calculation of the stress at the knee where the spike and the deep region of the stress profile intersect. The measurements are for a commercially important profile that is near-parabolic in shape in most of the interior of the substrate apart from the spike.

Methods of characterizing ion-exchanged chemically strengthened glasses containing lithium

Methods of characterizing ion-exchanged chemically strengthened glass containing lithium are disclosed. The methods allow for performing quality control of the stress profile in chemically strengthened Li-containing glasses having a surface stress spike produced in a potassium-containing salt, especially in a salt having both potassium and sodium. The method allows the measurement of the surface compression and the depth of the spike, and its contribution to the center tension, as well as the compression at the bottom of the spike, and the total center tension and calculation of the stress at the knee where the spike and the deep region of the stress profile intersect. The measurements are for a commercially important profile that is near-parabolic in shape in most of the interior of the substrate apart from the spike.

Evaluating a contact between a wafer and an electrostatic chuck

A method, a non-transitory computer readable medium and a device. The method may include (a) introducing a voltage difference between an absolute value of a negative pole of the electrostatic chuck and an absolute value of a positive pole of the electrostatic chuck, the introducing occurs while the wafer is supported by the electrostatic chuck and is contacted by one or more conductive contact pins of the electrostatic chuck; (b) monitoring, by an electrostatic sensor that comprises a sensing element, a charge at a point of measurement located at a front side of the wafer, at different points of time that follow a start of the introducing of the voltage difference, to provide monitoring results; and (c) determining an electrical parameter of the contact between the wafer and the electrostatic chuck, based on the monitoring results.

In-line monitoring of zeta potential measurements

Methods and systems are provided for measuring the zeta potential of macroscopic solid surfaces including and not limited to: porous samples, flat substrates, coarse particles, and granular samples. Methods include: subjecting the sample to an injection of a first aqueous solution at an initial pressure with an initial ion concentration; measuring a first electrical conductivity and a first temperature of the first aqueous solution; measuring a first pH and a second pH of the first aqueous solution immediately before and after passing the first aqueous solution through the sample; measuring a first ion concentration and a second ion concentration of the first aqueous solution immediately before and after passing the first aqueous solution through the sample; and processing the measured data to derive a first zeta potential from the first electrical conductivity and the first temperature.

In-line monitoring of zeta potential measurements

Methods and systems are provided for measuring the zeta potential of macroscopic solid surfaces including and not limited to: porous samples, flat substrates, coarse particles, and granular samples. Methods include: subjecting the sample to an injection of a first aqueous solution at an initial pressure with an initial ion concentration; measuring a first electrical conductivity and a first temperature of the first aqueous solution; measuring a first pH and a second pH of the first aqueous solution immediately before and after passing the first aqueous solution through the sample; measuring a first ion concentration and a second ion concentration of the first aqueous solution immediately before and after passing the first aqueous solution through the sample; and processing the measured data to derive a first zeta potential from the first electrical conductivity and the first temperature.

Inductive humidity sensor and method

Described examples include devices and methods for measuring relative humidity of an environment using inductance. The devices can include a resonant circuit, including a capacitor and an inductor. The inductor includes a moisture-absorbing core with at least a portion thereof exposed to an environment, with at least one magnetic property of the core being variable in response to changing levels of moisture in the environment. An excitation circuit provides an AC excitation signal to the resonant circuit. A sense circuit determines an inductance of the inductor according to a sense signal from the resonant circuit. The sense circuit is coupled to generate an output signal that indicates a humidity level of the environment according to the sense signal.

System and method for high voltage leak detection

A leak detection system includes a testing interface, which includes a rotation holder configured to retain and rotate a package. The testing interface includes a plunger apparatus configured to actuate a plunger to apply a pressure to the package before and/or during the package being inspected using a high voltage leak detection (HVLD) apparatus. The testing interface also includes a controller configured to operate and coordinate the operation of the testing interface with operation of the HVLD apparatus.

System and method for high voltage leak detection

A leak detection system includes a testing interface, which includes a rotation holder configured to retain and rotate a package. The testing interface includes a plunger apparatus configured to actuate a plunger to apply a pressure to the package before and/or during the package being inspected using a high voltage leak detection (HVLD) apparatus. The testing interface also includes a controller configured to operate and coordinate the operation of the testing interface with operation of the HVLD apparatus.