Methods of precisely analyzing and modeling band gap energies and electrical properties of a thin film are provided. One method includes: obtaining a substrate and a thin film disposed above the substrate, the thin film including an interfacial layer above the substrate, and a high-k layer above the interfacial layer; determining a thickness of the thin film; analyzing the thin film using deep ultraviolet spectroscopy ellipsometry to determine the photon energy of reflected light; using a model to determine a set of bandgap energies extracted from a set of results of the photon energy of the analyzing step; and determining at least one of: a leakage current from a main bandgap energy, a nitrogen content from a sub bandgap energy, and an equivalent oxide thickness from the nitrogen content and a composition of the interfacial layer.

A method for determining the original position of a wafer in an ingot made from semiconductor material comprises the following steps: measuring the interstitial oxygen concentration in an area of the wafer; measuring the concentration of thermal donors formed in said area of the wafer during a previous solidification of the ingot; determining the effective time of a thermal donor formation anneal undergone by the wafer when solidification of the ingot took place, from the thermal donor concentration and the interstitial oxygen concentration; and determining the original position of the wafer in the ingot from the effective time.

A method for characterizing a semiconductor sample, said method comprising: shining light on one or more points in said semiconductor sample; measuring one or more voltage decay curves corresponding to said shining of light on said one or more points in said semiconductor sample; extracting one or more intermediate voltage decay curves corresponding to one or more measured voltage decay curves; obtaining one or more normalized decay curves corresponding to one or more intermediate voltage decay curves, each of the said one or more normalized decay curves corresponding to one or more discrete estimates of survival functions; and analyzing said obtained one or more normalized decay curves, said analyzing comprising obtaining one or more discrete estimates of the probability of recombination corresponding to the one or more normalized decay curves, and computing one or more summary statistics corresponding to each of said obtained one or more discrete estimates.

An isolated sensor and method of isolating a sensor are provided. The isolated sensor includes a mounting portion, a sensor portion disposed adjacent to the mounting portion, and at least one pedestal connecting a mounting portion to a sensor portion.

Methods and systems using low temperature thermo-luminescence to measure donor ionization energies in luminescence semiconductors are described.

Systems and methods are described for integrated decomposition and scanning of a semiconducting wafer, where a single chamber is utilized for decomposition and scanning of the wafer of interest.

Systems and methods are described for integrated decomposition and scanning of a semiconducting wafer, where a single chamber is utilized for decomposition and scanning of the wafer of interest.

Systems and methods are described for integrated decomposition and scanning of a semiconducting wafer, where a single chamber is utilized for decomposition and scanning of the wafer of interest.

A method for predicting the electrical functionality of a semiconductor package, the method includes performing a first stiffness test for a first semiconductor package, receiving failure data for the first semiconductor package, the failure data includes results of an electrical test performed after the first semiconductor package is assembled on a printed circuit board, generating a database comprising results of the first stiffness test as a function of the failure data for the first semiconductor package, performing a second stiffness test for a second semiconductor package, identifying a unique result from the results of the first stiffness test in the database, the unique result aligns with a result of the second stiffness test, and predicting a failure data for the second semiconductor package based on the failure data for the first semiconductor package which corresponds to the unique result of the first stiffness test identified in the database.

A sensor device comprises a sensitive element (1) and a support (2) for the sensitive element, the support having a surface (3) with an access opening (4) to the sensitive element (1). A layer of adhesive material (5) covers at least parts of the surface (3). A venting medium (6) extends over the entire surface (3) of the support (2) and the access opening (4) and is attached to the support (2) by the layer of adhesive material (5).