A system and method of operating an atomic force microscope (AFM) that includes providing relative scanning motion between a probe of the AFM and a sample in a slow scan direction of a data scan to generate a reference image (plane) of a region of interest. Then, relative scanning motion between the probe and the sample is provided in a fast scan direction of a final data scan to generate a data image. By mapping the data image against the reference image in real-time during the supplying step, the preferred embodiments generate a final drift corrected data image without post-image acquisition processing.

A system and method of operating an atomic force microscope (AFM) that includes providing relative scanning motion between a probe of the AFM and a sample in a slow scan direction of a data scan to generate a reference image (plane) of a region of interest. Then, relative scanning motion between the probe and the sample is provided in a fast scan direction of a final data scan to generate a data image. By mapping the data image against the reference image in real-time during the supplying step, the preferred embodiments generate a final drift corrected data image without post-image acquisition processing.

A method and device for measuring dimension of a semiconductor structure are provided. A probe of an Atomic Force Microscope (AFM) is controlled at first to move a first distance from a preset reference position to a top surface of a semiconductor structure to be measured in a direction perpendicular to the top surface of the semiconductor structure to be measured, then the probe is controlled to scan the surface of the semiconductor structure to be measured while keeping the first distance in a direction parallel to the top surface of the semiconductor structure to be measured, amplitudes of the probe at respective scanning points on the surface of the semiconductor structure to be measured are detected, and a Critical Dimension (CD) of the semiconductor structure to be measured is determined according to the amplitudes of the probe at respective scanning points on the surface of the semiconductor structure.

In the system and method disclosed, an ultrahigh vacuum (UHV) scanning tunneling microscope (STM) tip is used to selectively desorb hydrogen atoms from the Si(100)-2X1:H surface by injecting electrons at a negative sample bias voltage. A new lithography method is disclosed that allows the STM to operate under imaging conditions and simultaneously desorb H atoms as required. A high frequency signal is added to the negative sample bias voltage to deliver the required energy for hydrogen removal. The resulted current at this frequency and its harmonics are filtered to minimize their effect on the operation of the STM's feedback loop. This approach offers a significant potential for controlled and precise removal of hydrogen atoms from a hydrogen-terminated silicon surface and thus may be used for the fabrication of practical silicon-based atomic-scale devices.

An atomic force microscope is provided having a controller configured to store one or more positional parameters output by a sensor assembly when a light spot is located at a first preset position on the surface of the cantilever. The controller is further configured to operate an actuator assembly so as to induce movement of the spot away from the first preset position, to detect said movement of the first spot based on a change in the one or more positional parameters output by the sensor assembly, and to operate an optical assembly in response to the detected movement of the first spot to return the first spot to the first preset position.

A scanning tunneling microscope including a z-axis scanning assembly; a quantum tunneling tip operatively connected to the z-axis scanning assembly; a z-axis controller configured to communicate with the z-axis scanning assembly; an x-y scanning assembly including a sample platform for holding a sample to be observed and arranged proximate the quantum tunneling tip separated in a z-axis direction from the platform; an x-y controller configured to communicate with the x-y scanning assembly; a measurement circuit connected to the quantum tunneling tip and the sample platform such that a relative electrical voltage is provided between said quantum tunneling tip and the sample platform and so as to measure an electrical current; and a data processor configured to communicate with the z-axis controller and the x-y controller to receive surface imaging information or point spectral information therefrom.

A scanning tunneling microscope including a z-axis scanning assembly; a quantum tunneling tip operatively connected to the z-axis scanning assembly; a z-axis controller configured to communicate with the z-axis scanning assembly; an x-y scanning assembly including a sample platform for holding a sample to be observed and arranged proximate the quantum tunneling tip separated in a z-axis direction from the platform; an x-y controller configured to communicate with the x-y scanning assembly; a measurement circuit connected to the quantum tunneling tip and the sample platform such that a relative electrical voltage is provided between said quantum tunneling tip and the sample platform and so as to measure an electrical current; and a data processor configured to communicate with the z-axis controller and the x-y controller to receive surface imaging information or point spectral information therefrom.

Method for positioning and orienting a first object relative to a second object. The method includes positioning a near field transducer having an aperture on the first object, and directing a laser light toward the aperture of the near field transducer on the first object to create an effervescent wave on the other side of the aperture. Positioning a sensor on the second object for detecting the effervescent wave from the near field transducer. Providing an algorithm, and using information obtained from the sensor on the second object in the algorithm to control a nanopositioning system to position one of the first object and the second object in a desired position and orientation relative to the other one of the first object and the second object.

There may be provided an evaluation system that may include spatial sensors that include atomic force microscopes (AFMs) and a solid immersion lens. The AFMs are arranged to generate spatial relationship information that is indicative of a spatial relationship between the solid immersion lens and a substrate. The controller is arranged to receive the spatial relationship information and to send correction signals to the at least one location correction element for introducing a desired spatial relationship between the solid immersion lens and the substrate.

Method and system in optical microscopy based on the deflection of micro- and nanomechanical structures, upon impact of a laser beam thereon, which simultaneously and automatically provides a spatial map of the static deflection and of the form of various vibration modes, with vertical resolution in the subangstrom range. The invention comprises at least one mechanical structure, an incident laser beam sweeping the surface of the structure, an optometric detector for capturing the laser beam, and frequency excitation means that generate at least two sinusoidal signals at different frequencies in the mechanical structure.