Various examples are provided related to scanning tunneling thermometers and scanning tunneling microscopy (STM) techniques. In one example, a method includes simultaneously measuring conductance and thermopower of a nanostructure by toggling between: applying a time modulated voltage to a nanostructure disposed on an interconnect structure, the time modulated voltage applied at a probe tip positioned over the nanostructure, while measuring a resulting current at a contact of the interconnect structure; and applying a time modulated temperature signal to the nanostructure at the probe tip, while measuring current through a calibrated thermoresistor in series with the probe tip. In another example, a device includes an interconnect structure with connections to a first reservoir and a second reservoir; and a scanning tunneling probe in contact with a probe reservoir. Electrical measurements are simultaneously obtained for temperature and voltage applied to a nanostructure between the reservoirs.

Various examples are provided related to scanning tunneling thermometers and scanning tunneling microscopy (STM) techniques. In one example, a method includes simultaneously measuring conductance and thermopower of a nanostructure by toggling between: applying a time modulated voltage to a nanostructure disposed on an interconnect structure, the time modulated voltage applied at a probe tip positioned over the nanostructure, while measuring a resulting current at a contact of the interconnect structure; and applying a time modulated temperature signal to the nanostructure at the probe tip, while measuring current through a calibrated thermoresistor in series with the probe tip. In another example, a device includes an interconnect structure with connections to a first reservoir and a second reservoir; and a scanning tunneling probe in contact with a probe reservoir. Electrical measurements are simultaneously obtained for temperature and voltage applied to a nanostructure between the reservoirs.

The invention relates to an integrated circuit with an active transistor area and a plurality of wiring layers arranged above the active transistor area. At least one optical device is integrated in the active transistor area. The optical device is electrically connected with at least one of the wiring layers. At least one optical tunnel extends from the at least one optical device through the plurality of wiring layers to a surface of an uppermost wiring layer of the plurality of wiring layers facing away from the active transistor area.

The invention relates to an integrated circuit with an active transistor area and a plurality of wiring layers arranged above the active transistor area. At least one optical device is integrated in the active transistor area. The optical device is electrically connected with at least one of the wiring layers. At least one optical tunnel extends from the at least one optical device through the plurality of wiring layers to a surface of an uppermost wiring layer of the plurality of wiring layers facing away from the active transistor area.

In order to meet the needs of, in particular, the semi-conductor industry as it requires finer lithography nodes, a method of feedback control for scanning probe microscopy generates a microwave frequency comb of harmonics in a tunneling junction (10) between a probe tip electrode (80) and sample electrode (20) by irradiating the junction with mode-locked pulses of electromagnetic radiation from a laser (90). Utilizing power measurements within one or more harmonics within the microwave frequency comb, the tip-sample distance in the tunneling junction may be regulated by a feedback control (40) utilizing an extremum-seeking algorithm for maximum efficiency and avoid tip crash when used with resistive samples. Ideally, no externally provided DC bias is required to use the method. Utilization of this method contributes to true sub-nanometer resolution of images of carrier distribution in resistive samples such as semi-conductors.

In order to meet the needs of, in particular, the semi-conductor industry as it requires finer lithography nodes, a method of feedback control for scanning probe microscopy generates a microwave frequency comb of harmonics in a tunneling junction (10) between a probe tip electrode (80) and sample electrode (20) by irradiating the junction with mode-locked pulses of electromagnetic radiation from a laser (90). Utilizing power measurements within one or more harmonics within the microwave frequency comb, the tip-sample distance in the tunneling junction may be regulated by a feedback control (40) utilizing an extremum-seeking algorithm for maximum efficiency and avoid tip crash when used with resistive samples. Ideally, no externally provided DC bias is required to use the method. Utilization of this method contributes to true sub-nanometer resolution of images of carrier distribution in resistive samples such as semi-conductors.

A scanning tunneling microscopy based potentiometry system and method for the measurements of the local surface electric potential is presented. A voltage compensation circuit based on this potentiometry system and method is developed and employed to maintain a desired tunneling voltage independent of the bias current flow through the film. The application of this potentiometry system and method to the local sensing of the spin Hall effect is outlined herein, along with the experimental results obtained.

A scanning tunneling microscopy based potentiometry system and method for the measurements of the local surface electric potential is presented. A voltage compensation circuit based on this potentiometry system and method is developed and employed to maintain a desired tunneling voltage independent of the bias current flow through the film. The application of this potentiometry system and method to the local sensing of the spin Hall effect is outlined herein, along with the experimental results obtained.

Various examples are provided related to scanning tunneling thermometers and scanning tunneling microscopy (STM) techniques. In one example, a method includes simultaneously measuring conductance and thermopower of a nanostructure by toggling between: applying a time modulated voltage to a nanostructure disposed on an interconnect structure, the time modulated voltage applied at a probe tip positioned over the nanostructure, while measuring a resulting current at a contact of the interconnect structure; and applying a time modulated temperature signal to the nanostructure at the probe tip, while measuring current through a calibrated thermoresistor in series with the probe tip. In another example, a device includes an interconnect structure with connections to a first reservoir and a second reservoir; and a scanning tunneling probe in contact with a probe reservoir. Electrical measurements are simultaneously obtained for temperature and voltage applied to a nanostructure between the reservoirs.

Various examples are provided related to scanning tunneling thermometers and scanning tunneling microscopy (STM) techniques. In one example, a method includes simultaneously measuring conductance and thermopower of a nanostructure by toggling between: applying a time modulated voltage to a nanostructure disposed on an interconnect structure, the time modulated voltage applied at a probe tip positioned over the nanostructure, while measuring a resulting current at a contact of the interconnect structure; and applying a time modulated temperature signal to the nanostructure at the probe tip, while measuring current through a calibrated thermoresistor in series with the probe tip. In another example, a device includes an interconnect structure with connections to a first reservoir and a second reservoir; and a scanning tunneling probe in contact with a probe reservoir. Electrical measurements are simultaneously obtained for temperature and voltage applied to a nanostructure between the reservoirs.