A nano-indent process for creating a single photon emitter in a two-dimensional materials platform comprising the steps of providing a substrate, providing a layer of polymer, providing a layer of two-dimensional material, utilizing a proximal probe, applying mechanical stress to the layer of two-dimensional material and to the layer of polymer, deforming the layer of two-dimensional material and the layer of polymer, and forming a nano-indent in the two-dimensional material. A single photon emitter in a two-dimensional materials platform comprising a substrate, a deformable polymer film, a two-dimensional material, and a nano-indent in the two-dimensional material.

A nano-indent process for creating a single photon emitter in a two-dimensional materials platform comprising the steps of providing a substrate, providing a layer of polymer, providing a layer of two-dimensional material, utilizing a proximal probe, applying mechanical stress to the layer of two-dimensional material and to the layer of polymer, deforming the layer of two-dimensional material and the layer of polymer, and forming a nano-indent in the two-dimensional material. A single photon emitter in a two-dimensional materials platform comprising a substrate, a deformable polymer film, a two-dimensional material, and a nano-indent in the two-dimensional material.

A quantum dot microscope apparatus is provided. A further aspect employs a tilted or tapered end or tip on a microscopic probe. Another aspect of the present apparatus employs a probe including a quantum dot with only one tunneling lead connected to a power source. A manufacturing aspect includes creating a tapered or asymmetrically shaped specimen-facing end of a probe where a quantum dot is located on the end. A further manufacturing aspect includes using focused ion-beam milling to create a tip or end of a quantum dot microscope probe.

A quantum dot microscope apparatus is provided. A further aspect employs a tilted or tapered end or tip on a microscopic probe. Another aspect of the present apparatus employs a probe including a quantum dot with only one tunneling lead connected to a power source. A manufacturing aspect includes creating a tapered or asymmetrically shaped specimen-facing end of a probe where a quantum dot is located on the end. A further manufacturing aspect includes using focused ion-beam milling to create a tip or end of a quantum dot microscope probe.

A microelectromechanical (MEMS) device is provided. The MEMS device comprises a substrate and a movable structure flexurally connected to the substrate, capable of moving in relation to the substrate, wherein the movable structure further comprising two or more segments having at least one mechanical connection between said segments to provide structural integrity of the moving structure; and wherein the at least one mechanical connection electrically isolates at least two segments

A microelectromechanical (MEMS) device is provided. The MEMS device comprises a substrate and a movable structure flexurally connected to the substrate, capable of moving in relation to the substrate, wherein the movable structure further comprising two or more segments having at least one mechanical connection between said segments to provide structural integrity of the moving structure; and wherein the at least one mechanical connection electrically isolates at least two segments

A scanning tunneling microscope including a z-axis scanning assembly; a quantum tunneling tip operatively connected to the z-axis scanning assembly; a z-axis controller configured to communicate with the z-axis scanning assembly; an x-y scanning assembly including a sample platform for holding a sample to be observed and arranged proximate the quantum tunneling tip separated in a z-axis direction from the platform; an x-y controller configured to communicate with the x-y scanning assembly; a measurement circuit connected to the quantum tunneling tip and the sample platform such that a relative electrical voltage is provided between said quantum tunneling tip and the sample platform and so as to measure an electrical current; and a data processor configured to communicate with the z-axis controller and the x-y controller to receive surface imaging information or point spectral information therefrom.

A scanning tunneling microscope including a z-axis scanning assembly; a quantum tunneling tip operatively connected to the z-axis scanning assembly; a z-axis controller configured to communicate with the z-axis scanning assembly; an x-y scanning assembly including a sample platform for holding a sample to be observed and arranged proximate the quantum tunneling tip separated in a z-axis direction from the platform; an x-y controller configured to communicate with the x-y scanning assembly; a measurement circuit connected to the quantum tunneling tip and the sample platform such that a relative electrical voltage is provided between said quantum tunneling tip and the sample platform and so as to measure an electrical current; and a data processor configured to communicate with the z-axis controller and the x-y controller to receive surface imaging information or point spectral information therefrom.

An apparatus, including a scanning probe microscope base that includes a configured to be secured to an end of an insert in a cryostat; a top configured to be connected to a base of a scanning probe microscope head that is configured to be disposed inside the insert; and a damping system disposed between the frame and the top and comprising a bellows that seals the end of the insert. This sealing separates an ultra-high vacuum (UHV) environment in the insert from a high vacuum (HV) environment surrounding the end of the insert and also positions an upper surface of the top in the UHV environment.

An apparatus, including a scanning probe microscope base that includes a configured to be secured to an end of an insert in a cryostat; a top configured to be connected to a base of a scanning probe microscope head that is configured to be disposed inside the insert; and a damping system disposed between the frame and the top and comprising a bellows that seals the end of the insert. This sealing separates an ultra-high vacuum (UHV) environment in the insert from a high vacuum (HV) environment surrounding the end of the insert and also positions an upper surface of the top in the UHV environment.