A quantum-dot-based measuring system is disclosed. The quantum-dot-based measuring system includes a laser to emit excitation light, an optical fiber probe including a tail end and a tapered tip, and the tapered tip of the optical fiber probe is attached with one or more quantum dots, and the excitation light is injected from the tail end of the optical fiber probe and emitted from the tapered tip to a sample to be detected, an objective lens to collect optical signal reflected by the sample and a spectrometer to receive the optical signal.

A quantum-dot-based measuring system is disclosed. The quantum-dot-based measuring system includes a laser to emit excitation light, an optical fiber probe including a tail end and a tapered tip, and the tapered tip of the optical fiber probe is attached with one or more quantum dots, and the excitation light is injected from the tail end of the optical fiber probe and emitted from the tapered tip to a sample to be detected, an objective lens to collect optical signal reflected by the sample and a spectrometer to receive the optical signal.

Apparatus and method for nano-identification a sample by measuring, with the use of evanescent waves, optical spectra of near-field interaction between the sample and optical nanoantenna oscillating at nano-distance above the sample and discriminating background backscattered radiation not sensitive to such near-field interaction. Discrimination may be effectuated by optical data acquisition at periodically repeated moments of nanoantenna oscillation without knowledge of distance separating nanoantenna and sample. Measurement includes chemical identification of sample on nano-scale, during which absolute value of phase corresponding to near-field radiation representing said interaction is measured directly, without offset. Calibration of apparatus and measurement is provided by performing, prior to sample measurement, a reference measurement of reference sample having known index of refraction. Nano-identification is realized with sub-50 nm resolution and, optionally, in the mid-infrared portion of the spectrum.

Apparatus and method for nano-identification a sample by measuring, with the use of evanescent waves, optical spectra of near-field interaction between the sample and optical nanoantenna oscillating at nano-distance above the sample and discriminating background backscattered radiation not sensitive to such near-field interaction. Discrimination may be effectuated by optical data acquisition at periodically repeated moments of nanoantenna oscillation without knowledge of distance separating nanoantenna and sample. Measurement includes chemical identification of sample on nano-scale, during which absolute value of phase corresponding to near-field radiation representing said interaction is measured directly, without offset. Calibration of apparatus and measurement is provided by performing, prior to sample measurement, a reference measurement of reference sample having known index of refraction. Nano-identification is realized with sub-50 nm resolution and, optionally, in the mid-infrared portion of the spectrum.

This sample holder for a scanning probe microscope is constituted of (1) a container that retains a liquid and (2) a flat-plate-shaped upper cover that covers an upper opening of the container and that has a narrow slit above the position where a sample is placed. In the upper cover, the slit has a slit width with which a thin film of the liquid is formed over the upper surface of the sample when the liquid fills the space between the container and the upper cover. The thin film of the liquid has a film thickness smaller than the distance between the upper surface of the sample and the upper cover.

This invention involves measurement of optical properties of materials with sub-micron spatial resolution through infrared scattering scanning near field optical microscopy (s-SNOM). Specifically, the current invention provides substantial improvements over the prior art by achieving high signal to noise, high measurement speed and high accuracy of optical amplitude and phase. Additionally, it some embodiments, it eliminates the need for an in situ reference to calculate wavelength dependent spectra of optical phase, or absorption spectra. These goals are achieved via improved asymmetric interferometry where the near-field scattered light is interfered with a reference beam in an interferometer. The invention achieves dramatic improvements in background rejection by arranging a reference beam that is much more intense than the background scattered radiation. Combined with frequency selective demodulation techniques, the near-field scattered light can be efficiently and accurately discriminated from background scattered light. These goals are achieved via a range of improvements including a large dynamic range detector, careful control of relative beam intensities, and high bandwidth demodulation techniques. In other embodiments, phase and amplitude stability are improved with a novel s-SNOM configuration. In other embodiments an absorption spectrum may be obtained directly by comparing properties from a known and unknown region of a sample as a function of illumination center wavelength.

This invention involves measurement of optical properties of materials with sub-micron spatial resolution through infrared scattering scanning near field optical microscopy (s-SNOM). Specifically, the current invention provides substantial improvements over the prior art by achieving high signal to noise, high measurement speed and high accuracy of optical amplitude and phase. Additionally, it some embodiments, it eliminates the need for an in situ reference to calculate wavelength dependent spectra of optical phase, or absorption spectra. These goals are achieved via improved asymmetric interferometry where the near-field scattered light is interfered with a reference beam in an interferometer. The invention achieves dramatic improvements in background rejection by arranging a reference beam that is much more intense than the background scattered radiation. Combined with frequency selective demodulation techniques, the near-field scattered light can be efficiently and accurately discriminated from background scattered light. These goals are achieved via a range of improvements including a large dynamic range detector, careful control of relative beam intensities, and high bandwidth demodulation techniques. In other embodiments, phase and amplitude stability are improved with a novel s-SNOM configuration. In other embodiments an absorption spectrum may be obtained directly by comparing properties from a known and unknown region of a sample as a function of illumination center wavelength.

A quantum-dot-based measuring system is disclosed. The quantum-dot-based measuring system includes a laser to emit excitation light, an optical fiber probe including a tail end and a tapered tip, and the tapered tip of the optical fiber probe is attached with one or more quantum dots, and the excitation light is injected from the tail end of the optical fiber probe and emitted from the tapered tip to a sample to be detected, an objective lens to collect optical signal reflected by the sample and a spectrometer to receive the optical signal.

Systems, apparatuses, and methods for realizing a peak-force scattering scanning near-field optical microscopy (PF-SNOM). Conventional scattering-type microscopy (s-SNOM) techniques uses tapping mode operation and lock-in detections that do not provide direct tomographic information with explicit tip-sample distance. Using a peak force scattering-type scanning near-field optical microscopy with a combination of peak force tapping mode and time-gated light detection, PF-SNOM enables direct sectioning of vertical near-field signals from a sample surface for both three-dimensional near-field imaging and spectroscopic analysis. PF-SNOM also delivers a spatial resolution of 5 nm and can simultaneously measure mechanical and electrical properties together with optical near-field signals.

Systems, apparatuses, and methods for realizing a peak-force scattering scanning near-field optical microscopy (PF-SNOM). Conventional scattering-type microscopy (s-SNOM) techniques uses tapping mode operation and lock-in detections that do not provide direct tomographic information with explicit tip-sample distance. Using a peak force scattering-type scanning near-field optical microscopy with a combination of peak force tapping mode and time-gated light detection, PF-SNOM enables direct sectioning of vertical near-field signals from a sample surface for both three-dimensional near-field imaging and spectroscopic analysis. PF-SNOM also delivers a spatial resolution of 5 nm and can simultaneously measure mechanical and electrical properties together with optical near-field signals.