A current sensor includes a magnetic detection unit capable of detecting the magnetism, a first magnetic shield and a second magnetic shield. The first magnetic shield includes a first shield section and two second shield sections respectively connected in the vicinity of the two ends thereof. The second magnetic shield includes a third shield section and two fourth shield sections respectively connected in the vicinity of the two ends thereof. Between the first shield section and the third shield section is a conductor placement region, and the magnetic detection unit is positioned between the first shield section and the conductor placement region and is provided at a magnetic field canceling position where the magnetic field in the second direction is substantially zero at non-energized times after a prescribed current has flowed in the conductor, in relationship to the length of the two fourth shield sections along the third direction.

A magnetic field detection apparatus includes a magnetoresistive effect element and a helical coil. The magnetoresistive effect element includes a magnetoresistive effect film extending in a first axis direction. The helical coil includes a parallel connection including first and second parts extending in a second axis direction inclined with respect to the first axis direction. The first and second parts are adjacent to each other in a third axis direction and coupled to each other in parallel. The helical coil is wound around the magnetoresistive effect element while extending along the third axis direction. The magnetoresistive effect film overlaps the first and second parts in a fourth axis direction orthogonal to the second and third axis directions. The helical coil is configured to be supplied with a current and thereby configured to generate an induction magnetic field to be applied to the magnetoresistive effect film in the third axis direction.

A magnetic sensor system includes two magnetic sensors that detect components in two directions of an external magnetic field, an additional magnetic field generation section, and a signal processing circuit. The additional magnetic field generation section is capable of generating two additional magnetic fields for use in measuring the sensitivities of the two magnetic sensors. The signal processing circuit includes a sensitivity measurement processing section and a detection signal correction processing section. The sensitivity measurement processing section measures the sensitivities based on data concerning changes in the detection signals of the two magnetic sensors when the additional magnetic field generation section is controlled to generate two additional magnetic fields. The detection signal correction processing section performs processing for reducing change components attributable to the two additional magnetic fields on the detection signals of the two magnetic sensors.

A current sensing system, comprising at least one magnetic tunnel junction device placed adjacent to a current carrying conductor electrically connected to a battery of a vehicle. The magnetic tunnel junction device is configured to measure a magnetic field around the conductor. A monitoring device is operatively connected to the magnetic tunnel junction device, wherein the monitoring device is configured to receive the magnetic field measurement and determine an estimate of the current flowing through the conductor.

What is proposed is a current sensor comprising a current rail and comprising a magnetic field sensor, wherein the magnetic field sensor is configured to measure a magnetic field induced by a current flowing through the current rail, wherein a first insulation layer and a second insulation layer are arranged between the current rail and the magnetic field sensor, wherein an interface between the first insulation layer and the second insulation layer is free of a contact with the current rail and/or is free of a contact with the magnetic field sensor.

An improved system for measuring current within a power semiconductor module is disclosed, where the system is integrated within the power module. The system includes a point field detector sensing a magnetic field resulting from current flowing in one phase of the module. A lead frame conductor may be provided to shape the magnetic field and minimize the influence of cross-coupled magnetic fields from currents conducted in other power semiconductor devices within one phase of the module. Optionally, a second point field detector may be provided at a second location within the module to sense a magnetic field resulting from the current flowing in the same phase of the module. Each phase of the power module includes at least one point field detector. A decoupling circuit is provided to decouple multiple currents flowing within the same phase or to decouple currents flowing within different phases of the power module.

A current sensor includes a current transferring conductor to conduct current and four magnetic field sensors with the magnetic field sensors being divided into two pairs of magnetic field sensors. The two magnetic field sensors are arranged in a V-shaped manner on one face of the current transferring conductor. Two magnetic field sensors are arranged in a V-shaped manner on the other face of the current transferring conductor. Of the magnetic field sensors arranged in a V-shaped manner, the ones of each side running parallel to each other form one pair.

A current sensor that is less affected by the residual magnetization is provided. A current sensor of the present invention has a magnetic circuit that is magnetized by electric current; a first magnetic field detecting element that is positioned where a magnetic field, when the electric current is present, is directed in a same direction as a magnetic field that is caused by residual magnetization of the magnetic circuit when the electric current is not present; and a second magnetic field detecting element that is positioned where a magnetic field, when the electric current is present, is directed opposite to a direction of a magnetic field that is caused by residual magnetization of the magnetic circuit when the electric current is not present.

The present invention provides an electric current sensor comprising a substrate and MR sensing circuit. The substrate has a first surface along a first axis and a second axis. The MR sensing circuit is utilized to detect a magnetic filed about a third axis. The MR sensing circuit is formed onto the first surface and has a plurality of MR sensor pairs. Each MR sensor in each MR sensor pair has a plurality of conductive structures, wherein the conductive structures of one MR sensor are symmetrically arranged. Alternatively, the present invention provides an electric current sensing device using a pair of electric sensors symmetrically arranged at two lateral sides of a conductive wire having an electric current flowing therethrough for eliminating the magnetic field along Z axis generated by external environment.

A packaged current sensor integrated circuit includes a primary conductor having an input portion and an output portion configured to carry a current to be measured by a magnetic sensing element supported by a semiconductor die adjacent to the primary conductor. The primary current path contains a mechanical locking feature. The thickness of the molded body of the package is reduced to improve vibration immunity.