According to an example aspect of the present invention, there is provided an electro-optic plasmonic device comprising: a slot waveguide that is defined by a first metallic electrode, a second metallic electrode and dielectric material in a slot between the first and second metallic electrodes. The device is configured to utilize the electric field induced Pockels effect.

A current sensor of a detection target current using a shunt resistor includes: a resistance value correction circuit having: a correction resistor; a signal application unit that applies an alternating current signal to a series circuit of the shunt resistor and the correction resistor; a first voltage detection unit that detects the terminal voltage of the shunt resistor; a second voltage detection unit that detects a terminal voltage of the correction resistor; and a correction unit that calculates the resistance value of the shunt resistor based on a first voltage detection value by the first voltage detection unit and a second voltage detection value by the second voltage detection unit, and corrects the resistance value for current detection based on a calculated resistance value of the shunt resistor.

The following relates generally to optical voltage sensing, and in particular to optical voltage sensing of power grids and of a subject body. For example, some embodiments include an optical resonator comprising: (i) a top electrode layer, (ii) a piezoelectric layer, and (iii) a substrate. A light source may illuminate the optical resonator of the voltage sensor with light comprising an incident optical power at an input wavelength, where the input wavelength is offset from a resonant wavelength of the optical resonator by a baseline voltage. The applied voltage may then be measured by measuring a reflected or transmitted light power.

The voltage measuring device includes: a light source; a polarizer polarizing light emitted from the light source; a grounded conductor provided apart from a high-voltage conductor; a crystal end face electrode being out of contact with the grounded conductor and the high-voltage conductor; a Pockels cell transmitting light from the polarizer; an analyzer transmitting light reflected by the Pockels cell; a photodetector detecting light emitted from the analyzer; an intra-crystal electric field measurement unit converting voltage output by the photodetector into intra-crystal electric field; a bias electrode being out of contact with the crystal end face electrode; a bias supply; a bias supply control unit controlling the bias supply to keep internal electric field of the Pockels cell at zero; and a measurement voltage calculation unit obtaining voltage of the high-voltage conductor based on results output by the intra-crystal electric field measurement unit and the bias supply control unit.

A voltage sensor includes an oscillator that has a circular or roughly circular shape and is supported by a mechanical support member, a fixed electrode that has a predetermined gap between the oscillator and the fixed electrode, and a drive electrode that is placed at a position different from the fixed electrode across the oscillator, and to which an AC drive voltage is applied to make the oscillator oscillate. In the voltage sensor, an electrostatic attractive force acts on the oscillator by applying a voltage to the fixed electrode, and a resonance frequency of the oscillator changes.

In order to measure a voltage, an electro-optic element is placed in an electrical field generated by the voltage, and light is passed from a light source through a Faraday rotator and the electro-optic element onto a reflector and from there back through the electro-optic element and the Faraday rotator, thereby generating a voltage-dependent phase shift between two polarizations of the light. The interference contrast as well as a principal value of the total phase shift between said polarizations are measured and converted to a complex value having an absolute value equal to the contrast and a phase equal to the principal value. This complex value is offset and scaled using calibration values in order to calculate a compensated complex value. The voltage is derived from the compensated complex value.

A three-dimensional surface potential distribution measurement system for measuring a surface potential of a measurement object comprises: a laser light source; a Pockels crystal exhibiting Pockels effect in which a refractive index changes depending on potential difference between the first end surface and the second end surface; a mirror disposed so as to be attached stationarily to the second end surface of the Pockels crystal; a photodetector to detect a light intensity of the laser light corresponding to the potential difference of the Pockels crystal; a housing that holds those elements; a three-dimensional motion-driver capable of three-dimensionally moving the housing; and a driving controller that controls the three-dimensional motion-driver.

The voltage measuring device includes: a light source; a polarizer polarizing light emitted from the light source; a grounded conductor provided apart from a high-voltage conductor; a crystal end face electrode being out of contact with the grounded conductor and the high-voltage conductor; a Pockels cell transmitting light from the polarizer; an analyzer transmitting light reflected by the Pockels cell; a photodetector detecting light emitted from the analyzer; an intra-crystal electric field measurement unit converting voltage output by the photodetector into intra-crystal electric field; a bias electrode being out of contact with the crystal end face electrode; a bias supply; a bias supply control unit controlling the bias supply to keep internal electric field of the Pockels cell at zero; and a measurement voltage calculation unit obtaining voltage of the high-voltage conductor based on results output by the intra-crystal electric field measurement unit and the bias supply control unit.

A photonic integrated circuit including a substrate, a plurality of oxide layers on the substrate, and various passive and active integrated optical components in the plurality of oxide layers. The integrated optical components include silicon nitride waveguides, a Pockets effect phase shifter (e.g., BaTiO.sub.3 phase shifter), a superconductive nanowire single photon detector (SNSPD), an optical isolation structure surrounding the SNSPD, a single photon generator, a thermal isolation structure, a heater, a temperature sensor, a photodiode for data communication (e.g., a Ge photodiode), or a combination thereof.

A current sensor of a detection target current using a shunt resistor includes: a resistance value correction circuit having: a correction resistor; a signal application unit that applies an alternating current signal to a series circuit of the shunt resistor and the correction resistor; a first voltage detection unit that detects the terminal voltage of the shunt resistor; a second voltage detection unit that detects a terminal voltage of the correction resistor; and a correction unit that calculates the resistance value of the shunt resistor based on a first voltage detection value by the first voltage detection unit and a second voltage detection value by the second voltage detection unit, and corrects the resistance value for current detection based on a calculated resistance value of the shunt resistor.