A semiconductor Hall plate-based sensor can provide information about package stress and can be substantially immune to the influence of magnetic fields. In an example, the sensor can include a Hall plate and an excitation circuit. The excitation circuit can provide signals to respective node pairs of the Hall plate. A measurement circuit can receive information about a first electric signal at a first pair of nodes in response to a first portion of the excitation signal, and can receive information about a second electric signal at a second pair of nodes in response to a second portion of the excitation signal. The first and second electric signals can indicate a charge carrier mobility characteristic of the semiconductor, which can be used to provide an indication of physical stress on the sensor.

This application discloses a vector sensor zero-point calibration method, device, and, apparatus, an electronic device, and a non-volatile computer-readable storage medium. The calibration method includes: acquiring reference data during two measurements of a reference vector performed by a vector sensor; acquiring a zero-point offset M.sub.0 of the vector sensor according to the reference data; acquiring original data R.sub.k of any vector measured by the vector sensor; and acquiring valid data V.sub.k according to the zero-point offset M.sub.0 and the original data R.sub.k. With the calibration method in this application, the valid data V.sub.k is obtained after a zero-point error of the original data R.sub.k is eliminated, which is more closely approximated to an actual value of a to-be-measured vector.

Apparatus, systems, methods for measuring a side-channel is disclosed. The methods involve obtaining a first measurement of a magnetic field in a first range from the side-channel of the at least one electronic device; generating a version of the side-channel; obtaining a second measurement of the magnetic field in a second range from the version of the side-channel; and generating a composite measurement of the magnetic field from the side-channel of the at least one electronic device based on the first measurement and the second measurement. The first range includes a minimum threshold and at least a portion of the second range is less than the minimum threshold of the first range.

Current sensing techniques. In an example, a current sensing method includes: generating a first magnetic field measurement; generating a second magnetic field measurement; generating a frequency estimate of a current; calculating a root-mean-square (RMS) value of an estimated amplitude of the current; and generating a temperature estimate of an integrated circuit (IC) configured to perform the method. The method also includes generating a first weighting factor and a second weighting factor based on the frequency estimate, the RMS value, and the temperature estimate, the first weighting factor to control amplification of the first magnetic field measurement and the second weighting factor to control amplification of the second magnetic field measurement.

A magnetic field angle sensor includes a coil configured to generate a magnetic field that induces an eddy current in a rotatable target, a first magnetic field sensing structure positioned proximate to the coil and configured to detect a reflected magnetic field generated by the eddy current induced in the target, a second magnetic field sensing structure positioned proximate to the coil and configured to detect the reflected magnetic field generated by the eddy current induced in the target, wherein the first and second magnetic field sensing structures are configured to detect quadrature components of the reflected magnetic field, and a processing module configured to process the reflected magnetic field detected by the first and second magnetic field sensing structures for determining an angular position of the target.

A sensor cross-talk compensation system includes a semiconductor substrate having a first main surface and a second main surface opposite to the first main surface; a vertical Hall sensor element disposed in the semiconductor substrate, the vertical Hall sensor element is configured to generate a sensor signal in response to a magnetic field impinging thereon; and an asymmetry detector configured to detect an asymmetric characteristic of the vertical Hall sensor element. The asymmetry detector includes a detector main region that vertically extends into the semiconductor substrate from the first main surface towards the second main surface and is of a conductivity type having a first doping concentration; and at least three detector contacts disposed in the detector main region at the first main surface, the at least three detector contacts are ohmic contacts of the conductivity type having a second doping concentration that is higher than the first doping concentration.

A sensor apparatus comprises an electrically conductive chip carrier comprising a busbar, a first connection and a second connection, and a differential magnetic field sensor chip which is arranged on the chip carrier and has two sensor elements. The form of the busbar is such that a measurement current path running from the first connection to the second connection through the busbar comprises a main current path and a bypass current path, wherein the main current path and the bypass current path run parallel to one another, and a bypass current flowing through the bypass current path is less than a main current flowing through the main current path. The magnetic field sensor chip is configured to capture a magnetic field induced by the bypass current.

A metal detector includes at least one sensor that enables to detect the magnetic field created by the transmitter, an error detection system that enables to determine the distortion by comparing the detected magnetic field to the ideal function, and a corrective system which enables to eliminate the distortion by the additional magnetic field that is created according to the detected distortion and/or by the current or voltage applied to the transmitter.

The present disclosure provides a method of providing quadrant information to a magnetic sensing device comprising a magnetic angle sensor, and in particular, a magnetic angle sensor configured to provide 180° absolute angle measurements, such as a 180° anisotropic magnetoresistive (AMR) angle sensor, such that the magnetic sensing device outputs an analog signal encoded with 360° information. In this respect, magnetic sensing device is provided with a magnetic angle sensor and a quadrant detector, which may be provided on the same substrate or two separate substrates, wherein the signal from the quadrant detector is encoded into the analog sine and cosine voltage outputs from the magnetic angle sensor such that the two analog outputs provide 360° angle information.

A readout integrated circuit (IC) architecture for a tunnelling magnetoresistive (TMR) sensor which uses common mode feedback to achieve a performance level suitable for accurate detection of biomagnetic signals. The architecture uses a three-operational amplifier configuration with chopper stabilization. The architecture may form part of a fully integrated biomagnetic sensor electronics package that includes an array of TMR sensors together with modules for signal amplification and conditioning, data conversion and communication.