A sensor apparatus comprises an electrically conductive chip carrier comprising a busbar, a first connection and a second connection, and a differential magnetic field sensor chip which is arranged on the chip carrier and has two sensor elements. The form of the busbar is such that a measurement current path running from the first connection to the second connection through the busbar comprises a main current path and a bypass current path, wherein the main current path and the bypass current path run parallel to one another, and a bypass current flowing through the bypass current path is less than a main current flowing through the main current path. The magnetic field sensor chip is configured to capture a magnetic field induced by the bypass current.

A manufacturing method for a fluxgate chip, comprising: firstly, selecting two high-resistance silicon wafers, electroplating a ferromagnetic core on the surface of one of the two high-resistance silicon wafers, and providing a ferromagnetic core cavity on the surface of the other high-resistance silicon wafer; then, bonding the two high-resistance silicon wafers up and down; next, respectively providing coil grooves, through grooves and electrode windows on the surfaces of opposite sides of the two high-resistance silicon wafers to form a silicon wafer mold; and finally, filling the surface of the silicon wafer mold with alloy. By means of electroplating, post-bonding and final etching, on the one hand, the formed fluxgate chip has both small thickness and sufficient strength, on the other hand, large-scale batch production of the fluxgate chip can be achieved, the working efficiency is improved, and the production cost is reduced.

A manufacturing method for a fluxgate chip, comprising: firstly, selecting two high-resistance silicon wafers, electroplating a ferromagnetic core on the surface of one of the two high-resistance silicon wafers, and providing a ferromagnetic core cavity on the surface of the other high-resistance silicon wafer; then, bonding the two high-resistance silicon wafers up and down; next, respectively providing coil grooves, through grooves and electrode windows on the surfaces of opposite sides of the two high-resistance silicon wafers to form a silicon wafer mold; and finally, filling the surface of the silicon wafer mold with alloy. By means of electroplating, post-bonding and final etching, on the one hand, the formed fluxgate chip has both small thickness and sufficient strength, on the other hand, large-scale batch production of the fluxgate chip can be achieved, the working efficiency is improved, and the production cost is reduced.

A current sensor includes at least one primary circuit that is intended to conduct the current to be measured, and a secondary circuit containing at least four Neel-effect® transducers, each having a coil and a superparamagnetic core. The current sensor is designed on the basis of a printed circuit board, the primary circuit including at least two distinct metal tracks that are composed of one and the same metal and connected to one another by a via made of a rivet, of a tube or of an electrolytic deposit of the same metal.

A current sensor includes at least one primary circuit that is intended to conduct the current to be measured, and a secondary circuit containing at least four Neel-effect® transducers, each having a coil and a superparamagnetic core. The current sensor is designed on the basis of a printed circuit board, the primary circuit including at least two distinct metal tracks that are composed of one and the same metal and connected to one another by a via made of a rivet, of a tube or of an electrolytic deposit of the same metal.

An apparatus and method for the non-destructive determination of the content of the magnetizable and/or non-magnetizable portion of a sample, in which the sample is provided in an air gap of a magnetically conductive yoke, an alternating magnetic field is generated by an alternating magnetic field strength of an excitation coil in the yoke, and first measurement data relating to the sample are collected using a measuring device which is inductively coupled to the yoke, and comparing the first measurement data to second measurement data relating to a reference sample, wherein the same alternating magnetic field strength or the same alternating magnetic field is applied to both the reference sample and the sample and the difference between the two collected sets of measurement data is included as a measure in the determination of the content for the magnetizable and/or non-magnetizable content portion of the sample.

An apparatus and method for the non-destructive determination of the content of the magnetizable and/or non-magnetizable portion of a sample, in which the sample is provided in an air gap of a magnetically conductive yoke, an alternating magnetic field is generated by an alternating magnetic field strength of an excitation coil in the yoke, and first measurement data relating to the sample are collected using a measuring device which is inductively coupled to the yoke, and comparing the first measurement data to second measurement data relating to a reference sample, wherein the same alternating magnetic field strength or the same alternating magnetic field is applied to both the reference sample and the sample and the difference between the two collected sets of measurement data is included as a measure in the determination of the content for the magnetizable and/or non-magnetizable content portion of the sample.

An integrated circuit has a substrate, a circuit, a core structure, a first encapsulation layer, a second encapsulation layer, and an oxide layer. The circuit includes transistors with active regions developed on the substrate and a metal layer formed above the active regions to provide interconnections for the transistors. The core structure is formed above the metal layer. The first encapsulation layer covers the core structure, and it has a first thermal expansion coefficient. The second encapsulation layer covers the first encapsulation layer over the core structure, and it has a second thermal expansion coefficient that is different from the first thermal expansion coefficient. As a part of the stress relief structure, the oxide layer is formed above the second encapsulation layer. The oxide layer includes an oxide thickness sufficient to mitigate a thermal stress between the first and second encapsulation layers.

An integrated circuit has a substrate, a circuit, a core structure, a first encapsulation layer, a second encapsulation layer, and an oxide layer. The circuit includes transistors with active regions developed on the substrate and a metal layer formed above the active regions to provide interconnections for the transistors. The core structure is formed above the metal layer. The first encapsulation layer covers the core structure, and it has a first thermal expansion coefficient. The second encapsulation layer covers the first encapsulation layer over the core structure, and it has a second thermal expansion coefficient that is different from the first thermal expansion coefficient. As a part of the stress relief structure, the oxide layer is formed above the second encapsulation layer. The oxide layer includes an oxide thickness sufficient to mitigate a thermal stress between the first and second encapsulation layers.

A magnetic field measurement device measures a magnetic flux density vector or a magnetic field vector generated from each of segments obtained by segmenting a measurement target surface of a vehicle. A magnetic field evaluation device includes a propagation intensity calculation unit and a display control unit. The propagation intensity calculation unit calculates propagation intensity that is the intensity of a magnetic field or the magnitude of magnetic flux density that propagates from each of the segments to an evaluation point that is separated from the measurement target surface with use of the magnetic flux density vector or the magnetic field vector in each of the segments and a separation distance between the segments and the evaluation point. A display control unit displays on a display unit a propagation intensity distribution image indicating the position of the evaluation point and distribution of the propagation intensity in each of the segments.