A magnetic field angle sensor includes a coil configured to generate a magnetic field that induces an eddy current in a rotatable target, a first magnetic field sensing structure positioned proximate to the coil and configured to detect a reflected magnetic field generated by the eddy current induced in the target, a second magnetic field sensing structure positioned proximate to the coil and configured to detect the reflected magnetic field generated by the eddy current induced in the target, wherein the first and second magnetic field sensing structures are configured to detect quadrature components of the reflected magnetic field, and a processing module configured to process the reflected magnetic field detected by the first and second magnetic field sensing structures for determining an angular position of the target.

A system for detecting analytes in a test sample, and a method for processing the same, is provided. The system includes a cartridge reader unit that has a control unit and a pneumatic system, and a cartridge assembly that prepares the samples with mixing material(s) through communication channels. The assembly has a memory chip with parameters for preparing the sample and at least one sensor (GMR sensor) for detecting analytes in the sample. The assembly is pneumatically and electronically mated with the reader unit via a pneumatic interface and an electronic interface such that the parameters may be implemented via the control unit. The pneumatic system is contained within the unit and has pump(s) and valve(s) for selectively applying fluid pressure to the pneumatic interface of the assembly, and thus through the communication channels, to move the sample and mixing material(s) through and to sensor. The control unit activates the pneumatic system to prepare the sample and provide it to the sensor for detecting analytes, and also processes measurements from the sensor to generate test results.

Provided are magnetoresistance effect element and a Heusler alloy in which an amount of energy required to rotate magnetization can be reduced. The magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer positioned between the first ferromagnetic layer and the second ferromagnetic layer, in which at least one of the first ferromagnetic layer and the second ferromagnetic layer is a Heusler alloy in which a portion of elements of an alloy represented by Co.sub.2Fe.sub.αZ.sub.β is substituted with a substitution element, in which Z is one or more elements selected from the group consisting of Mn, Cr, Al, Si, Ga, Ge, and Sn, α and β satisfy 2.3≤α+β, α<β, and 0.5<α<1.9, and the substitution element is an element different from the Z element and has a smaller magnetic moment than Co.

A magnetic sensor whose output characteristic is less sensitive to the environmental temperature is provided. Magnetic sensor 1 has free layer 24 whose magnetization direction changes in response to an external magnetic field, pinned layer 22 whose magnetization direction is fixed with respect to the external magnetic field, spacer layer 23 that is located between pinned layer 22 and free layer 24 and that exhibits a magnetoresistance effect, and at least one magnet film 25 that applies a bias magnetic field to free layer 24. The film thickness of the magnet film is 15 nm or more and 50 nm or less. The relationship of 0.7≤T.sub.C_HM/T.sub.C_FL≤1.05 is satisfied, where T.sub.C_HM is Curie temperature of the magnet film, and T.sub.C_FL is Curie temperature of the free layer.

A position detection element includes an exchange coupling film having a large exchange coupling magnetic field and a position detection apparatus showing good detection accuracy in a high temperature environment. The position detection element includes an exchange coupling film composed of a fixed magnetic layer and an antiferromagnetic layer stacked on the fixed magnetic layer. The antiferromagnetic layer includes an X(Cr—Mn) layer containing X that is one or more elements selected from the group consisting of platinum group metals and Ni and containing Mn and Cr. The X(Cr—Mn) layer includes a PtMn layer as a first region relatively closer to the fixed magnetic layer and a PtCr layer as a second region relatively farther from the fixed magnetic layer. The content of Mn in the first region is higher than the content of Mn in the second region.

Devices and methods for molecule detection using such devices are disclosed herein. A molecule detection device comprises at least one fluidic channel configured to receive molecules to be detected, a sensor comprising a spin torque oscillator (STO) and encapsulated by a material separating the sensor from the at least one fluidic channel, and detection circuitry coupled to the sensor. At least some of the molecules to be detected are labeled by magnetic nanoparticles (HNPs). A surface of the material provides binding sites for the molecules to be detected. The detection circuitry is configured to detect a frequency or frequency noise of a radio-frequency (RF) signal generated by the STO in response to presence or absence of at least one MNP coupled to one or more binding sites associated with the sensor.

According to one embodiment, a sensor includes an element part, and a control circuit part. The element part includes first and second elements. Each of the first and second elements includes a first magnetic element and a first conductive member. The control circuit part includes a first current circuit, a differential circuit, and a phase detection circuit. The first current circuit is configured to supply a first current to the first conductive member. The differential circuit is configured to output a differential signal corresponding to a difference of a first signal and a second signal. The first signal corresponds to a change in a first electrical resistance of the first magnetic element of the first element, The second signal corresponds to a change in a second electrical resistance of the first magnetic element of the second element. The phase detection circuit is configured to perform a phase detection of the differential signal.

A method of detecting a biological sample includes the following steps. A magnetic sensor chip is provided, wherein the magnetic sensor chip includes a substrate and a magnetic sensing layer located on the substrate. Probes are connected to the magnetic sensor chip. A sample solution containing biological samples labeled with a first marker is provided on the magnetic sensor chip, so that the biological samples labeled with the first marker are hybridized with the probes. Magnetic beads labeled with a second marker are provided on the magnetic sensor chip, so that the magnetic beads labeled with the second marker are bound onto the biological samples labeled with the first marker. A signal sensed by the magnetic sensing layer is detected by a magnetic sensor.

A memory element including a layered structure including a memory layer having magnetization perpendicular to a film face in which a direction of the magnetization is changed depending on information stored therein, a magnetization-fixed layer having magnetization perpendicular to the film face, which becomes a base of the information stored in the memory layer, and an intermediate layer that is formed of a non-magnetic material and is provided between the memory layer and the magnetization-fixed layer.

The present disclosure relates to a magnetic sensor device having at least one magneto-resistive structure. The magneto-resistive structure comprises a magnetic free layer configured to generate a closed flux magnetization pattern in the free layer, and a magnetic reference layer having non-closed flux reference magnetization pattern; and a magnetic flux concentrator configured to increase a flux density of an external magnetic field in the magnetic free layer.