According to one embodiment, a radiation detector includes first and second resin members, a detection part, a wiring part, and a controller. The first resin member includes first and second partial regions, and a third partial region between the first and second partial regions. The second resin member includes fourth and fifth partial regions. The detection part is provided between the first and fourth partial regions. The detection part includes a first conductive layer, a second conductive layer provided between the first conductive layer and the fourth partial region, and an organic semiconductor layer provided between the first and second conductive layers. The wiring part is provided between the third and fifth partial regions. The wiring part includes first and second wiring layers. The controller is fixed to the second partial region. The controller is electrically connected with the first and second wiring layers.

A radiation detector, which can reduce power consumption of a read-out module, comprises: a radiation detection unit which includes a plurality of pixels connected to a plurality of gate lines and a plurality of data lines that intersect and arranged in a matrix form, and which store, in the plurality of pixels, charges generated in proportion to radiation dosage; a gate module for selecting at least one of the plurality of gate lines and controlling the selected gate line; the read-out module for selecting at least one of the plurality of data lines, and reading charges stored in at least one exposure detection pixel determined by the selected data line and the selected gate line; and an automatic exposure detection unit for determining whether the radiation detection unit is exposed to radiation by using a charge quantity read by the read-out module from the exposure detection pixel in every preset period.

A neutron detector having high sensitivity of detection for low energy neutrons is provided. The neutron detector 10 includes a detecting element including a Si semiconductor layer 2, a first electrode 1 formed on one main surface of the Si semiconductor layer 2 and a second electrode 4 formed on the other main surface of the Si semiconductor layer 2, in which the Si semiconductor layer 2 includes a P-type impurity region 2a in contact with the second electrode 4 and an N-type impurity region 2b in contact with the first electrode 1; and a radiator 8 arranged to face the first electrode 1. In addition, a personal dosemeter and a neutron fluence monitor including the same are provided.

For dosimetry, a miniaturized nuclear imaging system with a solid-state detector is used to determine the activity and/or injected dose for a radiopharmaceutical. By being sized to scan the syringe or vial, the injected dose may be determined using the solid-state detector with greater accuracy than current dose calibrators and with less frequent use of a calibrated or standardized source. This miniaturized nuclear imaging system reconstructs activity in a same way as the nuclear imaging system scanning a patient, so may be used to calibrate the dose model. A tissue mimicking object with a solid-state dosimeter measures dose from the radiopharmaceutical, which dose is used to calibrate the dose model.

A radiation detection device includes a non-volatile memory chip including a plurality of stacked memory cells, and a controller configured to detect gamma rays incident on the non-volatile memory chip during a gamma ray detection window according to a data inversion or a threshold voltage change of at least some of the memory cells in the non-volatile memory chip during the gamma ray detection window.

The invention concerns an X-ray sensing detector assembly, wherein the detector assembly comprises: at least one primary X-ray sensing member; and an X-ray blocking detector housing surrounding the at least one primary X-ray sensing member, wherein a first, upper side of the detector housing is provided with an X-ray window allowing passage of X-rays into the detector housing so as to allow X-rays directed towards the first, upper side of the detector housing to pass through the X-ray window and interact with the at least one primary X-ray sensing member. The detector assembly is provided with at least one secondary X-ray sensing member arranged outside of the detector housing, wherein an X-ray blocking element is arranged on an upper side of the secondary X-ray sensing member so as to prevent that the secondary X-ray sensing member is exposed to X-rays directed towards the first, upper side of the detector housing.

Low-power, dual sensitivity thin oxide FG-MOSFET sensors in RF-CMOS technology for a wireless X-ray dosimeter chip, methods for radiation measurement and for charging and discharging the sensors are described. The FG-MOSFET sensor from a 0.13 μm (RF-CMOS process, includes a thin oxide layer having a device region, a source and a drain associated with the device well region, separated by a channel region, a floating gate extending over the channel region, and a floating gate extension extending over the thin oxide layer adjacent to the device well region. In a matched sensor pair for dual sensitivity radiation measurement, the floating gate and the floating gate extension of a FG-MOSFET higher sensitivity sensor are without a salicide layer or a silicide layer formed thereon and the floating gate and the floating gate extension of a FG-MOSFET lower sensitivity sensor have a salicide layer or a silicide layer formed thereon.

An organic semiconductor detector for detecting radiation has an organic conducting active region, an output electrode and a field effect semiconductor device. The field effect semiconductor device has a biasing voltage electrode and a gate electrode. The organic conducting active region is connected on one side to the field effect semiconductor device and is connected on another side to the output electrode. The organic semiconductor detector has an option switching circuitry having a field effect semiconductor device and resistance.

A radiation imaging apparatus comprises an imaging unit including an effective region including pixels for generating a radiation image based on irradiated radiation and a receptor field region including pixels for measuring a dose of the radiation, and a control unit configured to output a signal for controlling irradiation of the radiation by comparing the measured dose with a threshold. An effective region index representing the effective region and a receptor field index representing the receptor field region are identifiably formed on a radiation incident surface of the imaging unit.

For calibration of internal dose in nuclear imaging, the dose model used for estimating internal dose in a patient is calibrated. One or more values of the dose model (e.g., a physics simulation, dose kernels, or a transport model) are set based on measured dose. The dose may be measured relative to specific tissues and/or isotopes, providing for tracer and tissue specific calibration. For example, dose from the tracer to be injected into the patient is estimated from emissions as well as measured by a dosimeter in a tissue mimicking tissue mimicking object. These doses are used to calibrate the dose model, which calibrated dose model is then used to determine internal dose for the patient.