Disclosed herein is a method comprising: forming a first electrically conductive layer on a first surface of a substrate of semiconductor, wherein the first electrically conductive layer is in electrical contact with the semiconductor; bonding, at the first electrically conductive layer, a support wafer to the substrate of semiconductor; thinning the substrate of semiconductor.

A data processing apparatus according to an embodiment includes acquisition circuitry and specification circuitry. The acquisition circuitry is configured to acquire a detector signal containing a first component that is based on Cherenkov light and a second component that is based on scintillation light. The specification circuitry is configured to specify timing information about generation of the detector signal by curve fitting to the first component.

The present invention relates to a radiation detector (100) comprising: i) a substrate (110); ii) a sensor, which is coupled to the substrate, the sensor comprising a first array (120) of sensor pixels, a second array (130) of signal read-out elements, and an electronic circuitry which is configured to provide image data based on signals received from the signal read-out elements; iii) a transducer, which is coupled to the substrate and to the sensor, the transducer comprising a third array (140) of subpixels, wherein at least two subpixels are assigned to one sensor pixel; wherein the second array of signal read-out elements and the third array of subpixels correspond to each other; wherein each of the subpixels comprises a radiation conversion material.

A radiation detection device includes a detection element including a substrate having a first surface and a second surface, a first electrode on the first surface, a second electrode adjacent to the first electrode in a first direction, a third electrode adjacent to the first electrode in a second direction; a fourth electrode adjacent to the third electrode in the first direction and adjacent to the second electrode in the second direction and a fifth electrode on the first surface and between the first and second electrode, between the first and third electrode, between the second and fourth electrode, and between the third and fourth electrode; a wiring layer on the second surface and including a first wiring, a second wiring, a third wiring, and a fourth wiring; and a circuit element opposite to the wiring layer and connected to the first to fourth wiring.

A radiation detection device includes a non-volatile memory chip including a plurality of stacked memory cells, and a controller configured to detect gamma rays incident on the non-volatile memory chip during a gamma ray detection window according to a data inversion or a threshold voltage change of at least some of the memory cells in the non-volatile memory chip during the gamma ray detection window.

The invention concerns an X-ray sensing detector assembly, wherein the detector assembly comprises: at least one primary X-ray sensing member; and an X-ray blocking detector housing surrounding the at least one primary X-ray sensing member, wherein a first, upper side of the detector housing is provided with an X-ray window allowing passage of X-rays into the detector housing so as to allow X-rays directed towards the first, upper side of the detector housing to pass through the X-ray window and interact with the at least one primary X-ray sensing member. The detector assembly is provided with at least one secondary X-ray sensing member arranged outside of the detector housing, wherein an X-ray blocking element is arranged on an upper side of the secondary X-ray sensing member so as to prevent that the secondary X-ray sensing member is exposed to X-rays directed towards the first, upper side of the detector housing.

A multi-layer X-ray detector comprises a first X-ray converter, a first sensor, a second X-ray converter, a second sensor, and an internal anti-scatter device. The first sensor is located at a first sensor layer and is configured to detect radiation emitted from the first X-ray converter. The second sensor is located at a second sensor layer and is configured to detect radiation emitted from the second X-ray converter. The first X-ray converter and the first sensor form a first detector pair, and the second X-ray converter and the second sensor form a second detector pair. The internal anti-scatter device comprises a plurality of X-ray absorbing septa walls and is located between the first detector pair and the second detector pair. No structure of the internal anti-scatter device is located within either layer of the first detector pair, and no structure of the anti-scatter device is located within either layer of the second detector pair. The plurality of septa walls comprises a plurality of first septa walls substantially parallel to each other, and wherein a spacing between the first septa walls in a first direction is equal to an integer multiple n of detector pixel pitch of the first sensor and/or of the second sensor in the first direction, wherein n = 2, 3, 4, ... N.

Provided is a CZT semiconductor activity meter and an activity measuring device, which relate to the field of medical apparatus and instruments. The CZT semiconductor activity meter includes a shell, a CZT probe, a package substrate and a processing module, wherein the CZT probe is arranged on an end of the shell, the package substrate is arranged at the middle part of the shell and abuts against an inner wall of the shell, the CZT probe is connected to one side of the package substrate, the other side of the package substrate and the inner wall of the shell together form a package inner cavity, and the processing module is accommodated in the package inner cavity and connected to the package substrate. The CZT semiconductor activity meter has a small volume, is convenient to operate, does not require manual control during detection, and can be used at room temperature.

The present disclosure provides a gamma ray imaging device and an imaging method, where the imaging device includes a plurality of separate detectors. The plurality of separate detectors are provided at an appropriate spatial position, in an appropriate arrangement manner and are of an appropriate detector material, such that when rays emitted from different positions in an imaging area reach at least one of the plurality of separate detectors, at least one of the thicknesses of the detectors, the materials of the detectors, and the numbers of the detectors though which the rays pass are different, thereby achieving the effect of determining the directions of rays.

A semiconductor device includes n semiconductor chips stacked via electrical contacting means in the silicon substrate thickness direction, n being an integer larger than 2, a side face of the stacked semiconductor device in the substrate thickness direction being covered by a non-conductive layer. The shape of the side face with respect to a plan view of the stacked semiconductor device may be one of curved, convex, concave or circular.