A nuclear reaction detection device 100 includes a semiconductor memory 100 arranged in an environment in which radiation is incident, a position information storage unit 210 that stores spatial position information of a semiconductor element in the semiconductor memory 100, a bit position specifying unit 220 that detects that an SEU (Single Event Upset) has occurred in the semiconductor element included in the semiconductor memory 100, and specifies the semiconductor element in which the SEU has occurred, and a position calculating unit 230 that calculates a spatial position in which the SEU has occurred, based on the specified semiconductor element and the spatial position information.

Devices, systems, and methods of using one or more memristors as a radiation sensor are enabled. A memristor can be attractive as a sensor due to its passive low power characteristics. Medical and environment monitoring are contemplated use cases. Sensing radiation as part of a security system (at an airport for example) and screening food for radiation exposure are also possible uses. The memristor as a radiation sensor may possibly provide an inexpensive and easy alternative to personal thermoluminescent dosimeters (TLD). Memristor devices with high current and low power operation may be attached with wearable plastic substrates. An example device includes two metal strips with a 50 μm thick layer of TiO.sub.2 memristor material. The device may be made large relative to traditional memristors which are nanometers in scale but its increased thickness can significantly increase the probability of radiation interaction with the memristor material.

A semiconductor memory device includes a first data input/output (I/O) pad, an X-ray detector and a second data I/O pad. The first data I/O pad receives a test signal. The X-ray detector is connected to the first data I/O pad, includes a bipolar junction transistor (BJT) in which a voltage between an input end and an output end changes according to a cumulative X-ray dosage to the semiconductor memory device, and generates a test result signal indicating the voltage between the input and output ends of the BJT based on the test signal. The second data I/O pad is connected to the X-ray detector and outputs the test result signal.

A digital neutron and photon track dosimeter based on three-dimensional Not-And (3D NAND) flash memory may be provided. A plurality of logical addresses respectively associated with a plurality of cells in a 3D NAND flash memory that have been flipped from a first charge state to a second charge state may be determined. Next, the plurality of logical addresses may be converted to a plurality of physical addresses associated with the plurality of cells in the 3D NAND flash memory that have been flipped from the first charge state to the second charge state by radiation. Then a radiation dose proportional to number and plurality of tracks within the plurality of cells associated with the plurality of physical address may be determined.

Disclosed herein is a radiation detector, comprising: a radiation absorption layer configured to absorb a radiation; a plurality of counters each associated with a bin and configured to register a number of particles of the radiation particles absorbed by the detector; a memory comprising a plurality of units, which can be dynamically allocated to the counters.

Apparatuses and methods using current-starved ring oscillator biased by floating gate transistors with a variety of applications including as a power-free radiation detector or silicon age determination or odometer system.

Devices, systems, and methods of using one or more memristors as a radiation sensor are enabled. A memristor can be attractive as a sensor due to its passive low power characteristics. Medical and environment monitoring are contemplated use cases. Sensing radiation as part of a security system (at an airport for example) and screening food for radiation exposure are also possible uses. The memristor as a radiation sensor may possibly provide an inexpensive and easy alternative to personal thermoluminescent dosimeters (TLD). Memristor devices with high current and low power operation may be attached with wearable plastic substrates. An example device includes two metal strips with a 50 m thick layer of TiO.sub.2 memristor material. The device may be made large relative to traditional memristors which are nanometers in scale but its increased thickness can significantly increase the probability of radiation interaction with the memristor material.

A semiconductor memory device includes a first data input/output (I/O) pad, an X-ray detector and a second data I/O pad. The first data I/O pad receives a test signal. The X-ray detector is connected to the first data I/O pad, includes a bipolar junction transistor (BJT) in which a voltage between an input end and an output end changes according to a cumulative X-ray dosage to the semiconductor memory device, and generates a test result signal indicating the voltage between the input and output ends of the BJT based on the test signal. The second data I/O pad is connected to the X-ray detector and outputs the test result signal.

A radiation detection device includes a non-volatile memory chip including a plurality of stacked memory cells, and a controller configured to detect gamma rays incident on the non-volatile memory chip during a gamma ray detection window according to a data inversion or a threshold voltage change of at least some of the memory cells in the non-volatile memory chip during the gamma ray detection window.

Apparatuses and methods using current-starved ring oscillator biased by floating gate transistors with a variety of applications including as a power-free radiation detector or silicon age determination or odometer system.