A wide band gap semiconductor NAND based neutron detection system includes a semiconductor layer comprising a wide band gap material with a neutron absorber material in the wide band gap material, and the semiconductor layer is the only layer of the wide band gap semiconductor NAND based neutron detection system fabricated with the neutron absorber material.

Devices, systems, and methods of using one or more memristors as a radiation sensor are enabled. A memristor can be attractive as a sensor due to its passive low power characteristics. Medical and environment monitoring are contemplated use cases. Sensing radiation as part of a security system (at an airport for example) and screening food for radiation exposure are also possible uses. The memristor as a radiation sensor may possibly provide an inexpensive and easy alternative to personal thermoluminescent dosimeters (TLD). Memristor devices with high current and low power operation may be attached with wearable plastic substrates. An example device includes two metal strips with a 50 μm thick layer of TiO.sub.2 memristor material. The device may be made large relative to traditional memristors which are nanometers in scale but its increased thickness can significantly increase the probability of radiation interaction with the memristor material.

A radiation detection device includes a non-volatile memory chip including a plurality of stacked memory cells, and a controller configured to detect gamma rays incident on the non-volatile memory chip during a gamma ray detection window according to a data inversion or a threshold voltage change of at least some of the memory cells in the non-volatile memory chip during the gamma ray detection window.

A radiation imaging apparatus comprises an imaging unit including an effective region including pixels for generating a radiation image based on irradiated radiation and a receptor field region including pixels for measuring a dose of the radiation, and a control unit configured to output a signal for controlling irradiation of the radiation by comparing the measured dose with a threshold. An effective region index representing the effective region and a receptor field index representing the receptor field region are identifiably formed on a radiation incident surface of the imaging unit.

A system for detecting radiation using computing devices.

A wide band gap semiconductor NAND based neutron detection system includes a semiconductor layer comprising a wide band gap material with a neutron absorber material in the wide band gap material, and the semiconductor layer is the only layer of the wide band gap semiconductor NAND based neutron detection system fabricated with the neutron absorber material.

Devices, systems, and methods of using one or more memristors as a radiation sensor are enabled. A memristor can be attractive as a sensor due to its passive low power characteristics. Medical and environment monitoring are contemplated use cases. Sensing radiation as part of a security system (at an airport for example) and screening food for radiation exposure are also possible uses. The memristor as a radiation sensor may possibly provide an inexpensive and easy alternative to personal thermoluminescent dosimeters (TLD). Memristor devices with high current and low power operation may be attached with wearable plastic substrates. An example device includes two metal strips with a 50 μm thick layer of TiO.sub.2 memristor material. The device may be made large relative to traditional memristors which are nanometers in scale but its increased thickness can significantly increase the probability of radiation interaction with the memristor material.

A nuclear reaction detection device 100 includes a semiconductor memory 100 arranged in an environment in which radiation is incident, a position information storage unit 210 that stores spatial position information of a semiconductor element in the semiconductor memory 100, a bit position specifying unit 220 that detects that an SEU (Single Event Upset) has occurred in the semiconductor element included in the semiconductor memory 100, and specifies the semiconductor element in which the SEU has occurred, and a position calculating unit 230 that calculates a spatial position in which the SEU has occurred, based on the specified semiconductor element and the spatial position information.

A radiation imaging apparatus includes a detection unit that detects radiation applied by a radiation generating apparatus, an automatic exposure control unit that determines whether to stop application of radiation based on an accumulated dose of the detected radiation and to notify the radiation generating apparatus of an instruction to stop the application of radiation in a case where it is determined to stop the application of radiation, a plurality of memories, and a memory control unit that stores, in a first memory from among the plurality of memories, data to be used when the automatic exposure control unit makes the determination.

A nuclear reaction detection device includes an FPGA (Field Programmable Gate Array) 100 which is arranged in an environment in which particle radiation is incident, and includes a user circuit 101 configured to output a value different from that in a normal state, if an SEU (Single Event Upset) occurs in a semiconductor element included in the FPGA, and an SEF detection unit 210 which detects that an abnormal operation (SEF) has occurred in the user circuit based on the output value from the user circuit 101 of the FPGA 100.