The present technology relates to a photoelectric conversion element, a measuring method of the same, a solid-state imaging device, an electronic device, and a solar cell capable of further improving a quantum efficiency in a photoelectric conversion element using a photoelectric conversion layer including an organic semiconductor material. The photoelectric conversion element includes two electrodes forming a positive electrode (11) and a negative electrode (14), at least one charge blocking layer (13, 15) arranged between the two electrodes, and a photoelectric conversion layer (12) arranged between the two electrodes. The at least one charge blocking layer is an electron blocking layer (13) or a hole blocking layer (15), and a potential of the charge blocking layer is bent. The present technology is applied to, for example, a solid-state imaging device, a solar cell, and the like having a photoelectric conversion element.

A mask for use in compressed sensing of incoming radiation includes a material that modulates an intensity of incoming radiation, a plurality of mask aperture regions, and one or more axes of rotational symmetry with respect to the mask aperture regions. Each mask aperture region includes at least one mask aperture that allows a higher transmission of the incoming radiation relative to other portions of the mask aperture region. The relative transmission sufficient to allow a reconstruction of compressed sensing measurements and has a shape that provides a symmetry under rotation about the one or more axes of rotational symmetry. A mutual coherence of a sensing matrix generated by a rotation of the plurality of mask aperture regions is less than one. An imaging system for compressed sensing of incoming radiation including such a mask is also provided.

An in-core detector configured to measure a power distribution in a nuclear reactor is disclosed herein. The in-core detector includes a housing configured to be placed within a predetermined location of the nuclear reactor and a plurality of a gamma detectors. Each gamma detector of the plurality of gamma detectors includes a Schottky diode including an active semiconductor region and a Schottky contact, an Ohmic contact, a photoelectron source material configured to transfer electrons to the active region upon contact with gamma radiation, and a first and second lead. The plurality of gamma detectors are positioned within the housing such that each gamma detector of the plurality of gamma detectors is radially offset relative to an adjacent gamma detector of the plurality of gamma detectors, such that the first and second leads of each gamma detector are offset relative to the first and second leads of the adjacent gamma detector.

There is provided a radiation detection apparatus capable of effectively discriminating between noise and X-ray signal. The radiation detection apparatus includes a detector for detecting radiation and producing a detector output signal, a first differential filter having a time constant and operative to differentiate and convert the detector output signal into a first pulsed signal, a second differential filter having a time constant greater than that of the first differential filter and operative to differentiate and convert the detector output signal into a second pulsed signal, and a noise detection section for detecting noise based on the difference in timing between peaks of the first and second pulsed signals.

A circuit arrangement for charge integration may include an input for applying a signal representing charge pulses, an output for providing an integrated signal, and an integrating circuit connected between the input and the output, comprising a resistive circuit and a capacitor and having an RC time constant which is a function of the resistive circuit and the capacitor. The circuit arrangement may include a feedback control circuit connected at its input, to the output of the circuit arrangement and providing, at its output, a control signal, where at least one of the resistive circuit and the capacitor has a variable value based on the control signal.

A detector includes a substrate including a matrix of aramid nanofibers, a distribution of nanoparticles across the matrix of aramid nanofibers, and a plurality of organic capping ligands. Each organic capping ligand of the plurality of organic capping ligands bonds a respective nanoparticle of the plurality of nanoparticles to a respective aramid nanofiber of the matrix of aramid nanofibers. The detector further includes first and second electrodes disposed along opposite sides of the substrate to capture charges generated by photons or particles incident upon the detector. Each nanoparticle of the plurality of nanoparticles has a semiconductor composition.

The present invention relates to a detector (22′) for detecting ionizing radiation, comprising: a directly converting semi-conductor layer (36) for producing charge carriers in response to incident ionizing radiation; and a plurality of electrodes (34) corresponding to pixels for registering the charge carriers and generate a signal corresponding to registered charge carriers; wherein an electrode of the plurality of electrodes (34) is structured to two-dimensionally intertwine with at least two adjacent electrodes to register the charge carriers by said electrode and by at least one adjacent electrode. The present invention further relates to a detection method and to an imaging apparatus.

A method for photon counting for pixels in a pixelated detector is disclosed, wherein for each of the pixels, one or more neighbouring pixels are defined. The method comprises receiving a charge in one or more of the pixels and comparing for each of the pixels the charge with a trigger threshold. If the charge in a pixel is above the trigger threshold, the charge is registered in the pixel after a registration delay, wherein the registration delay is dependent on the level of the charge received in the pixel in such a way that a registration delay decreases with increasing charge. A counter for a pixel is incremented when the charge is registered and an increment of a counter of the neighbouring pixels is inhibited. Pixelated semiconductor detectors are also disclosed.

This application discloses a method and an apparatus for processing a nuclear energy spectrum. The apparatus includes: a detector, a nuclear pulse processing module, and a nuclear energy spectrum processing module; the detector is configured to detect nuclear radiation and convert the nuclear radiation into nuclear pulse signals with corresponding amplitudes; the nuclear pulse processing module is configured to shape the nuclear pulse signals into narrow pulses, and perform amplitude analysis on the narrow pulses to generate the nuclear energy spectrum; the nuclear energy spectrum processing module is configured to reduce a value of an energy resolution of the nuclear energy spectrum to obtain the nuclear energy spectrum with the energy resolution of the reduced value.

A system for measuring gamma spectroscopy of a neutron irradiated material includes a plurality of semiconductor sensors. Each of the semiconductor sensors includes a gamma ray receiving surface disposed above a Schottky layer in contact with an n-doped active layer. The receiving surface is configured to emit electrons upon irradiation by gamma rays. The receiving surface contacts an adjustable telescoping mount configured to adjust the distance between the receiving surface and the Schottky layer. The n-doped layer is fabricated to have a thickness designed to pass through electrons having greater than a defined energy. The combination of adjustable receiving surface and active layer thickness define a minimum and maximum energy response of each of the sensors. Multiple sensors may be integrated in an array in which each sensor has its own energy response. An array of such sensors can measure the gamma spectrum of a material irradiated with neutrons.