The present disclosure provides a neutral atom imaging unit, a neutral atom imager, a neutral atom imaging method, and a space detection system. The neutral atom imaging unit includes at least one set of detection units, the at least one set of detection units includes: at least one semiconductor detector line array, each semiconductor detector line array includes a semiconductor detector strip composed of a plurality of semiconductor detectors; and at least one modulation grid. The modulation grid includes a slit and a slat forming the slit; the modulation grid includes a plurality of grid periods, each of the grid periods includes n slits, the width of the semiconductor detector strip is d, and the width (w.sub.i) of the i-th slit of the modulation grid satisfies the following relationship: $w_i=\frac{n}{i}\times d.$

The present disclosure provides a neutral atom imaging unit, a neutral atom imager, a neutral atom imaging method, and a space detection system. The neutral atom imaging unit includes at least one set of detection units, the at least one set of detection units includes: at least one semiconductor detector line array, each semiconductor detector line array includes a semiconductor detector strip composed of a plurality of semiconductor detectors; and at least one modulation grid. The modulation grid includes a slit and a slat forming the slit; the modulation grid includes a plurality of grid periods, each of the grid periods includes n slits, the width of the semiconductor detector strip is d, and the width (w.sub.i) of the i-th slit of the modulation grid satisfies the following relationship: $w_i=\frac{n}{i}\times d.$

According to one embodiment, a radiation detector includes a first member including a scintillator layer, an organic member including an organic semiconductor layer, and a first conductive layer. The first conductive layer includes a first conductive region and a second conductive region. A second direction from the first conductive region toward the second conductive region crosses a first direction from the organic member toward the first member. A first portion of the organic member is between the first conductive region and the second conductive region in the second direction.

According to one embodiment, a radiation detector includes a first member including a scintillator layer, an organic member including an organic semiconductor layer, and a first conductive layer. The first conductive layer includes a first conductive region and a second conductive region. A second direction from the first conductive region toward the second conductive region crosses a first direction from the organic member toward the first member. A first portion of the organic member is between the first conductive region and the second conductive region in the second direction.

A device for detecting neutrons with gamma discrimination and/or gamma radiation includes a first semiconductor layer, a second semiconductor layer, an electron separator layer between the first semiconductor device and the second semiconductor device, and a gadolinium-containing layer between the first semiconductor layer and the second semiconductor layer.

A device for detecting neutrons with gamma discrimination and/or gamma radiation includes a first semiconductor layer, a second semiconductor layer, an electron separator layer between the first semiconductor device and the second semiconductor device, and a gadolinium-containing layer between the first semiconductor layer and the second semiconductor layer.

A method for producing a device for detecting flux of neutrons with parameters in predetermined ranges, including: one phase of determining parameters, including: simulating penetration of a flux of incident neutrons with parameters in the predetermined ranges through a modelled stack including in succession and in order at least: one first electrode; one substrate including: a first layer; and a second layer; and one second electrode; and simulating at least one defect peak created in the first layer by vacancies and/or ionization of the particles generated by collisions between neutrons of the flux of incident neutrons and atoms of the second dopant species; and identifying depth of the defect peak closest the interface between the first and second layers of the modelled stack.

A method for producing a device for detecting flux of neutrons with parameters in predetermined ranges, including: one phase of determining parameters, including: simulating penetration of a flux of incident neutrons with parameters in the predetermined ranges through a modelled stack including in succession and in order at least: one first electrode; one substrate including: a first layer; and a second layer; and one second electrode; and simulating at least one defect peak created in the first layer by vacancies and/or ionization of the particles generated by collisions between neutrons of the flux of incident neutrons and atoms of the second dopant species; and identifying depth of the defect peak closest the interface between the first and second layers of the modelled stack.

Inorganic compounds having the formula LiMP.sub.2Q.sub.6, where M is Ga, In, Bi, Sb, As, Al, or a combination thereof, and Q is S and/or Se, are provided. Methods and devices for detecting incident neutrons and alpha-particles using the compounds are also provided. For thermal neutron detection applications, the compounds can be enriched with lithium-6 isotope (.sup.6Li) to enhance their neutron detecting capabilities.

Inorganic compounds having the formula LiMP.sub.2Q.sub.6, where M is Ga, In, Bi, Sb, As, Al, or a combination thereof, and Q is S and/or Se, are provided. Methods and devices for detecting incident neutrons and alpha-particles using the compounds are also provided. For thermal neutron detection applications, the compounds can be enriched with lithium-6 isotope (.sup.6Li) to enhance their neutron detecting capabilities.