Fast neutron detectors using nuclear reactions within semiconductor material, glass, or other material. Some versions used doped versions of the materials. Some versions use dopants selected from Ba, As, Br, C, Ce, Cl, Co, Cu, F, Ga, Ge, In, Cd, Te, Al, P, K, La, Mo, Nd, O, Os, Pr, S, Se, Si, Sn, Sr, Ti, TI, V, Zn, and Zr. Some versions have filters or coatings deposited on windows into the detector. Coatings are selected from titanium oxide, zinc oxide, tin oxide, copper indium gadolinium selenide, cadmium telluride, cadmium tin oxide, perovskite photovoltaic, Si, GaAs, AIP, Ge.

Fast neutron detectors using nuclear reactions within semiconductor material, glass, or other material. Some versions used doped versions of the materials. Some versions use dopants selected from Ba, As, Br, C, Ce, Cl, Co, Cu, F, Ga, Ge, In, Cd, Te, Al, P, K, La, Mo, Nd, O, Os, Pr, S, Se, Si, Sn, Sr, Ti, TI, V, Zn, and Zr. Some versions have filters or coatings deposited on windows into the detector. Coatings are selected from titanium oxide, zinc oxide, tin oxide, copper indium gadolinium selenide, cadmium telluride, cadmium tin oxide, perovskite photovoltaic, Si, GaAs, AIP, Ge.

A wide band gap semiconductor NAND based neutron detection system includes a semiconductor layer comprising a wide band gap material with a neutron absorber material in the wide band gap material, and the semiconductor layer is the only layer of the wide band gap semiconductor NAND based neutron detection system fabricated with the neutron absorber material.

A wide band gap semiconductor NAND based neutron detection system includes a semiconductor layer comprising a wide band gap material with a neutron absorber material in the wide band gap material, and the semiconductor layer is the only layer of the wide band gap semiconductor NAND based neutron detection system fabricated with the neutron absorber material.

A neutron beam detecting device according to the invention includes: a first solar cell-type detector that is provided with, on a surface thereof, a conversion film for converting neutrons into photons or any charged particle beam among alpha particles, protons, lithium nuclei, gamma rays or beta rays, and generates a current in response to incident radiation; a radiation detector that generates a current insensitive to neutrons as an output signal in response to the radiation incident; a current measuring device that detects, as signals, the current generated by the first solar cell-type detector and the current generated by the radiation detector in response to the incident radiation; and a flux calculating unit that compares the current signals from the detectors which are detected by the current measuring device. The flux calculating unit associates the detected current signals from the solar cell-type detector and the radiation detector with a relation between a flux of incident radiation of a predetermined type obtained in advance and the detected currents from the solar cell-type detector and the radiation detector, and calculates a flux of a neutron beam.

A neutron beam detecting device according to the invention includes: a first solar cell-type detector that is provided with, on a surface thereof, a conversion film for converting neutrons into photons or any charged particle beam among alpha particles, protons, lithium nuclei, gamma rays or beta rays, and generates a current in response to incident radiation; a radiation detector that generates a current insensitive to neutrons as an output signal in response to the radiation incident; a current measuring device that detects, as signals, the current generated by the first solar cell-type detector and the current generated by the radiation detector in response to the incident radiation; and a flux calculating unit that compares the current signals from the detectors which are detected by the current measuring device. The flux calculating unit associates the detected current signals from the solar cell-type detector and the radiation detector with a relation between a flux of incident radiation of a predetermined type obtained in advance and the detected currents from the solar cell-type detector and the radiation detector, and calculates a flux of a neutron beam.

A neutron detector having high sensitivity of detection for low energy neutrons is provided. The neutron detector 10 includes a detecting element including a Si semiconductor layer 2, a first electrode 1 formed on one main surface of the Si semiconductor layer 2 and a second electrode 4 formed on the other main surface of the Si semiconductor layer 2, in which the Si semiconductor layer 2 includes a P-type impurity region 2a in contact with the second electrode 4 and an N-type impurity region 2b in contact with the first electrode 1; and a radiator 8 arranged to face the first electrode 1. In addition, a personal dosemeter and a neutron fluence monitor including the same are provided.

A neutron detector having high sensitivity of detection for low energy neutrons is provided. The neutron detector 10 includes a detecting element including a Si semiconductor layer 2, a first electrode 1 formed on one main surface of the Si semiconductor layer 2 and a second electrode 4 formed on the other main surface of the Si semiconductor layer 2, in which the Si semiconductor layer 2 includes a P-type impurity region 2a in contact with the second electrode 4 and an N-type impurity region 2b in contact with the first electrode 1; and a radiator 8 arranged to face the first electrode 1. In addition, a personal dosemeter and a neutron fluence monitor including the same are provided.

Thermal neutron detectors and methods of fabricating the same are provided. A thermal neutron detector can use boron in both the neutron conversion layer and as a source for conformal doping in a semiconductor substrate. The neutron detector can be a micro-structured diode with cavities having a depth of 60 microns or less. The boron can be filled in the cavities and diffused into the semiconductor substrate via a diffusion annealing process.

Thermal neutron detectors and methods of fabricating the same are provided. A thermal neutron detector can use boron in both the neutron conversion layer and as a source for conformal doping in a semiconductor substrate. The neutron detector can be a micro-structured diode with cavities having a depth of 60 microns or less. The boron can be filled in the cavities and diffused into the semiconductor substrate via a diffusion annealing process.