A system for measuring thermal degradation of composites includes a cylindrical body; a bottom cover having a lower central aperture; an upper concave mirror facing the bottom cover with an upper central orifice concentric with a central axis of the body; a lower concave mirror facing the upper concave mirror with a lower central orifice concentric with the central axis; a source of actinic radiation between the upper concave mirror and the lower concave mirror on the central axis to direct actinic radiation through the lower central orifice and lower central aperture; and a camera with an image sensor positioned concentrically relative to the upper central orifice; wherein the bottom cover is adjustable relative to the cylindrical body to provide a focusing function for the image sensor by varying the distance from the lower central orifice and the upper reflective surface.

A method includes: producing a light beam made up of pulses having a wavelength in the deep ultraviolet range, each pulse having a first temporal coherence defined by a first temporal coherence length and each pulse being defined by a pulse duration; for one or more pulses, modulating the optical phase over the pulse duration of the pulse to produce a modified pulse having a second temporal coherence defined by a second temporal coherence length that is less than the first temporal coherence length of the pulse; forming a light beam of pulses at least from the modified pulses; and directing the formed light beam of pulses toward a substrate within a lithography exposure apparatus.

A displacement device for pivoting a mirror element with two degrees of freedom of pivoting includes an electrode structure including actuator electrodes. The actuator electrodes are comb electrodes. All actuator electrodes are arranged in a single plane. The actuator electrodes form a direct drive for pivoting the mirror element.

A laser apparatus may include a beam splitter configured to split a pulse laser beam into a first beam path and a second beam path, an optical sensor provided in the first beam path, an amplifier including an amplification region provided in the second beam path and being configured to amplify and emit the pulse laser beam incident thereon along the second beam path, a wavefront controller provided in the second beam path between the beam splitter and the amplifier, and a processor configured to receive an output signal from the optical sensor and transmit a control signal to the wavefront controller.

An illumination optical unit for EUV projection lithography illuminates an illumination field with illumination light from a light source. A first facet mirror of the illumination optical unit has a plurality of first facets for the reflective guidance of partial beams of a beam of the EUV illumination light. Disposed downstream of the first facet mirror is a second facet mirror with a plurality of second facets for further reflective guidance of the partial beams. As a result of this, the reflective beam guidance that the two facets predetermines object field illumination channels, by which the whole object field is illuminable by the illumination light in each case and to which exactly one first facet and exactly one second facet is assigned in each case.

Embodiments disclosed herein relate to a processing chamber having a lens disposed therein. In one embodiment, the processing chamber includes a chamber body, a substrate support assembly, a light source, and a lens. The chamber body defines an interior volume of the processing chamber. The interior volume has a first area and a second area. The substrate support assembly is disposed in the second area. The substrate support assembly is configured to support a substrate. The light source is disposed above the substrate support assembly in the first area. The lens is disposed between the light source and the substrate support assembly. The lens includes a plurality of features formed therein. The plurality of features is configured to preferentially direct light from the light source to an area of interest on the substrate when disposed on the substrate support assembly.

An extreme ultraviolet (EUV) collector inspection apparatus and method capable of precisely inspecting a contamination state of an EUV collector and EUV reflectance in accordance with the contamination state are provided. The EUV collector inspection apparatus includes a light source arranged in front of an EUV collector to be inspected and configured to output light in a visible light (VIS) band from UV rays, an optical device configured to output narrowband light from the light, and a camera configured to perform imaging from an UV band to a VIS band. An image by wavelength of the EUV collector is obtained by using the optical device and the camera and a contamination state of the EUV collector is inspected.

The invention provides a skin detection device using different detecting lights, such as white light or UV light. When white light is used, the user's original skin image is acquired, and further analyzed to determine the user's skin condition, such as pore size or dullness of spots. When UV light is used, it is determined whether there is metal remnant or acne on the user's skin. By using the skin detection device, various user skin conditions can be found to help the following cosmetic consultation.

Provided in the present invention is an adjustment and design method of an illumination system matched with multiple objective lenses in an extreme ultraviolet lithography machine; the illumination system to which the method is applied comprises a light source, a collection lens, a field compound eye, a pupil compound eye and a relay lens group; the method specifically comprises the steps: before a projection objective lens of an extreme ultraviolet lithography machine is replaced, calculating aperture angles of emergent ray of a relay lens A on a meridian plane and a sagittal plane by means of ray tracing; after the projection objective lens of the extreme ultraviolet lithography machine is replaced, taking out a central point of a exit pupil plane as an object point for ray tracing; adjusting inclination angles and positions of the relay lens A and a relay lens B, and adjusting inclination angles of central compound eye units of the pupil compound eye and the field compound eye, till an image plane of a current illumination system approximates to an arc-shaped image plane corresponding to the projection objective lens. By adjusting the illumination system on the basis of the adjustment method of the present invention, an illumination system matched with the projection objective lens system can be obtained, which dramatically reduces the cost of designing a projection lithography machine.

A diffusive ultraviolet illuminator is provided. The illuminator can include a reflective mirror and a set of ultraviolet radiation sources located within a proximity of the focus point of the reflective mirror. The ultraviolet radiation from the set of ultraviolet radiation sources is directed towards a reflective surface located adjacent to the illuminator. The reflective surface can diffusively reflect at least 30% the ultraviolet radiation and the diffusive ultraviolet radiation can be within at least 40% of Lambertian distribution. A set of optical elements can be located between the illuminator and the reflective surface in order to direct the ultraviolet radiation towards at least 50% of the reflective surface.