Photonic devices having a quantum well structure that includes a Group III-N material, and a Al.sub.1-xSc.sub.xN cladding layer disposed on the quantum well structure, where 0<x≤0.45, the Al.sub.1-xSc.sub.xN cladding layer having a lower refractive index than the index of refraction of the quantum well structure.

Provided is an optical isolator including a semiconductor substrate, an optical attenuator and an optical amplifier aligned with each other on the semiconductor substrate, an input optical waveguide connected to the optical attenuator, and an output optical waveguide connected to the optical amplifier, wherein a gain of the optical amplifier decreases based on an intensity of light incident on the optical amplifier increasing, wherein a first input light incident on the optical attenuator through the input optical waveguide is output as a first output light through the output optical waveguide, and a second input light incident on the optical amplifier through the output optical waveguide is output as a second output light through the input optical waveguide, and wherein when an intensity of the first input light and an intensity of the second input light are equal, an intensity of the first output light is greater than an intensity of the second output light.

A Group III-Nitride quantum well laser including a distributed Bragg reflector (DBR). In some embodiments, the DBR includes Scandium. In some embodiments, the DBR includes Al.sub.1-xSc.sub.xN, which may have 0<x≤0.45.

An optical waveguide (100) is disclosed, for guiding light in a photonic circuit comprising a layer of phase change material (101) for modulating the phase of the guided light. The phase change material (101) is switchable between at least a stable crystalline state and a stable amorphous state each with different refractive indexes. The phase change material (101) exhibits an extinction coefficient of less than 0.1 in both states for wavelengths greater than 1000 nm.

A method for forming at least one freestanding microstructure on a diamond crystal includes the step of removing material from the diamond crystal so as to form a structured surface, wherein the removing of the material includes creating at least two trenches, each trench having a bottom and two side walls and wherein adjacent side walls of the at least two trenches form side walls of the structured surface. The method also includes the steps of depositing at least one masking layer on the structured surface, removing at least a portion of the at least one masking layer from the bottom of each of the at least two trenches, removing additional material from the diamond crystal at least along the side walls so as to deepen the trenches, and undercutting the diamond crystal so as to form the freestanding microstructure.

An optical receiver including an ASIC, a light detector element, and a protective mask is disclosed. The light detector element is disposed on the ASIC and has a top surface oriented toward incident light, the top surface including a portion configured to receive the incident light and via which the incident light reaches an active area of the light detector element. The protective mask is placed over the ASIC so as to (i) cover, from the incident light, a portion of the ASIC, and (ii) provide an aperture that defines an optical path for the incident light through the protective mask to the portion of the top surface of the light detector element.

A method of forming a semiconductor structure includes: providing an initial substrate having a first region and a second region; forming a first substrate on the initial substrate; forming a first insulating layer on the first substrate; forming a second substrate on the first insulating layer; removing the second substrate in the second region to form a second insulating layer on the first insulating layer in the second region; and forming a plurality of passive devices on the second insulating layer in the second region and forming a plurality of active devices on the second substrate in the first region.

In a waveguide having a given Δ, a low-loss waveguide bend is realized while the curvature radius is kept small. In an optical waveguide in which a first waveguide and a second waveguide are connected, a clothoid tapered waveguide bend is inserted between the first waveguide and the second waveguide. In the clothoid tapered waveguide bend, the waveguide width continuously changes from a first waveguide width at a connection point of the first waveguide to a second waveguide width at a connection point of the second waveguide, the curvature radius continuously changes from a first curvature radius at the connection point of the first waveguide to a second curvature radius at the connection point of the second waveguide, the first waveguide width and the second waveguide width are different from each other, and the first curvature radius and the second curvature radius are different from each other.

Disclosed herein are configurations and methods to produce very low loss waveguide structures, which can be single-layer or multi-layer. These waveguide structures can be used as a sensing component of a small-footprint integrated optical gyroscope. By using pure fused silica substrates as both top and bottom cladding around a SiN waveguide core, the propagation loss can be well below 0.1 db/meter. Low-loss waveguide-based gyro coils may be patterned in the shape of a spiral (circular or rectangular or any other shape), that may be distributed among one or more of vertical planes to increase the length of the optical path while avoiding the increased loss caused by intersecting waveguides in the state-of-the-art designs. Low-loss adiabatic tapers may be used for a coil formed in a single layer where an output waveguide crosses the turns of the spiraling coil.

Structures for an edge coupler and methods of forming a structure for an edge coupler. The structure includes a waveguide core over a dielectric layer, and a back-end-of-line stack over the waveguide core and the dielectric layer. The back-end-of-line stack includes an interlayer dielectric layer, a side edge, a first feature, a second feature, and a third feature laterally arranged between the first feature and the second feature. The first feature, the second feature, and the third feature are positioned on the interlayer dielectric layer adjacent to the side edge, and the third feature has an overlapping relationship with a tapered section of the waveguide core.