A photonic structure is provided. The photonic structure includes a guiding region, a sensing region, and logic region. The guiding region has a first side and a second side opposite to the first side. The sensing region is disposed on the second side of the guiding region. The logic region is disposed on a side of the sensing region opposite to the guiding region. The guiding region, the sensing region, and the logic region are stacked along a vertical direction. A method for manufacturing the photonic structure is also provided.

A multilayer film includes a single-crystal silicon layer, a first layer containing Zr, a second layer containing ZrO.sub.2, and a third layer containing a perovskite oxide having an electrooptic effect. The first layer, the second layer, and the third layer are provided in this order above the single-crystal silicon layer, and the multilayer film is transparent to a wavelength to be used.

There is set forth herein a method including building a first photonics structure using a first wafer having a first substrate, wherein the building the first photonics structure includes integrally fabricating within a first photonics dielectric stack one or more photonics device, the one or more photonics device formed on the first substrate; building a second photonics structure using a second wafer having a second substrate, wherein the building the second photonics structure includes integrally fabricating within a second photonics dielectric stack a laser stack structure active region and one or more photonics device, the second photonics dielectric stack formed on the second substrate; and bonding the first photonics structure and the second photonics structure to define an optoelectrical system having the first photonics structure bonded the second photonics structure.

An optical sensing system comprising an optical fiber, a light source, a first interrogator and a second interrogator. The optical fiber includes one or more optical sensors. The light source is placed at a first end of the optical fiber and is configured to direct light towards the one or more optical sensors. The first interrogator is placed at the first end of the optical fiber. The second interrogator placed at a second, opposite end of the optical fiber. The first interrogator is configured to receive reflected light from the one or more optical sensors, and the second interrogator is configured to receive transmitted light from the one or more optical sensors.

A grating coupler integrated in a photonically-enabled circuit and a method for fabricating the same are disclosed herein. In some embodiments, the grating coupler includes a substrate comprising a silicon wafer, a first grating region etched into the substrate, wherein the first grating region comprises a first plurality of gratings having a first predetermined height, and a second grating region etched into the substrate, wherein the second grating region comprises a second plurality of gratings having a second predetermined height and wherein the first and second predetermined heights are not identical.

The invention relates to a process for fabricating an optoelectronic system (1) comprising an optical device (60) coupled to an integrated photonic circuit (20), comprising producing a lower waveguide (13.1) from the thin single-crystal-silicon layer (13) of a first SOI substrate (10), then joining a second SOI substrate (40) thereto and producing an intermediate waveguide (43.1) from the thin single-crystal-silicon layer (43) of the second SOI substrate (40).

A photonic integrated circuit chip includes vertical grating couplers defined in a first layer. Second insulating layers overlie the vertical grating coupler and an interconnection structure with metal levels is embedded in the second insulating layers. A cavity extends in depth through the second insulating layers all the way to an intermediate level between the couplers and the metal level closest to the couplers. The cavity has lateral dimensions such that the cavity is capable of receiving a block for holding an array of optical fibers intended to be optically coupled to the couplers.

A signal transmission structure configured to transmit signals between an image module and an application processor is provided. An optoelectronic composite board including a circuit board and an optical waveguide module, and is configured to simultaneously transmit digital signals between the image module and the application processor in the form of electric and optical signals. By using the signal transmission structure having both electric and optical signals, transferring of a larger quantity of signals is enabled and transmission of digital data is accelerated.

An optical device including a waveguide grating is disclosed. The optical device may be used as an optical cavity for a laser device, for instance, of an integrated laser device for light detection and ranging (Lidar) applications. In one aspect, the optical device includes a waveguide grating for guiding light, a heating layer provided beneath or above the waveguide grating, and two or more contacts for passing a current through the heating layer, to generate heat in the heating layer. The heating layer is thermally coupled to the waveguide grating and is optically decoupled from the waveguide grating.

Examples described herein relate to an optical device with an integrated light-emitting structure to generate light and a waveguide integrated capacitor to monitor light. The light-emitting structure may emit light upon the application of electricity to the optical device. The waveguide integrated capacitor may be formed under the light-emitting structure to monitor the light emitted by the light-emitting structure. The waveguide integrated capacitor includes a waveguide region carrying at least a portion of the light. The waveguide region includes one or more photon absorption sites causing the generation of free charge carriers relative to an intensity of the light confined in the waveguide region resulting in a change in the conductance of the waveguide region.