A cavity substrate may have a directional optoelectronic transmission channel. The cavity substrate includes a support frame, a first dielectric layer on a first surface of the support frame, and a second dielectric layer on a second surface of the support frame. The support frame, the first dielectric layer and the second dielectric layer constitute a closed cavity having an opening on one side in the length direction of the substrate, a first circuit layer is arranged on the inner surface of the first dielectric layer facing the cavity, an electrode connected with an optical communication device is arranged on the first circuit layer, the electrode is electrically conducted with the first circuit layer, a second circuit layer is arranged on the outer surfaces of the first dielectric layer and the second dielectric layer, and the first circuit layer and the second circuit layer are communicated through a via column.

A photonic integrated device includes a first waveguide and a second waveguide. The first and second waveguides are mutually coupled at a junction region the includes a bulge region.

An optical waveguide includes a first waveguide core, a second waveguide core, a first subwavelength multilayer cladding, a second subwavelength multilayer cladding and a third subwavelength multilayer cladding. The first waveguide core and the second waveguide core have a width (w) and a height (h). The first waveguide core is disposed between the first subwavelength multilayer cladding and the second subwavelength multilayer cladding. The second waveguide core is disposed between the second subwavelength multilayer cladding and the third subwavelength multilayer cladding. Each subwavelength multilayer cladding has a number (TV) of alternating subwavelength ridges having a periodicy (A) and a filling fraction (p). A total coupling coefficient (|/c|) of the first waveguide core and the second waveguide core is from 10 to 0.

Embodiments include an optical apparatus and associated method of assembling. The optical apparatus comprises a substrate defining a first surface and a channel formed relative thereto, the substrate including one or more waveguides extending to a sidewall partly defining the channel, a plurality of first electrical contacts formed on the first surface. The optical apparatus further comprises a carrier member defining a second surface and at least a third surface, the second surface coupled with the first surface of the substrate. The optical apparatus further at least one optical component coupled with the second surface and at least partly disposed within the channel, wherein the at least one optical component is optically coupled with the one or more waveguides and electrically connected with the first electrical contacts via a plurality of second electrical contacts at the third surface of the carrier member.

A self-lit display panel includes a photonic integrated circuit payer including an array of waveguides and an array of out-couplers for out-coupling portions of the illuminating light through pixels of the panel. The self-lit display panel may include a transparent electronic circuitry layer backlit by the photonic integrated circuit layer; the two layers may be on a same substrate or on opposed substrates defining a cell filled with an electro-active material. The configuration allows for chief ray engineering, zonal illuminating, and separate illumination with red, green, and blue illuminating light.

A method for providing an electric waveform at a cryogenic temperatures includes providing an optical signal, which comprises an optical waveform, guiding the optical signal into a cryogenic chamber, and converting the optical waveform of the optical signal into an electric waveform inside the cryogenic chamber.

A photonic structure can include in one aspect one or more waveguides formed by patterning of waveguiding material adapted to propagate light energy. Such waveguiding material may include one or more of silicon (single-, poly-, or non-crystalline) and silicon nitride.

A light receiving device includes, on a substrate, a Si waveguide core provided in a dielectric layer, a first i-type waveguide clad, an i-type core layer, a second i-type waveguide clad, p-type layers disposed on one side of a side surface of a layered structure in a light waveguide direction, the layered structure including the first i-type waveguide clad, the i-type core layer, and the second i-type waveguide clad, n-type layers disposed on the other side, and an electrode on a surface of each of the n-type layers. A width of the Si waveguide core is set to be able to suppress absorption of light in a vicinity of an input edge of the i-type core layer.

An embodiment device includes: a first dielectric layer; a first photonic die and a second photonic die disposed adjacent a first side of the first dielectric layer; a waveguide optically coupling the first photonic die to the second photonic die, the waveguide being disposed between the first dielectric layer and the first photonic die, and between the first dielectric layer and the second photonic die; a first integrated circuit die and a second integrated circuit die disposed adjacent the first side of the first dielectric layer; conductive features extending through the first dielectric layer and along a second side of the first dielectric layer, the conductive features electrically coupling the first photonic die to the first integrated circuit die, the conductive features electrically coupling the second photonic die to the second integrated circuit die; and a second dielectric layer disposed adjacent the second side of the first dielectric layer.

Disclosed is a photonic structure and associated method. The structure includes a closed-curve waveguide having a first height, as measured from the top surface of an insulator layer, and an outer curved sidewall that extends essentially vertically the full first height (e.g., to minimize signal loss). The structure includes a closed-curve thermal coupler and a heating element. The closed-curve thermal coupler is thermally coupled to and laterally surrounded by the closed-curve waveguide and has a second height that is less than the first height. In some embodiments, the closed-curve waveguide and the closed-curve thermal coupler are continuous portions of the same semiconductor layer having different thicknesses. The heating element is thermally coupled to the closed-curve thermal coupler and thereby indirectly thermally coupled to the closed-curve waveguide. Thus, the heating element is usable for thermally tuning the closed-curve waveguide via the closed-curve thermal coupler to minimize any temperature-dependent resonance shift (TDRS).