Patent classifications
G02B2006/12121
Dual-polarization LiDAR systems and methods
A LiDAR system has a field of view and includes a polarization-based waveguide splitter. The splitter includes a first splitter port, a second splitter port and a common splitter port. A laser is optically coupled to the first splitter port via a single-polarization waveguide. An objective lens optically couples each optical emitter of an array of optical emitters to a respective unique portion of the field of view. An optical switching network is coupled via respective dual-polarization waveguides between the common splitter port and the array of optical emitters. An optical receiver is optically coupled to the second splitter port via a dual-polarization waveguide and is configured to receive light reflected from the field of view. A controller, coupled to the optical switching network, is configured to cause the optical switching network to route light from the laser to a sequence of the optical emitters according to a temporal pattern.
MODE FIELD ADAPTER FOR OPTICAL COUPLING OF WAVEGUIDES
A mode field adapter (MFA) is disclosed. The MFA is tapered and includes a passive core region and an active core region separated by a distance. Further, the passive core region includes first and second passive layers that are separated by another distance. The MFA is configured to receive an optical signal from a first waveguide, and alter, for transmission to a second waveguide, an optical mode of the optical signal. The optical mode is altered based on the distance between the first and second passive layers, the distance between the active and passive core regions, and the tapering of the MFA. The optical mode is altered such that an optical loss associated with the optical signal traversing from the first waveguide to the second waveguide by way of the MFA is within a tolerance limit.
Photonic devices
Photonic devices having a quantum well structure that includes a Group III-N material, and a Al.sub.1-xSc.sub.xN cladding layer disposed on the quantum well structure, where 0<x≤0.45, the Al.sub.1-xSc.sub.xN cladding layer having a lower refractive index than the index of refraction of the quantum well structure.
OPTICAL COMPONENT ALIGNMENT USING INVERTED CARRIER MEMBER
Embodiments include an optical apparatus and associated method of assembling. The optical apparatus comprises a substrate defining a first surface and a channel formed relative thereto, the substrate including one or more waveguides extending to a sidewall partly defining the channel, a plurality of first electrical contacts formed on the first surface. The optical apparatus further comprises a carrier member defining a second surface and at least a third surface, the second surface coupled with the first surface of the substrate. The optical apparatus further at least one optical component coupled with the second surface and at least partly disposed within the channel, wherein the at least one optical component is optically coupled with the one or more waveguides and electrically connected with the first electrical contacts via a plurality of second electrical contacts at the third surface of the carrier member.
Optical Channel Bandwidth Analyzer
A test apparatus has at least one optical source, a high-speed photodetector, a microcontroller or processor, and electrical circuitry to power and drive the optical source, high-speed photodetector, and microcontroller or processor. The apparatus measures the frequency response and optical path length of a multimode optical fiber under test, utilizes a reference VCSEL spatial spectral launch condition and modal-chromatic dispersion interaction data to estimate the channels total modal-chromatic bandwidth of the fiber under test, and computes and presents the estimated maximum data rate the fiber under test can support.
Optical fiber structures and methods for varying laser beam profile
In various embodiments, the beam parameter product and/or numerical aperture of a laser beam is adjusted utilizing a step-clad optical fiber having a central core, a first cladding, an annular core, and a second cladding.
SILICON PHOTONIC SMOKE DETECTOR
A chamberless smoke detector includes a source laser, a grating coupler, a transmitting optical phase array, a receiving optical phase array, and a processing unit.
Photonic devices
A Group III-Nitride quantum well laser including a distributed Bragg reflector (DBR). In some embodiments, the DBR includes Scandium. In some embodiments, the DBR includes Al.sub.1-xSc.sub.xN, which may have 0<x≤0.45.
Single-photon source device and single-photon source system including the same
Provided are a single-photon source device and a single-photon source system including same. The single-photon source device includes a substrate, a straight waveguide extending in a first direction on the substrate, a first coupling layer which is provided on the straight waveguide and has a first point defect, at least one first electrode which is adjacent to the first point defect and provided on the first coupling layer, a ring waveguide which is adjacent to the straight waveguide and provided on the substrate, and at least one second electrode provided on the ring waveguide.
Method for fabricating a heterostructure comprising active or passive elementary structure made of III-V material on the surface of a silicon-based substrate
A process for fabricating a heterostructure includes at least one elementary structure made of III-V material on the surface of a silicon-based substrate successively comprising: producing a first pattern having at least a first opening in a dielectric material on the surface of a first silicon-based substrate; a first operation for epitaxy of at least one III-V material so as to define at least one elementary base layer made of III-V material in the at least first opening; producing a second pattern in a dielectric material so as to define at least a second opening having an overlap with the elementary base layer; a second operation for epitaxy of at least one III-V material on the surface of at least the elementary base layer made of III-V material(s) so as to produce the at least elementary structure made of III-V material(s) having an outer face; an operation for transferring and assembling the at least photonic active elementary structure via its outer face, on an interface that may comprise passive elements and/or active elements, the interface being produced on the surface of a second silicon-based substrate; removing the first silicon-based substrate and the at least elementary base layer located on the elementary structure.