The disclosed subject matter relates to semiconductor devices for use in optoelectronic/photonic applications and integrated circuit (IC) chips. More particularly, the present disclosure relates to photonic devices having thermally conductive layers for the removal of heat from optoelectronic components in the photonic devices.

Integrated target waveguide devices and optical analytical systems comprising such devices are provided. The target devices include an optical coupler that is optically coupled to an integrated waveguide and that is configured to receive optical input from an optical source through free space, particularly through a low numerical aperture interface. The devices and systems are useful in the analysis of highly multiplexed optical reactions in large numbers at high densities, including biochemical reactions, such as nucleic acid sequencing reactions. The devices provide for the efficient and reliable coupling of optical excitation energy from an optical source to the optical reactions. Optical signals emitted from the reactions can thus be measured with high sensitivity and discrimination. The devices and systems are well suited for miniaturization and high throughput.

Silicon photonic integrated circuit (PIC) on a multi-zone semiconductor on insulator (SOI) substrate having at least a first zone and a second zone. Various optical devices of the PIC may be located above certain substrate zones that are most suitable. A first length of a photonic waveguide structure comprises the crystalline silicon and is within the first zone, while a second length of the waveguide structure is within the second zone. Within a first zone, the crystalline silicon layer is spaced apart from an underlying substrate material by a first thickness of dielectric material. Within the second zone, the crystalline silicon layer is spaced apart from the underlying substrate material by a second thickness of the dielectric material.

An optical waveguide package includes a substrate having a first surface, and an optical waveguide layer including a cladding located on the first surface and a core located in the cladding. The substrate includes a first portion and a second portion being in contact with the cladding. The second portion bonds to the cladding with a higher bonding strength than the first portion.

Techniques disclosed herein relate generally to photonic integrated circuits working at cryogenic temperatures. In one example, a device includes a substrate, a dielectric layer on the substrate, an optical waveguide in the dielectric layer, a superconducting circuit in the dielectric layer and coupled to the optical waveguide, and a micro-channel in the dielectric layer and adjacent to the superconducting circuit. The micro-channel is aligned with the superconducting circuit and is configured to conduct a liquid at a cryogenic temperature to locally cool the superconducting circuit.

An optical telescope may include an array of optical lenslets in a common plane, and optical waveguides extending from respective optical lenslets and each having a common optical path delay. Further, at least one optical star coupler may be downstream from the optical waveguides, and an optical detector may be downstream from the at least one optical star coupler and having an optical image formed thereon.

Thermal isolation elements are provided in wafer-bonded silicon photonics that include a photonic platform, including a heating element and an optical waveguide that are disposed between a first surface and a second surface (opposite to the first surface) of the photonic platform; a substrate, including a third surface and a fourth surface (opposite to the third surface); wherein the first surface of the photonic platform is bonded to the third surface of the substrate; and wherein a cavity is defined by a trench in one or more of: the first surface and extending towards, but not reaching, the second surface, and the third surface and extending towards, but not reaching, the fourth surface; wherein the cavity is filled with a gas of a known composition at a predefined pressure; and wherein the cavity is aligned with the optical waveguide and the heating element.

An optical transmission apparatus includes an emitter that emits an optical signal in accordance with a bias current, and a Mach-Zehnder optical modulator that optically modulates the optical signal in accordance with an electrical signal. The optical modulator includes a detector that detects a temperature inside the optical modulator, and a controller that, when detecting activation of a power supply, controls the temperature inside the optical modulator such that the temperature detected by the detector reaches a target temperature.

A semiconductor photonic package can include a laser module and a photonic integrated circuit (PIC), each having a different operating temperature. The two modules are placed on a common substrate allowing accurate optical alignment. In addition, a thermal barrier is integrated into the substrate between the laser module and the PIC to provide thermal stability, especially to the laser module. The substrate can include a housing with good electrical conductivity or an optical substrate and housing. The thermal barrier is integrated into the optical substrate, the housing, or both. The thermal barrier in the optical substrate can be a cutout that does not divide the optical substrate into two separate pieces.

A method for monitoring optical fiber temperature includes heating an optical fiber using a heat source, and measuring an infrared radiation level emitted by an optical fiber during heating of the optical fiber. The method further includes comparing the infrared radiation level to a radiation level setpoint for the optical fiber to determine a radiation level error value. The method further includes adjusting a power level setpoint of the heat source based on the radiation level error value.