An optical engine. In some embodiments, the optical engine includes an electronic interfacing component including: an upper surface having a plurality of conductors for forming a corresponding plurality of connections to a host board, a lower surface having a plurality of conductors for forming a corresponding plurality of connections to one or more optoelectronic elements, and a plurality of vias extending from the lower surface to the upper surface.

An electro-optical modulator is provided. The modulator comprises a first and a second optical waveguide, at least one first capacitance, via which a voltage can be applied to a light-guiding region of the first optical waveguide, at least one second capacitance, via which a voltage can be applied to a light-guiding region of the second optical waveguide, an electrically conductive region, via which the first and second capacitances are electrically connected to one another, and a feed line to the electrically conductive region, via which feed line a DC voltage can be applied to the electrically conductive region, wherein the feed line is constituted such that it represents an electrical resistance connected in parallel with the second capacitance, and a compensation resistance connected in parallel with the first capacitance and serving for reducing transients in a voltage profile on the first and second capacitances during the operation of the modulator.

A multilayer film includes a single-crystal silicon layer, a first layer containing Zr, a second layer containing ZrO.sub.2, and a third layer containing a perovskite oxide having an electrooptic effect. The first layer, the second layer, and the third layer are provided in this order above the single-crystal silicon layer, and the multilayer film is transparent to a wavelength to be used.

Photonic devices having a quantum well structure that includes a Group III-N material, and a Al.sub.1-xSc.sub.xN cladding layer disposed on the quantum well structure, where 0<x≤0.45, the Al.sub.1-xSc.sub.xN cladding layer having a lower refractive index than the index of refraction of the quantum well structure.

Disclosed are a micro-ring modulator and a method for manufacturing a micro-ring modulator. The micro-ring modulator includes at least one straight waveguide (10) and at least one surface plasmon polariton micro-ring resonator (20) coupled to the straight waveguide (10). The straight waveguide (10) is configured for transmitting an optical signal; and the surface plasmon polariton micro-ring resonator (20) is configured for modulating an intensity of an optical signal with a wavelength corresponding to the surface plasmon polariton micro-ring resonator (20).

Various embodiments of the present disclosure are directed towards an integrated chip including a waveguide and a heater structure. The waveguide is disposed on a substrate and comprises an active region that extends continuously along a first distance. The heater structure overlies the waveguide. The heater structure comprises a conductive structure over the active region and a vertical structure disposed between the conductive structure and the substrate. The vertical structure comprises a conductive upper vertical segment and a lower vertical segment. The conductive structure and the conductive upper vertical segment continuously laterally extend across a second distance that is greater than or equal to the first distance. The first distance is greater than a width of the conductive structure.

Provided is an optical phase shifter. The optical phase shifter includes: a slab waveguide in which a first slab region doped into a first conductivity type and a second slab region doped into a second conductivity type are arranged side by side to form a PN junction; and a rib waveguide disposed on the slab waveguide such that one side of the rib waveguide makes contact with the first slab region, and an opposite side of the rib waveguide makes contact with the second slab region, wherein the rib waveguide includes first to third rib waveguide layers that are sequentially stacked, the first and third rib waveguide layers include silicon (Si), and the second rib waveguide layer includes silicon-germanium (SiGe).

A Group III-Nitride quantum well laser including a distributed Bragg reflector (DBR). In some embodiments, the DBR includes Scandium. In some embodiments, the DBR includes Al.sub.1-xSc.sub.xN, which may have 0<x≤0.45.

A structure includes an optical interposer attached to a package substrate, wherein the optical interposer includes a silicon waveguide, a first photonic component optically coupled to the silicon waveguide, a second photonic component optically coupled to the silicon waveguide, and an interconnect structure extending over the silicon waveguide, over the first photonic component, and over the second photonic component, wherein the interconnect structure is electrically connected to the first photonic component and to the second photonic component, a first semiconductor device attached to the interconnect structure, wherein the first semiconductor device is electrically connected to the first photonic component through the interconnect structure, and a second semiconductor device attached to the interconnect structure, wherein the second semiconductor device is electrically connected to the second photonic component through the interconnect structure.

A thermally tunable waveguide including an optical waveguide and a heater is provided. The optical waveguide includes a phase shifter. The heater is disposed over the optical waveguide. The heater includes a heating portion, pad portions and tapered portions. The heating portion overlaps with the phase shifter of the optical waveguide. The pad portions are disposed aside of the heating portion. Each of the pad portions is connected to the heating portion through one of the tapered portions respectively.