An arrayed waveguide grating device includes an input coupler configured to receive a light signal and split the light signal into a plurality of output light signals. The device also includes a plurality of waveguides optically connected to the input coupler, each waveguide having a plurality of waveguide portions having respective sensitivities to variance in one or more parameters associated with operating of the optical arrayed grating device. Lengths of the respective portions are determined such that each waveguide applies a respective phase shift to the output light signal that propagates through the waveguide and the plurality of waveguides have at least substantially same change in phase shift with respective changes in the one or more parameters associated with operation of the device. An output coupler is optically connected to the plurality of waveguides to map respective light signals output from the plurality of waveguides to respective focal positions.

A wavelength demultiplexer includes a photonic circuit and a control circuit that adjusts wavelength characteristics of the photonic circuit. The photonic circuit converts two orthogonal polarized waves contained in the incident light into two same polarized waves, which are supplied to a first optical demultiplexing circuit and a second optical demultiplexing circuit provided in the photonic circuit and having the same configuration. The photonic circuit supplies a total output power of monitor lights extracted from the same positions in the first optical demultiplexing circuit and the second optical demultiplexing circuit to the control circuit. The control circuit controls a first wavelength characteristic of the first optical demultiplexing circuit and a second wavelength characteristic of the second optical demultiplexing circuit based on the total output power of the monitor lights.

Electrical test of optical components via metal-insulator-semiconductor capacitor structures is provided via a plurality of optical devices including a first material embedded in a second material, wherein each optical device is associated with a different thickness range of a plurality of thickness ranges for the first material; a first capacitance measurement point including the first material embedded in the second material; and a second capacitance measurement point including a region from which the first material has been replaced with the second material.

Described herein are photonic integrated circuits (PICs) comprising a semiconductor optical amplifier (SOA) to output a signal comprising a plurality of wavelengths, a sensor to detect data associated with a power value of each wavelength of the output signal of the SOA, a filter to filter power values of one or more of the wavelengths of the output signal of the SOA, and control circuitry to control the filter to reduce a difference between a pre-determined power value of each filtered wavelength of the output signal of the SOA and the detected power value of each filtered wavelength of the output signal of the SOA.

An optical light package includes an optical output lens, an optical filter located thereunder and between the output lens and LEDS, a tray of LEDs arrayed on a stage mounted on a linear comb based MEMS device that is distributed in such a way that the stage is movable, and a driver that controls movement of the stage.

An optical multiplexer that extends a transmission bandwidth of light is achieved. The present invention provides an optical multiplexer constructed of a multimode waveguide to which two single mode input waveguides are connected at a distance and two single mode output waveguides connected at a distance to a surface opposite a surface to which the input waveguides of the multimode waveguide are connected, in which a width of the multimode waveguide is smaller than widths of the two input waveguides plus a distance between the input waveguides, and the input waveguides are connected to the multimode waveguide and the multimode waveguide is connected to the output waveguides via tapered waveguides, respectively.

Silicon photonic integrated circuit (PIC) on a multi-zone semiconductor on insulator (SOI) substrate having at least a first zone and a second zone. Various optical devices of the PIC may be located above certain substrate zones that are most suitable. A first length of a photonic waveguide structure comprises the crystalline silicon and is within the first zone, while a second length of the waveguide structure is within the second zone. Within a first zone, the crystalline silicon layer is spaced apart from an underlying substrate material by a first thickness of dielectric material. Within the second zone, the crystalline silicon layer is spaced apart from the underlying substrate material by a second thickness of the dielectric material.

A manufacturing method of an optical waveguide device that allows light to propagate through a core formed within a cladding formed on a substrate, the core having a higher refractive index than the cladding, includes: layering a first cladding-material layer for the cladding and a core-material layer for the core sequentially on the substrate; forming the layered core-material layer into the core having a waveguide shape, and removing a first part of the core, the first part being positioned at a portion where a slit is to be formed, to thereby form a gap in the core; layering a second cladding-material layer for the cladding to cover the first cladding-material layer and the core; and removing, by dry-etching, a second part of the first and second cladding-material layers, the second part being positioned at the portion where the slit is to be formed, to thereby form the slit.

An optical device and a spectral detection apparatus are provided. The optical device includes an optical waveguide, including: a polychromatic light channel configured to transport a polychromatic light beam, and provided with a light incident surface for receiving the incident polychromatic light beam at an input end of the polychromatic light channel; a chromatic dispersion device arranged downstream from the polychromatic light channel in an optical path and configured to separate the polychromatic light beam from the polychromatic light channel into a plurality of monochromatic light beams; and a plurality of monochromatic light channels arranged downstream from the chromatic dispersion device in the optical path and configured to respectively conduct the plurality of monochromatic light beams with different colors from the chromatic dispersion device. Monochromatic light output surfaces are respectively provided at output ends of the plurality of monochromatic light channels and configured to output the monochromatic light beams.

An apparatus for monitoring strain in an optical chip in silicon photonics platform. The apparatus includes a silicon photonics substrate shared with the optical chip. Additionally, the apparatus includes an optical input configured in the silicon photonics substrate to supply an input signal of a single wavelength. The apparatus further includes a first waveguide arm and a second waveguide arm embedded in the silicon photonics substrate to form an on-chip interferometer. The second waveguide arm forms a delay line being disposed at a region in or adjacent to the optical chip. The on-chip interferometer is configured to generate an interference pattern serving as an indicator of strain distributed at the region in or adjacent to the optical chip. The interference pattern is caused by a temperature-independent phase shift at the single wavelength of the interferometer between the first waveguide arm and the second waveguide arm.