A LIDAR system includes a light source configured to output a source signal. The LIDAR chip is also configured to output a LIDAR output signal that exits from the LIDAR chip. The LIDAR system also includes an isolator adapter that includes an optical isolator configured to receive an adapter signal. The adapter signal includes light that is from the source signal and that has exited from the LIDAR chip before being received by the optical isolator. The isolator is configured to output light from the adapter signal in an isolator output signal. Additionally, the LIDAR output signal includes light from the isolator output signal.

A planar lightwave circuit structure based on a printed circuit board and its manufacturing method are provided. The manufacturing method includes: S1, preparing the printed circuit board; S2, adhering the lower cladding layer to one side of the printed circuit board, and then annealing process carried out; S3, jetting a lightwave circuit material on an upper surface of the lower cladding layer in a predetermined route through an electrohydrodynamic jet printing device to form lightwave circuit lines to be cured, the lightwave circuit material being a slurry containing silver ions and an ultraviolet (UV) curing agent; S4, curing the lightwave circuit lines through irradiation of UV light, the UV light irradiating onto the lightwave circuit lines through a lens assembly with slits; and S5, depositing an upper cladding layer on the lower cladding layer and the lightwave circuit lines, and then solidifying treatment carried out.

A photonic structure can include in one aspect one or more waveguides formed by patterning of waveguiding material adapted to propagate light energy. Such waveguiding material may include one or more of silicon (single-, poly-, or non-crystalline) and silicon nitride.

A LIDAR system includes a light source configured to output a source signal. The LIDAR chip is also configured to output a LIDAR output signal that exits from the LIDAR chip. The LIDAR system also includes an isolator adapter that includes an optical isolator configured to receive an adapter signal. The adapter signal includes light that is from the source signal and that has exited from the LIDAR chip before being received by the optical isolator. The isolator is configured to output light from the adapter signal in an isolator output signal. Additionally, the LIDAR output signal includes light from the isolator output signal.

The disclosed embodiments relate to an integrated circuit structure and methods of forming them in which photonic devices are formed on the back end of fabricating a CMOS semiconductor structure containing electronic devices. Doped regions associated with the photonic devices are formed using microwave annealing for dopant activation.

The fabrication of a first waveguide made of stoichiometric silicon nitride, of a second waveguide made of crystalline semiconductor material and of at least one active component optically coupled to the first waveguide via the second waveguide. The method includes: a) the formation of an aperture which passes through an encapsulation layer of the first waveguide and emerges in or on a substrate made of monocrystalline silicon, then b) the deposition by epitaxial growth of a crystalline seeding material inside the aperture until this crystalline seeding material forms a crystalline seed on a top face of the encapsulation layer, then c) a lateral epitaxy, of a crystalline semiconductor material from the crystalline seed formed to form a layer made of crystalline semiconductor material wherein the second waveguide is then produced.

A method forms a vertical output coupler for a waveguide that propagates light along a horizontal propagation direction, through a waveguide material that overlies a buried oxide layer. The method includes etching the waveguide to remove a portion of the waveguide. The etching forms at least a first plane that is at an edge of the waveguide, is adjacent to the removed portion of the waveguide, and is tilted at a vertical angle between 20 degrees and 70 degrees with respect to the propagation direction. The method further includes coating the first tilted plane with a reflective metal to form a mirror, such that the mirror reflects the light into a direction having a vertical component.

A method for fabricating an integrated semiconductor photonics device is disclosed. The method may include providing a first substrate having on its top surface a monocrystalline semiconductor layer suitable for supporting an optical mode and forming a homogenous and conformal first dielectric layer on a planar surface of the monocrystalline semiconductor layer. The method may further include providing a dielectric waveguide core on the first dielectric layer, the dielectric waveguide core optically coupled to a first region of the monocrystalline semiconductor layer through the first dielectric layer. The method may further include depositing a second dielectric layer on the dielectric waveguide core, thereby covering the dielectric waveguide core, and annealing the substrate to drive hydrogen out of the dielectric waveguide core.

A method of co-manufacturing silicon waveguides, SiN waveguides, and semiconductor structures in a photonic integrated circuit. A silicon waveguide structure can be formed using a suitable process, after which it is buried in a cladding. The cladding is polished, and a silicon nitride layer is disposed to define a silicon nitride waveguide. The silicon nitride waveguide is buried in a cladding, and annealed. Thereafter, cladding above the silicon waveguide structure can be trenched through, and low-temperature operations can be performed to or with an exposed surface of the silicon waveguide structure.

The disclosure provides a method of forming an erasable optical coupler in a photonic device comprising a conventional optical waveguide formed in a crystalline wafer. The method comprises selectively implanting ions in a localized region of the wafer material adjacent to the conventional waveguide of the photonic device, to cause modification of the crystal lattice structure of, and a change in refractive index in, the ion implanted region of the wafer material to thereby form an ion implanted waveguide optically coupled to the adjacent conventional waveguide to couple light out therefrom, or in thereto. The crystalline wafer material and ion implanted waveguide are such that the crystal lattice structure or composition can be modified to adjust or remove the optical coupling with the conventional waveguide by further modification of the refractive index in the ion implanted region.