Provided are semiconductor particles including a Group 12-16 semiconductor including a Group 12 element and a Group 16 element, a Group 13-15 semiconductor including a Group 13 element and a Group 15 element, or a Group 14 semiconductor including a Group 14 element, the semiconductor particles having a plasma frequency of 1.7×10.sup.14 rad/s to 4.7×10.sup.14 rad/s and a maximum length of 1 nm to 2,000 nm; and a dispersion, a film, an optical filter, a building member, or a radiant cooling device, in all of which the semiconductor particles are used.

A mechanically tunable reflective metamirror optical device for a targeted design optical wavelength includes a dynamically deformable substrate and a sub-wavelength periodic arrangement of patterned isolated gap surface plasmon (GSP) resonators positioned in or on the dynamically deformable substrate. The patterned isolated GSP resonators are movable relative to each other and comprise a patterned optically thin metal layer for the design wavelength, a patterned optically thick metal layer for the design wavelength, and a patterned insulator layer between the patterned optically thin and optically thick metal layers.

The present application relates to semiconductor photodetectors, in particular to a silicon carbide-based UV-visible-NIR full-spectrum-responsive photodetector and a method for fabricating the same. The photodetector includes a silicon carbide substrate, and metal counter electrodes and a surface plasmon polariton nanostructure arranged thereon. The silicon carbide substrate and the metal counter electrodes constitute a metal-semiconductor-metal photodetector with coplanar electrodes. When the ultraviolet light is input, free carriers directly generated in silicon carbide are collected by an external circuit to generate electrical signals. When the visible light is input, hot carriers generated in the surface plasmon polariton nanostructure tunnel into the silicon carbide semiconductor to become free carriers to generate electrical signals.

As described above, one or more aspects of the present disclosure provide articles having structural color, and methods of making articles having structural color.

This invention relates to devices that can controllably vary the properties of graphene with respect to different wavelengths of electromagnetic radiation and particularly its optical properties. The electronically variable optical surfaces of the invention comprise graphene layers with intercalated metal (e.g. lithium) ions. The cell comprises an Li-NMC anode as ion source, an ionic liquid electrolyte, and an multilayer graphene cathode.

Disclosed are a micro-ring modulator and a method for manufacturing a micro-ring modulator. The micro-ring modulator includes at least one straight waveguide (10) and at least one surface plasmon polariton micro-ring resonator (20) coupled to the straight waveguide (10). The straight waveguide (10) is configured for transmitting an optical signal; and the surface plasmon polariton micro-ring resonator (20) is configured for modulating an intensity of an optical signal with a wavelength corresponding to the surface plasmon polariton micro-ring resonator (20).

A display is described which comprises a plurality of pixels (12), wherein each pixel (12) comprises a plasmonic resonator (26) including first and second metallic material elements (16, 22) and incorporating a layer (18) of a phase change material, the plasmonic resonator (26) being arranged such that in one material state of the phase change material (18) the electric field coupling between the second metallic material element (22) and the phase change material layer (18) is strong and so strong absorption of selected wavelengths of the incident light occurs, whereas in another state of the phase change material (18) the electric field coupling between the metallic material elements (16, 22) and the phase change material layer (18), and between the first and second metallic material elements (16, 22) is weak and so re-radiation of incident light occurs, the pixel (12) being of high reflectance.

One non-limiting and exemplary embodiment provides a metal microscopic structure capable of detecting a low-concentration analyte with high sensitivity. The metal microscopic structure includes a base member including multiple protrusions arrayed at predetermined intervals, and multiple projections made of a metal film covering the base member and configured to generate surface plasmons upon irradiation with light. A film thickness of the metal film positioned in a bottom portion of a gap between every adjacent two of the multiple projections is greater than a height of the multiple protrusions and is more than or equal to 90% and less than or equal to 100% of a film thickness of the metal film deposited on top portions of the multiple protrusions.

The present technology relates to an electromagnetic wave processing device that enables reduction of color mixture. Provided are a photoelectric conversion element formed in a silicon substrate, a narrow band filter stacked on a light incident surface side of the photoelectric conversion element and configured to transmit an electromagnetic wave having a desired wavelength, and interlayer films respectively formed above and below the narrow band filter, and the photoelectric conversion element is formed at a depth from an interface of the silicon substrate, the depth where a transmission wavelength of the narrow band filter is most absorbed. The depth of the photoelectric conversion element from the silicon substrate becomes deeper as the transmission wavelength of the narrow band filter is longer. The present technology can be applied to an imaging element or a sensor using a plasmon filter or a Fabry-Perot interferometer.

The present disclosure relates to a light-emitting device (100), comprising a dielectric layer (110) including a plurality of first quantum dots (112) embedded therein, wherein the plurality of first quantum dots (112) is configured to emit light of a first color; and a metamaterial structure (120) embedded in the dielectric layer (110), wherein the metamaterial structure (120) is configured to convert at least a portion of an energy released by the plurality of first quantum dots into surface plasmons.