A semiconductor device includes a detector structure. The detector structure includes an integrated circuit on a substrate, and a photo detector on an upper surface of the integrated circuit that is opposite the substrate, where the substrate is non-native to the photo detector. A System-on-Chip apparatus includes at least one laser emitter on a non-native substrate, at least one photo detector on the non-native substrate, and an input/output circuit. The at least one photo detector of the second plurality of photo detectors is disposed on an integrated circuit between the at least one photo detector and the non-native substrate to form a detector structure.

A laser array includes a plurality of laser diodes arranged and electrically connected to one another on a surface of a non-native substrate. Respective laser diodes of the plurality of laser diodes have different orientations relative to one another on the surface of the non-native substrate. The respective laser diodes are configured to provide coherent light emission in different directions, and the laser array is configured to emit an incoherent output beam comprising the coherent light emission from the respective laser diodes. The output beam may include incoherent light having a non-uniform intensity distribution over a field of view of the laser array. Related devices and fabrication methods are also discussed.

Provided is a wide angle application high reflective mirror having a reflection band partially overlapping in a wavelength range of 800-4000 nm. The mirror comprises a film system in which a plurality of high refractive index film layers and a plurality of low refractive index film layers that are alternately stacked, and the material of the high refractive index film layer is one of SiH, SiO.sub.xH.sub.y, or SiO.sub.xN.sub.y, or a mixture thereof. The highly reflective mirror can achieve a reflectance greater than 99% with an incident angle ranging from 0 to 60 degrees over a large angle range.

A method of dispersion compensation in an optical device is disclosed. The method may include identifying a first hologram grating vector of a grating medium of the optical device. The first hologram grating vector may correspond to a first wavelength of light. The method may include determining a probe hologram grating vector corresponding to a second wavelength of light different from the first wavelength of light. The method may also include determining a dispersion-compensated second hologram grating vector based at least in part on the probe hologram grating vector and the first hologram grating vector. A device for reflecting light is disclosed. The device may include a grating medium and a grating structure within the grating medium. The grating medium may include a dispersion compensated hologram.

An optical path switching method is applied to a surveillance module. The method includes: determining a target magnification; and (i) when the target magnification is less than or equal to a maximum magnification of a camera, setting a magnification of the camera to the target magnification, determining that a reflection element is at a first location or in a first working state, and performing image capture by using the camera alone; or (ii) when the target magnification is greater than a maximum magnification of the camera, setting a magnification of the camera to a first magnification, determining that the reflection element is at a second location or in a second working state, and performing image capture by using both the camera and a teleconverter, where a product of the first magnification and a magnification of the teleconverter is the target magnification. The method increases a surveillance distance while reducing costs.

A semiconductor device includes a detector structure. The detector structure includes an integrated circuit on a substrate, and a photo detector on an upper surface of the integrated circuit that is opposite the substrate, where the substrate is non-native to the photo detector. A System-on-Chip apparatus includes at least one laser emitter on a non-native substrate, at least one photo detector on the non-native substrate, and an input/output circuit. The at least one photo detector of the second plurality of photo detectors is disposed on an integrated circuit between the at least one photo detector and the non-native substrate to form a detector structure.

A laser array includes a plurality of laser emitters arranged in a plurality of rows and a plurality of columns on a substrate that is non-native to the plurality of laser emitters, and a plurality of driver transistors on the substrate adjacent one or more of the laser diodes. A subset of the plurality of laser emitters includes a string of laser emitters that are connected such that an anode of at least one laser emitter of the subset is connected to a cathode of an adjacent laser emitter of the subset. A driver transistor of the plurality of driver transistors is configured to control a current flowing through the string.

A laser diode includes a semiconductor structure of a lower Bragg reflector layer, an active region, and an upper Bragg reflector layer. The upper Bragg reflector layer includes a lasing aperture having an optical axis oriented perpendicular to a surface of the active region. The active region includes a first material, and the lower Bragg reflector layer includes a second material, where respective lattice structures of the first and second materials are independent of one another. Related laser arrays and methods of fabrication are also discussed.

A laser array includes a plurality of laser diodes arranged and electrically connected to one another on a surface of a non-native substrate. Respective laser diodes of the plurality of laser diodes have different orientations relative to one another on the surface of the non-native substrate. The respective laser diodes are configured to provide coherent light emission in different directions, and the laser array is configured to emit an incoherent output beam comprising the coherent light emission from the respective laser diodes. The output beam may include incoherent light having a non-uniform intensity distribution over a field of view of the laser array. Related devices and fabrication methods are also discussed.

A reflective optical element for the extreme ultraviolet (EUV) wavelength range having a multi-layer system extending over an area on a substrate. The system includes layers (54, 55′) made of at least two different materials with different real parts of the refractive index in the EUV arranged alternately. A layer of one of the two materials forms a stack with the layer or layers arranged between this layer and the nearest layer of the same material with increasing distance from the substrate. In at least one stack (53′), the material of the layer (55′) with the lower real part of the refractive index and/or the material of the layer (54) with the larger real part of the refractive index is a combination (551, 552) made of at least two substances.