A color filter array may include a plurality of color filters arranged two-dimensionally and configured to allow light of different wavelengths to pass therethrough. Each of the plurality of color filters includes at least one Mie resonance particle and a transparent dielectric surrounding the at least one Mie resonance particle.

An asymmetric adiabatic polarization beam splitter integrated with a waveband filtering splitter unit and a polarization filtering splitter unit is capable of being packaged to form an integrated optical waveguide filtering chip. The waveband filtering splitter unit utilizes an adiabatic optical waveguide structure and stimulated Raman adiabatic passage on an optical waveguide to split the energy of light sources of different bands to different spaces when the light energy is performed with an adiabatic process. The polarization filtering splitter unit utilizes the two orthogonal polarization modes of an optical waveguide with birefringence to achieve a polarization-dependent mode splitting effect based on an adiabatic theory. The asymmetric adiabatic polarization beam splitter realizes the characteristics of integration and high process tolerance, and improves the mass production feasibility.

In some implementations, an optical interference filter includes a substrate; and a set of layers that are disposed on the substrate. The set of layers includes a first subset of layers, wherein the first subset of layers comprises an aluminum nitride (AlN) material; and a second subset of layers, wherein the second subset of layers comprises a hydrogenated silicon (Si:H) material.

A display that includes an image producing system and a light filtering layer in the blue range, the light filtering layer having a limited impact on the gamut of the display. The image producing system has a gamut G.sub.0 defined in a color space The light filtering layer includes semi-conductive nanoparticles, and the absorbance through the light filtering layer is greater than 0.25 for each light wavelength ranging from 350 nm to λ.sub.cut, λ.sub.cut being in the range from 420 nm to 450 nm. The gamut G.sub.1 of the image producing system with the filtering layer has an area greater than 90% of the area of gamut G.sub.0 in the color space.

An interference filter comprises a substrate, a filter stack and at least one absorption layer. The filter stack comprises alternating layers of optical coatings with different refractive indices arranged on the substrate. The at least one absorption layer is comprised of an optically absorbing material which is arranged on the substrate.

An optical filter structure of an arbitrary combination of UV, R, G, B, and IR includes a substrate and a filter layer. The substrate is a wafer semiconductor sensor device and a product of light-transmitting device. The filter layer is formed on a surface of the substrate and is formed of a plurality of basic units arranged in an array. Each of the basic units includes a plurality of pixel filter films formed through vacuum coating, and the plurality of pixel filter films include an arbitrary combination of multiple ones of a UV pixel filter film, an R pixel filter film, a G pixel filter film, a B pixel filter film, and an IR pixel filter film, such that the plurality of pixel filter films allow light of corresponding wavelengths to pass therethrough.

A color filter array may include a plurality of color filters arranged two-dimensionally and configured to allow light of different wavelengths to pass therethrough. Each of the plurality of color filters includes at least one Mie resonance particle and a transparent dielectric surrounding the at least one Mie resonance particle.

An integrated semiconductor optoelectronic component for sensing ambient light levels includes a silicon photomultiplier configured to deliver an output signal indicative of the intensity of the light that irradiates the component. The silicon photomultiplier has an active surface area for light detection. The component also includes an optical filter covering the active surface area of the silicon photomultiplier. The optical filter is adapted to selectively transmit light onto the active surface area as a function of wavelength. The optical filter is a scotopic filter and has a spectral transmission curve that mimics the spectral response of the human eye under low-light conditions. The component further includes readout electronics for processing the output signal of the silicon photomultiplier.

A light pixel projection module includes a pixel light source, a light pixel projection assembly for projecting a light pixel generated by the light pixel generating assembly, and an optical time-of-flight (ToF) measurement assembly for measuring a distance between the projection module and an external object. The ToF measurement assembly includes a ToF light source, a beam splitting optical device for splitting an incident light beam into a reflected main beam component and a transmitted and attenuated secondary beam component, and an APD-based ToF photodetector for light detection. The beam splitting optical device is arranged in the optical path of light beams emitted by the ToF light source such that it splits each light beam emitted by the ToF light source into a main beam component leaving the module and heading towards the external object and a secondary beam component remaining within the module and hitting the ToF photodetector.

Apparatus for depositing germanium and carbon onto one or more substrates comprises a vacuum chamber, at least first and second magnetron sputtering devices and at least one movable mount for supporting the one or more substrates within the vacuum chamber. The first magnetron sputtering device is configured to sputter germanium towards the at least one mount from a first sputtering target comprising germanium, thereby defining a germanium sputtering zone within the vacuum chamber. The second magnetron sputtering device is configured to sputter carbon towards the at least one mount from a second sputtering target comprising carbon, thereby defining a carbon sputtering zone within the vacuum chamber. The at least one mount and the at least first and second magnetron sputtering devices are arranged such that, when each substrate is moved through the germanium sputtering zone on the at least one movable mount, germanium is deposited on the said substrate, and when each substrate is moved through the carbon sputtering zone on the at least one movable mount, carbon is deposited on the said substrate.