G02B5/207

Color filter and image display device

Disclosed are a color filter including a wavelength conversion layer which converts the wavelength of light, a light transmission layer formed on the wavelength conversion layer, and a wavelength filter layer formed on the light transmission layer, and an image display device. The light transmission layer transmits a light moving between the wavelength conversion layer and the wavelength filter layer and blocks the flow of outgas. The color filter includes the light transmission layer which transmits a light moving between the wavelength conversion layer and the wavelength filter layer and blocks the flow of outgas, thereby capable of achieving high color reproductivity while having excellent light-emitting efficiency and light retention rate.

Semiconductor particles, dispersion, film, optical filter, building member, and radiant cooling device
11579347 · 2023-02-14 · ·

Provided are semiconductor particles including a Group 12-16 semiconductor including a Group 12 element and a Group 16 element, a Group 13-15 semiconductor including a Group 13 element and a Group 15 element, or a Group 14 semiconductor including a Group 14 element, the semiconductor particles having a plasma frequency of 1.7×10.sup.14 rad/s to 4.7×10.sup.14 rad/s and a maximum length of 1 nm to 2,000 nm; and a dispersion, a film, an optical filter, a building member, or a radiant cooling device, in all of which the semiconductor particles are used.

SEMICONDUCTOR NANOPARTICLE AGGREGATE, SEMICONDUCTOR NANOPARTICLE AGGREGATE DISPERSION LIQUID, SEMICONDUCTOR NANOPARTICLE AGGREGATE COMPOSITION, AND SEMICONDUCTOR NANOPARTICLE AGGREGATE CURED FILM

A semiconductor nanoparticle aggregate that is an aggregate of core/shell type semiconductor nanoparticles including a core including In and P and a shell having one or more layers, in which a peak wavelength of an emission spectrum of the semiconductor nanoparticle aggregate is from 515 nm to 535 nm and a full width at half maximum of the emission spectrum is 43 nm or less. For each semiconductor nanoparticle, (1) an average value of a full width at half maximum of an emission spectrum is 15 nm or more, (2) a standard deviation of a peak wavelength of the emission spectrum is 12 nm or less, and (3) a standard deviation of the full width at half maximum of the emission spectrum is 2 nm or more.

PROCESSING LIQUID PROVIDING APPARATUS AND SUBSTRATE TREATING SYSTEM INCLUDING THE SAME

Provided are an apparatus for providing a substrate processing liquid having an optimal structure in the correlation between securing internal agitation fluidity and recovery of sloshing, and a substrate processing system including the same. The apparatus for providing substrate processing liquid comprises a storage tank for storing substrate processing liquid, and a partition wall installed inside the storage tank and for dividing an internal space of the storage tank, wherein the apparatus is connected to a substrate processing apparatus for discharging the substrate processing liquid onto a substrate to provide the substrate processing liquid to the substrate processing apparatus, wherein the partition wall includes a plurality of holes formed passing through one surface and the other surface.

Optical filter, spectrometer including the optical filter, and electronic apparatus including the optical filter
11692875 · 2023-07-04 · ·

An optical filter, a spectrometer including the optical filter, and an electronic apparatus including the optical filter are disclosed. The optical filter includes a first reflector including a plurality of first structures that are periodically two-dimensionally arranged, each of the first structures having a ring shape, and a second reflector spaced apart from the first reflector and including a plurality of second structures that are periodically two-dimensionally arranged.

QUANTUM DOT COLOR FILTER SUBSTRATE, METHOD FOR MANUFACTURING SAME, AND DISPLAY DEVICE
20220404533 · 2022-12-22 ·

A quantum dot color filter substrate, a method for manufacturing the same, and a display device are provided. In the method for manufacturing the quantum dot color filter substrate, a plurality of red (R) color resist blocks, green (G) color resist blocks, and blue (B) color resist blocks each having a structure with a wide top surface and a narrow bottom surface are first formed, and then a quantum dot layer is formed on a silicon substrate, and then the quantum dot layer is contacted with the color resist layer, and then the silicon substrate is peeled off to transfer at least parts of the quantum dot layer in contact with the R color resist blocks and the G color resist blocks to surfaces of the R color resist blocks and the G color resist blocks.

All inorganic perovskite materials for short wave IR devices

All inorganic perovskites for short-wave IR (SWIR) devices having improved chemical stability and long-term stability. Improved methods of making all inorganic perovskites for short-wave IR (SWIR) devices are also disclosed herein.

METHOD OF PREPARING QUANTUM DOTS, QUANTUM DOT PREPARED BY THE METHOD OF PREPARING QUANTUM DOT, OPTICAL MEMBER INCLUDING THE QUANTUM DOT, AND ELECTRONIC APPARATUS INCLUDING THE QUANTUM DOT
20220384752 · 2022-12-01 ·

Provided are a method of preparing quantum dots, a quantum dot prepared by the method, an optical member including the quantum dot, and an electronic apparatus including the quantum dot. The method includes: preparing a mixture of a semiconductor compound including indium (In), a first precursor including a first metal element, a second precursor including a second metal element, a third precursor including a third element, and a fourth precursor including a fourth element; and heating the mixture, wherein the first precursor and the second precursor are different from each other, and the third precursor and the fourth precursor are different from each other.

MULTILAYER FILM AND IMAGING ELEMENT

A multilayer film according to an embodiment of the present disclosure includes: semiconductor layers; and dielectric layers. In each of the semiconductor layers, a value of an optical constant k1 for light having a wavelength in a visible light region among optical constants k is larger than a value of an optical constant k2 for light having a wavelength in an infrared light region. The optical constants k each serves as an extinction coefficient that includes an imaginary part of a complex refractive index. The semiconductor layers and the dielectric layers are alternately stacked and the multilayer film has an optical distance of 0.3 μm or more and 10 μm or less in a stack direction and absorbs at least a portion of visible light and transmits infrared light.

DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME

A display device and a manufacturing method thereof are provided. The display device includes a first substrate; a first color filter, a second color filter, and a third color filter that are on the first substrate; a plurality of roof layers that cover spaces that overlap the first color filter, the second color filter, and the third color filter, respectively; a first color conversion layer that is positioned in a space overlapping the first color filter; a second color conversion layer that is positioned in a space overlapping the second color filter; a transmissive layer that is positioned in a space overlapping the third color filter; and a capping layer that is positioned on the plurality of roof layers.